Abstract: A back cover with an antenna element includes a cover body having a main portion, and an antenna element. A periphery of the main portion protrudes frontward to form a peripheral wall. The cover body is further equipped with a magnetic part. The antenna element is assembled in the cover body. The antenna element has a base portion, a connecting portion, a first extension portion and a second extension portion extended upward from the base portion. The first extension portion is disposed adjacent to one side of the peripheral wall of the cover body. The second extension portion is adjacent to the first extension portion. A length of the first extension portion is longer than a length of the second extension portion. A connecting portion is connected between the first extension portion and a top end of the second extension portion.

Abstract: A packaging structure and a circuit board having the packaging structure are provided. The packaging structure includes a power chip, a wire, a grid terminal, a first soldering layer, a second soldering layer, a first frame, a second frame, and a packaging body. The power chip has a grid electrode, a source electrode, and a drain electrode. The grid terminal is connected to the grid electrode through the wire. The first frame is connected to the source electrode through the first soldering layer. The second frame is connected to the drain electrode through the second soldering layer. The packaging body covers the power chip, the grid terminal, the first frame, the second frame, the wire, the first soldering layer and the second soldering layer.

Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

Abstract: A thermal ground plane (TGP) is disclosed. A TGP may include a first planar substrate member comprising copper and a second planar substrate member comprising a metal, wherein the first planar substrate member and the second planar substrate member enclose a working fluid. The TGP may include a first plurality of pillars disposed on an interior surface of the first planar substrate and a mesh layer disposed on the top of the first plurality of pillars, wherein the mesh layer comprises at least one of copper, polymer encapsulated with copper, or stainless steel encapsulated with copper. The TGP may also include a second plurality of pillars disposed on an interior surface of the second planar substrate member within an area defined by the perimeter of the second planar substrate member and the second plurality of pillars extend from the second planar substrate member to the mesh layer.

Abstract: A locking mechanism comprises a main body, an ejector rod, a guide rod assembly, a carrier plate and a fixing assembly. The carrier plate comprises a center hole and a plurality of annular strip holes. The fixing assembly comprises a rotary disc. The center hole and the annular strip holes can lock the rotary disc in different rotation angles. The guide rod assembly limits the rotation tolerance of the carrier plate, and makes the carrier plate move up and down in the vertical direction. The rotary disc with limited rotational freedom is fixedly connected with the ejector rod, so that the locking mechanism can not only realize the linear lifting motion of the ejector rod, but also reduce the rotation angle error between the carrier plate and the ejector rod. A rotating lifting platform is also provided.

Abstract: A method of forming a semiconductor device includes forming photodiodes extending from a front-side surface of a semiconductor layer into the semiconductor layer; forming transistors on the front-side surface of the semiconductor layer; forming an interconnect structure over the transistors, the interconnect structure comprising an inter-metal dielectric and metal lines in the inter-metal dielectric; etching first regions of a backside surface of the semiconductor layer to form trenches in the semiconductor layer and non-overlapping the photodiodes; after forming the trenches, etching second regions of the backside surface of the semiconductor layer to form pits in the semiconductor layer and overlapping the photodiodes; and depositing a dielectric material in the trenches and the pits.

Abstract: A cable with a non-circular ground wire is provided, including two wires, two ground wires, and an insulating tape; wherein the inner sides of the wires are in contact with each other; the ground wires are respectively arranged on two opposite sides of the wires; each ground wire at least includes a first side surface, a second side surface, and a third side surface; the first and second side surfaces respectively contact the outer surfaces of the two wires, and the shapes of the first side surface and the second side surface respectively correspond to the shapes of the outer surfaces of the two wires; the insulating tape covers the outer surfaces of the wires and the third sides of the ground wires. Thereby, the mechanical properties of the cable of the present invention, such as small impedance variation of high-frequency signal transmission, transmission stability, structural flexibility and bending, can be significantly improved.

Abstract: Exemplary embodiments for redistribution layers of integrated circuits are disclosed. The redistribution layers of integrated circuits of the present disclosure include one or more arrays of conductive contacts that are configured and arranged to allow a bonding wave to displace air between the redistribution layers during bonding. This configuration and arrangement of the one or more arrays minimize discontinuities, such as pockets of air to provide an example, between the redistribution layers during the bonding.

Abstract: A semiconductor device includes a first wafer and a second wafer. The semiconductor device includes a seal ring structure comprising a first metal structure in a body of the first wafer, a second metal structure in the body of the first wafer, a third metal structure in a body of the second wafer, and a metal bonding structure including a first set of metal elements coupling the first metal structure and the third metal structure through an interface between the first wafer and the second wafer, and a second set of metal elements coupling the second metal structure and the third metal structure through the interface between the first wafer and the second wafer.

