Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A die sorter tool may include a first conveyor, and a first lane to receive, from one or more load ports and via the first conveyor, a carrier with a set of dies. The die sorter tool may include a die flip module to receive the carrier from the first lane, manipulate one or more dies of the set of dies by changing orientations of the one or more dies, and return the one or more dies to the carrier after manipulating the one or more dies and without changing positions of the one or more dies within the carrier. The die sorter tool may include a second conveyor, and a second lane to receive, via the second conveyor, the carrier from the die flip module, and provide, via the first conveyor, the carrier to the one or more load ports.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

Abstract: A touchpad device is to be operated by using a stylus pen, and includes a touchpad and a controller that are connected to each other. The controller is connected to an electronic device that includes a display panel, and operates in a stylus-pen mode where a handwriting area is presented on the display panel. When it is determined that a distance between the stylus pen and the touchpad is less than a preset pen-hover distance but is non-zero, the controller operates in a hover-move sub-mode where the controller outputs a control signal to enable the electronic device to present, in the handwriting area, the cursor moving, without presenting a trace of the cursor.

Abstract: An evaluation method of locations, an analysis method of driving behavior, and a driver management system are provided. In the method, sensing data is obtained. A parking state is determined according to the sensing data. A parking location category corresponding to the sensing data under the parking state is obtained. A location suggestion model is trained according to the parking location category and the sensing data. The location suggestion model is used for suggesting a parking location. The location suggestion model is trained through a machine learning algorithm. An energy-saving score of the sensing data is determined according to one or more energy-saving factors. The driving behavior report is generated according to the energy-saving scores. The energy-saving factor is a factor that affects energy consumption of the vehicle. The driving behavior report describes whether the energy-saving score is good or bad. Accordingly, the training and work efficiency could be improved.

Abstract: A semiconductor image sensing structure includes a substrate, an isolation structure, an anti-reflection structure, at least one optical element and a transistor. The substrate has at least one photodiode region. The isolation structure is disposed in the substrate and surrounds the photodiode region. The anti-reflection structure covers the photodiode region. The optical element is disposed over the anti-reflection structure and corresponds to the photodiode region. The transistor is disposed under the photodiode region.

Abstract: A touchpad device is to be operated by using a stylus pen, and includes a touchpad and a controller that are connected to each other. The controller is connected to an electronic device that includes a display panel, and operates in a stylus-pen mode where a handwriting area is presented on the display panel. When it is determined that a distance between the stylus pen and the touchpad is less than a preset pen-hover distance but is non-zero, the controller operates in a hover-move sub-mode where the controller outputs, based on a result of determination as to whether the electronic device is an iPad or not, two different control signals respectively for two different results of the determination to enable the electronic device to present, in the handwriting area, the cursor moving respectively in two different manners, without presenting a trace of the cursor.

Abstract: A semiconductor device and a method are provided. The semiconductor device includes a first semiconductor component, a bonding layer and a second semiconductor component. The first semiconductor component includes a first transistor formed on a substrate and a second transistor formed on the substrate and separated from the first transistor. The bonding layer is provided on the first semiconductor component. The second semiconductor component is provided on the bonding layer and includes an acoustic transducer. The acoustic transducer is controlled by the first transistor and the second transistor to execute a photoacoustic sensing. The acoustic transducer comprises a space gap and a least a portion of the space gap is surrounded by the bonding layer.

Abstract: This disclosure describes single and multi-layer woven meshes designed to enable sucking flow condensation and capillary-driven liquid film boiling, respectively, for instance, in use in heat spreaders. The single-layer woven meshes can include a nanostructure coating and a hydrophobic coating, while the multi-layer meshes can include a microcavity coating and optionally a hydrophilic coating.

Abstract: An electronic device which has a narrow viewing angle state and a wide viewing angle state includes a diffuser layer, a panel and a light source. The panel is disposed on the diffuser layer. The light source provides a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, and the second relative light intensity is 50% of the strongest light intensity. The first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°.

Abstract: An image sensor device includes a semiconductor substrate having a first side, and a trench isolation structure dividing the substrate into sensing units. Each sensing unit includes a first gate electrode and a second gate electrode disposed on the first side, and a first pixel and a second pixel extending into the substrate and disposed between the first and second gate electrodes from a top view perspective. The first pixel is disposed under the second pixel and electrically connected to the first gate electrode, and the second pixel is electrically connected to the second gate electrode. A method of manufacturing a semiconductor structure includes forming a trench isolation in a semiconductor substrate; forming a first pixel in the substrate; forming a second pixel in the substrate over the first pixel; forming a first gate structure over the substrate; and forming a second gate structure over the second pixel.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A III-V compound barrier layer is formed on a III-V compound semiconductor layer. A protection layer is formed on the III-V compound barrier layer. An opening is formed penetrating through the protection layer in a vertical direction and exposing a part of the III-V compound barrier layer. A p-type doped III-V compound material is formed in the opening. A patterned barrier layer is formed on the p-type doped III-V compound material. A contact area between the patterned barrier layer and the p-type doped III-V compound material is less than an area of a top surface of the p-type doped III-V compound material.

Abstract: A semiconductor image-sensing structure includes a semiconductor substrate having a front side and a back side, a photo-sensing element disposed in the semiconductor substrate, a color filter disposed over the back side of the semiconductor substrate, and an electric-optical modulator disposed between the color filter and the photo-sensing element. The electric-optical modulator includes a first electrode, a second electrode over the first electrode, and a micro-lens between the first electrode and the second electrode.

Abstract: A double side-scroll mouse device includes a housing unit, a main button unit, and a side scroll unit. The housing unit has a lower casing and a casing side skirt. The lower casing has spaced-apart first and second lateral face portions. The casing side skirt has a first operating wall extending upwardly from one of the first and second lateral face portions, and a second operating wall portion extending upwardly from the first operating wall portion. The side scroll unit includes a first scroll wheel member that is disposed on the first operating wall portion and that is rotatable about a first axis, and a second scroll wheel member that is disposed on the second operating wall portion and that is rotatable about a second axis being substantially perpendicular to the first axis.

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, the first isolation structure has an etch stop layer, the etch stop layer has an end portion, and the end portion has an H-like shape. The image sensor device includes a second isolation structure extending into the substrate from the back surface to the end portion. The second isolation structure surrounds a second portion of the light-sensing region.

Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.