Abstract: An antenna structure includes a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a fifth radiation element, and a nonconductive support element. The first radiation element has a feeding point. The second radiation element is coupled to the feeding point. The third radiation element has a grounding point. The fourth radiation element is coupled to the third radiation element. The fourth radiation element is adjacent to the first radiation element and the second radiation element. The fifth radiation element is coupled to the third radiation element and the fourth radiation element. The first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element are disposed on the nonconductive support element.

Abstract: In certain aspects, the invention provides crystalline forms of ivacaftor N-(2,4-di-tert-butyl-phenyl-5-hydroxy-phenyl)-1,4-dihydro-4-oxoquinoline-3-carboxamide. In related aspects, the invention provides a process for preparing any one of crystalline forms S2, S3, S4 and S5 of ivacaftor. The process includes: forming a solution including crude ivacaftor and a solvent; adding an anti-solvent to the solution to form slurry including a precipitate; isolating the precipitate; and drying the precipitate to provide crystalline form S2, S3, S4, or S5 of ivacaftor.

Abstract: A method of packaging a semiconductor die includes connecting an interposer frame directly to a substrate, wherein the interposer frame has a plurality of conductive columns. The method further includes attaching the semiconductor die to the substrate in an opening of the interposer frame, wherein the semiconductor die directly contacts the substrate. The method further includes forming a molding compound to fill space between the semiconductor die and the interposer frame. The method further includes removing a portion of the molding compound to expose the plurality of conductive columns. The method further includes forming a redistribution layer directly contacting a top surface of the semiconductor die and a top surface of the interposer frame.

Abstract: The present invention provides a voltage control method for controlling a power supply. The voltage control method comprises the following steps: obtaining a present output voltage value associated with a present gain value; obtaining a predetermined output voltage value associated with a predetermined duty ratio; calculating a target gain value, corresponding to the predetermined duty ratio, according to a gain value formula; performing a weight calculation on the present gain value and the target gain value for generating a buffer gain value; and setting an output voltage command according to the buffer gain value. Wherein the buffer gain value is between the present gain value and the target gain value.

Abstract: Provided herein are improved processes and methods for preparing osimertinib or a salt thereof, in particular osimertinib mesylate. The improved process removes the necessity of isolating the unstable aniline intermediate of formula (III) and enables the direct coupling to form the amide product of formula (II): The present invention is suitable for a large-scale production, avoiding the isolation of unstable intermediate, thereby providing osimertinib or a mesylate salt thereof in both high yields and high purity.

Abstract: An antenna structure includes a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a fifth radiation element, and a nonconductive support element. The first radiation element has a feeding point. The second radiation element is coupled to the feeding point. The third radiation element has a grounding point. The fourth radiation element is coupled to the third radiation element. The fourth radiation element is adjacent to the first radiation element and the second radiation element. The fifth radiation element is coupled to the third radiation element and the fourth radiation element. The first radiation element, the second radiation element, the third radiation element, the fourth radiation element, and the fifth radiation element are disposed on the nonconductive support element.

Abstract: In certain aspects, the invention provides crystalline forms of ivacaftor N-(2,4-di-tert-butyl-phenyl-5-hydroxy-phenyl)-1,4-dihydro-4-oxoquinoline-3-carboxamide. In related aspects, the invention provides a process for preparing any one of crystalline forms S2, S3, S4 and S5 of ivacaftor. The process includes: forming a solution including crude ivacaftor and a solvent; adding an anti-solvent to the solution to form slurry including a precipitate; isolating the precipitate; and drying the precipitate to provide crystalline form S2, S3, S4, or S5 of ivacaftor.

Abstract: An electronic device and a method for screening a sample are provided. The method includes the following steps. N samples corresponding to a first object are received, in which the N samples include a first sample. N similarity vectors respectively corresponding to the N samples are calculated, in which the N similarity vectors include a first similarity vector corresponding to the first sample. The first similarity vector includes multiple first similarities between the first sample and each of the N samples except the first sample. The first sample is determined to be a representative sample of the first object in response to an average value of the first similarities of the first similarity vector being the maximum value among average values of N similarities respectively corresponding to the N similarity vectors.

Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

Abstract: A powder-based three-dimensional printing (3DP) method, device and system, and a computer-readable storage medium. The method includes: analyzing printing images of layers corresponding to a part to be printed to determine a target print image and adding a preset mark to the target print image which includes a print image of a target layer that causes a previous powder layer of the target layer to displace during printing; acquiring an image to be printed of a current layer to be printed; identifying the image to be printed to determine whether the preset mark exists on the image to be printed; and if yes, processing the current layer to be printed and/or a previous powder layer of the current layer to be printed such that the previous powder layer of the current layer does not move with powder spreading of the current layer.

Abstract: An optical forwarding device includes a specific optical connector and an optical forwarding module. The optical forwarding module includes first and second optical connectors, first and second wavelength division multiplexers (WDM), and an optical circulator. The first WDM receives and forwards a first optical signal from the first optical connector. The optical circulator includes first, second, and third ports. The first port forwards the first optical signal from the first WDM. The second port forwards the first optical signal from the first port to the optical cable through the specific optical connector, and receives and forwards a second optical signal from the optical cable. The first and second optical signals have a first wavelength. The third port receives and forwards the second optical signal from the second port. The second WDM receives the second optical signal from the third port and sends the same to the second optical connector.

Abstract: An antenna system includes a dielectric substrate, a ground plane, and a first antenna array. The ground plane is disposed on a second surface of the dielectric substrate. The first antenna array is disposed on a first surface of the dielectric substrate. The first antenna array includes a first transmission line, a first antenna element, a second antenna element, a third antenna element, a fourth antenna element, a fifth antenna element, and a sixth antenna element. The first transmission line has a first feeding point and is coupled to the first antenna element, the second antenna element, the third antenna element, the fourth antenna element, the fifth antenna element, and the sixth antenna element. The first antenna element, the second antenna element, the third antenna element, the fourth antenna element, the fifth antenna element, and the sixth antenna element are all substantially arranged in a first straight line.

Abstract: The present disclosure relates generally to compounds and compositions, intermediates, processes for their preparation, and their use as kinase inhibitors.

Abstract: A method for manufacturing an air curtain device includes steps of: a) providing a frame that includes two side wall bodies and two end wall bodies cooperatively defining an inner space thereamong, and an upper opening and a lower opening through which the inner space communicates with the external environment; b) covering an upper surface and a lateral outer surface of the frame with a first covering layer; c) closing the lower opening by placing an air-permeable plate; d) sealing a gap between the air-permeable plate and the frame by a first adhesive; e) removing a portion of the first covering layer that covers the upper surface of the frame; and f) closing the upper opening by a cover that is sealingly connected to the frame.

Abstract: The present disclosure relates generally to methods and compositions for preventing or arresting cell death and/or inflammation.

Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

Abstract: The present disclosure relates generally to compounds and compositions, intermediates, processes for their preparation, and their use as kinase inhibitors.

Abstract: One or more aspects of the present disclosure are directed to aqueous solutions that can be used to make substrates such as an article that can inhibit or limit one or more sources of odor. In an aspect, the aqueous solution can include one or more components, where one of the components is an inhibiting agent that can function to inhibit or limit the sources of odor in an article such as a textile.

Abstract: The present disclosure relates generally to methods and compositions for preventing or arresting cell death and/or inflammation.

Abstract: The present disclosure relates generally to methods and compositions for preventing or arresting cell death and/or inflammation.