Abstract: A semiconductor device includes a first wafer and a second wafer. The semiconductor device includes a seal ring structure comprising a first metal structure in a body of the first wafer, a second metal structure in the body of the first wafer, a third metal structure in a body of the second wafer, and a metal bonding structure including a first set of metal elements coupling the first metal structure and the third metal structure through an interface between the first wafer and the second wafer, and a second set of metal elements coupling the second metal structure and the third metal structure through the interface between the first wafer and the second wafer.

Abstract: A rotary device with automatic reset function for precise stopping and holding of a viewable rotating element without free play or slop remaining includes a conversion assembly, and a power assembly with output element and sensing assembly. The conversion assembly comprises a light-shielding structure with the light-shielding structure on the extension part. The power assembly with output element can drive the extension part to rotate synchronously with the light-shielding structure. The detachable sensing assembly overlaps the rotation path of the light-shielding structure, and the conversion assembly rotates at different angles so that the light-shielding structure and the sensing assembly will match at certain angles, so as to trigger a sensing signal and call up the output element. A display screen includes the rotary device with automatic reset function and a display assembly.

Abstract: A rotating assembly for a displaying device allowing vertical and horizontal presentation as a user requires. A displaying assembly, a transmitting assembly, and a driving assembly are included in the displaying device. The displaying assembly includes a displaying panel and a first clamping structure, the first clamping structure includes fixing structures with tenon structures in between. The transmitting assembly includes a second clamping structure and a connecting structure, the clamping structure comprises a clamping joint, the clamping joint is coupled to the tenon structure, and fixing grooves are defined on the second clamping structure. The fixing grooves are matched with the fixing structures, an end of the connecting structure is fixedly connected to the second clamping structure. The driving assembly includes a rotating driving member, an output shaft of the driving member is connected to the connecting structure.

Abstract: A semiconductor device includes a plurality of isolation structures, wherein each isolation structure of the plurality of isolation structures is spaced from an adjacent isolation structure of the plurality of isolation structures in a first direction. The semiconductor device further includes a gate structure. The gate structure includes a top surface; a first sidewall angled at a non-perpendicular angle with respect to the top surface; and a second sidewall angled with respect to the top surface. The gate structure further includes a first horizontal surface extending between the first sidewall and the second sidewall, wherein the first horizontal surface is parallel to the top surface, and a dimension of the gate structure in a second direction, perpendicular to the first direction, is less than a dimension of each of the plurality of isolation structures in the second direction.

Abstract: The present invention provides a method for manufacturing filling bag product of tremella mixed raw materials. Firstly, tremella raw material is put into a container of a drying system. Next, the tremella raw material is baked in the container of the drying system to dry the tremella. Then, the dried tremella raw material is placed into a grinder to grind it into tremella powder. Subsequently, the tremella powder is added with formula raw materials to evenly mix in a mixer to form tremella mixed liquid. Then, a filling machine is used to fill the tremella mixed liquid into a small package to form a tremella filling bag product.

Abstract: A rotating device which releases in the event of overload caused by external forceful counter-rotation includes positioning assemblies, a connecting assembly, and a driving assembly. Each positioning assembly includes a positioning member and sleeving member, part of the positioning member is positioned in the sleeving member and the positioning member abuts a first abutting portion in the sleeving member. The connecting assembly has a first end carrying mounting grooves, the mounting grooves themselves carrying the positioning assemblies. The driving assembly is connected to the first end, and when an external force of a certain magnitude is received by the positioning member, the positioning member moves into the sleeving member, and the driving assembly is thereby separated from and the positioning member, preventing the driving assembly from being damaged. A rotatable display apparatus with the rotating device is also disclosed.

Abstract: An energy absorbing structure comprises a first connecting member, a second connecting member, a brittle connecting member and an elastic buffering element. The first connecting member comprises a first end portion, and the first end portion defines a first accommodating cavity. The second connecting member comprise a second end portion, the second end portion defines a second accommodating cavity, and the first accommodating cavity communicates with the second accommodating cavity to form a telescopic cavity. The first connecting member and the second connecting member are connected by the brittle connecting member, the brittle connecting member is configured for breaking during a collision to absorb the energy generated by the collision. The elastic buffering element is arranged in the telescopic cavity, and the elastic buffering element is configured to be compressed by the first connecting member and the second connecting element together to deform and absorb energy during a collision.

Abstract: Memory devices are disclosed that support multiple power ramping sequences or modes. For example, a level shifter device is operably connected to a memory macro in a memory device. The level shifter device receives at least one gating signal. Based on a state of the at least one gating signal, the level shifter device outputs one or more signals that cause or control voltage signals in or received by the memory macro to ramp up, ramp down, or ramp up and ramp down according to one or more power ramping modes.