Abstract: A rotary device with automatic reset function for precise stopping and holding of a viewable rotating element without free play or slop remaining includes a conversion assembly, and a power assembly with output element and sensing assembly. The conversion assembly comprises a light-shielding structure with the light-shielding structure on the extension part. The power assembly with output element can drive the extension part to rotate synchronously with the light-shielding structure. The detachable sensing assembly overlaps the rotation path of the light-shielding structure, and the conversion assembly rotates at different angles so that the light-shielding structure and the sensing assembly will match at certain angles, so as to trigger a sensing signal and call up the output element. A display screen includes the rotary device with automatic reset function and a display assembly.

Abstract: A rotating assembly for a displaying device allowing vertical and horizontal presentation as a user requires. A displaying assembly, a transmitting assembly, and a driving assembly are included in the displaying device. The displaying assembly includes a displaying panel and a first clamping structure, the first clamping structure includes fixing structures with tenon structures in between. The transmitting assembly includes a second clamping structure and a connecting structure, the clamping structure comprises a clamping joint, the clamping joint is coupled to the tenon structure, and fixing grooves are defined on the second clamping structure. The fixing grooves are matched with the fixing structures, an end of the connecting structure is fixedly connected to the second clamping structure. The driving assembly includes a rotating driving member, an output shaft of the driving member is connected to the connecting structure.

Abstract: A semiconductor device includes a plurality of isolation structures, wherein each isolation structure of the plurality of isolation structures is spaced from an adjacent isolation structure of the plurality of isolation structures in a first direction. The semiconductor device further includes a gate structure. The gate structure includes a top surface; a first sidewall angled at a non-perpendicular angle with respect to the top surface; and a second sidewall angled with respect to the top surface. The gate structure further includes a first horizontal surface extending between the first sidewall and the second sidewall, wherein the first horizontal surface is parallel to the top surface, and a dimension of the gate structure in a second direction, perpendicular to the first direction, is less than a dimension of each of the plurality of isolation structures in the second direction.

Abstract: The present invention provides a method for manufacturing filling bag product of tremella mixed raw materials. Firstly, tremella raw material is put into a container of a drying system. Next, the tremella raw material is baked in the container of the drying system to dry the tremella. Then, the dried tremella raw material is placed into a grinder to grind it into tremella powder. Subsequently, the tremella powder is added with formula raw materials to evenly mix in a mixer to form tremella mixed liquid. Then, a filling machine is used to fill the tremella mixed liquid into a small package to form a tremella filling bag product.

Abstract: A rotating device which releases in the event of overload caused by external forceful counter-rotation includes positioning assemblies, a connecting assembly, and a driving assembly. Each positioning assembly includes a positioning member and sleeving member, part of the positioning member is positioned in the sleeving member and the positioning member abuts a first abutting portion in the sleeving member. The connecting assembly has a first end carrying mounting grooves, the mounting grooves themselves carrying the positioning assemblies. The driving assembly is connected to the first end, and when an external force of a certain magnitude is received by the positioning member, the positioning member moves into the sleeving member, and the driving assembly is thereby separated from and the positioning member, preventing the driving assembly from being damaged. A rotatable display apparatus with the rotating device is also disclosed.

Abstract: An energy absorbing structure comprises a first connecting member, a second connecting member, a brittle connecting member and an elastic buffering element. The first connecting member comprises a first end portion, and the first end portion defines a first accommodating cavity. The second connecting member comprise a second end portion, the second end portion defines a second accommodating cavity, and the first accommodating cavity communicates with the second accommodating cavity to form a telescopic cavity. The first connecting member and the second connecting member are connected by the brittle connecting member, the brittle connecting member is configured for breaking during a collision to absorb the energy generated by the collision. The elastic buffering element is arranged in the telescopic cavity, and the elastic buffering element is configured to be compressed by the first connecting member and the second connecting element together to deform and absorb energy during a collision.

Abstract: Memory devices are disclosed that support multiple power ramping sequences or modes. For example, a level shifter device is operably connected to a memory macro in a memory device. The level shifter device receives at least one gating signal. Based on a state of the at least one gating signal, the level shifter device outputs one or more signals that cause or control voltage signals in or received by the memory macro to ramp up, ramp down, or ramp up and ramp down according to one or more power ramping modes.

Abstract: A substrate includes a first dielectric layer having a first surface and a second dielectric layer having a first surface disposed adjacent to the first surface of the first dielectric layer. The substrate further includes a first conductive via disposed in the first dielectric layer and having a first end adjacent to the first surface of the first dielectric layer and a second end opposite the first end. The substrate further includes a second conductive via disposed in the second dielectric layer and having a first end adjacent to the first surface of the second dielectric layer. A width of the first end of the first conductive via is smaller than a width of the second end of the first conductive via, and a width of the first end of the second conductive via is smaller than the width of the first end of the first conductive via.

Abstract: The present invention provides an optical sensor package assembly. The light shield is arranged in the groove of a package housing above the photosensitive chip. The connection wires between the substrate, the light emitting unit and the photosensitive chip can be printed or disposed on the surface of the substrate. Further, a distance between the photosensitive element and the chip edge is designed to reduce or avoid side leakage interference.

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

Abstract: An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.