Abstract: A substrate includes a first dielectric layer having a first surface and a second dielectric layer having a first surface disposed adjacent to the first surface of the first dielectric layer. The substrate further includes a first conductive via disposed in the first dielectric layer and having a first end adjacent to the first surface of the first dielectric layer and a second end opposite the first end. The substrate further includes a second conductive via disposed in the second dielectric layer and having a first end adjacent to the first surface of the second dielectric layer. A width of the first end of the first conductive via is smaller than a width of the second end of the first conductive via, and a width of the first end of the second conductive via is smaller than the width of the first end of the first conductive via.

Abstract: The present invention provides an optical sensor package assembly. The light shield is arranged in the groove of a package housing above the photosensitive chip. The connection wires between the substrate, the light emitting unit and the photosensitive chip can be printed or disposed on the surface of the substrate. Further, a distance between the photosensitive element and the chip edge is designed to reduce or avoid side leakage interference.

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

Abstract: An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.

Abstract: A method of making an image sensor includes depositing a shield layer over a substrate, wherein the substrate comprises a first photodiode (PD) and a second PD. The method further includes etching the shield layer to define a first recess aligned with the first PD and a second recess aligned with the second PD. The method further includes depositing a flicker reduction layer in the first recess and in the second recess. The method further includes etching the flicker reduction layer to remove the flicker reduction layer from the first recess.

Abstract: A semiconductor device package includes a carrier, an electronic component, a connection element and an encapsulant. The electronic component is disposed on a surface of the carrier. The connection element is disposed on the surface and adjacent to an edge of the carrier. The encapsulant is disposed on the surface of the carrier. A portion of the connection element is exposed from an upper surface and an edge of the encapsulant.

Abstract: Some embodiments include a thermal ground plane comprising a first and second casing with folding and non-folding regions. The thermal ground plane may also include a vapor structure and a mesh. The mesh may be disposed on an interior surface of the second casing and the mesh include a plurality of arteries extending substantially parallel with a length of the thermal ground plane. The folding region of the first casing may have an out-of-plane wavy structure. The valleys and peaks of the out-of-plane wavy structure, for example, may extend across a width of the first active region substantially parallel with a width of the thermal ground plane.

Abstract: High reliability leadfree solder alloys for harsh service conditions are disclosed. In some embodiments, a solder alloy comprises 2.5-4.0 wt % Ag; 0.4-0.8 wt % Cu; 5.0-9.0 wt % Sb; 1.5-3.5 wt % Bi; 0.05-0.35 wt % Ni; and a remainder of Sn. In some embodiments, an apparatus comprises: a component comprising: a main ceramic body, and a side surface having disposed thereon an electrode and a thermal pad; a copper substrate; and a solder alloy electrically coupling the component and the copper substrate, wherein the solder alloy comprises: 2.5-4.0 wt % Ag; 0.4-0.8 wt % Cu; 5.0-9.0 wt % Sb; 1.5-3.5 wt % Bi; 0.05-0.35 wt % Ni; and a remainder of Sn. In some embodiments, an apparatus comprises: a light-emitting diode (LED) component; a Metal Core Printed Circuit Board (MCPCB); and a solder alloy electrically coupling the LED component and the MCPCB, wherein the solder alloy comprises: 2.5-4.0 wt % Ag; 0.4-0.8 wt % Cu; 5.0-9.0 wt % Sb; 1.5-3.5 wt % Bi; 0.05-0.35 wt % Ni; and a remainder of Sn.

Abstract: A semiconductor device includes a first wafer and a second wafer. The semiconductor device includes a seal ring structure comprising a first metal structure in a body of the first wafer, a second metal structure in the body of the first wafer, a third metal structure in a body of the second wafer, and a metal bonding structure including a first set of metal elements coupling the first metal structure and the third metal structure through an interface between the first wafer and the second wafer, and a second set of metal elements coupling the second metal structure and the third metal structure through the interface between the first wafer and the second wafer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.

Abstract: A projection apparatus and a projection method are provided. The projection apparatus includes a projection device, a capturing image device, and a processing device. The capturing image device is configured to obtain an environmental image. The processing device is coupled to the projection device and the capturing image device. The processing device is configured to analyze the environmental image to provide at least one effective projection region. The processing device selects one of the at least one effective projection regions as a target projection region. The projection device is configured to project a projection image to the target projection region.

Abstract: A living body specimen transport device for receiving multiple living body specimens has a frame, a rotating bracket, and a storage assembly. The rotating bracket can be rotated with respect to the frame. The storage assembly can receive a container with a living body specimen and be rotated with respect to the rotating bracket. A center of gravity of the storage assembly is lower than a pivoting point where the rotating bracket is mounted on the frame and a pivoting point where the storage assembly is mounted on the rotating bracket. With such structure, even when the living body specimen transport device is vibrated and shaken during transporting and then the frame of the living body specimen transport device is tilted or turned over, the rotating bracket and the storage assembly can rotate to be vertical by themselves, which keeps the living body specimen being soaked in the preservation solution.