Abstract: A method includes following steps. A target layer is formed over a substrate. A first hard mask layer is formed over the target layer by a plasma generated using a first radio frequency generator and a second radio frequency generator. The first radio frequency generator and the second radio frequency generator have different powers. A second hard mask layer is formed over the first hard mask layer by a plasma generated using the first radio frequency generator without using the second radio frequency generator. A photoresist layer is formed over the second hard mask layer. The photoresist layer is exposed. The photoresist layer is developed. The first hard mask layer and the second hard mask layer are patterned using the photoresist layer as an etch mask. The target layer is patterned using the first hard mask layer and the second hard mask layer as an etch mask.

Abstract: A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate and at least one contact plug. The substrate has an epi-layer. The contact plug is formed on the epi-layer and includes a silicide cap disposed on the epi-layer; a conductive pillar disposed on the silicide cap such that the conductive pillar electrically connects to the epi-layer via the silicide cap; and a hybrid liner. The hybrid liner surrounds the conductive pillar and includes a lower portion abutting the silicide cap and having a nitride material and an upper portion abutting the conductive pillar and having an oxidized nitride material. Due to the hybrid liner, a semiconductor structure with increased capacitance and decreased resistivity can be obtained.

Abstract: Discussed is a battery module, which includes a plurality of battery assemblies and a flexible rod. Each battery assembly includes a frame and at least one battery unit, and the at least one battery unit is disposed within the frame. The flexible rod sequentially passes through the plurality of battery assemblies, and the plurality of battery assemblies jointly construct a structure configured to be curved by bending the flexible rod.

Abstract: The present invention relates to a yeast gene ScFIT3 for regulating and controlling cadmium resistance of an organism and an application thereof. The yeast gene ScFIT3 for regulating and controlling the cadmium resistance of the organism has a nucleotide sequence as shown in SEQ ID NO.1. The present invention discloses, for the first time, the application of the yeast gene ScFIT3 in enhancing cadmium resistance of the organism. The yeast gene ScFIT3 is linked to an expression vector and transformed into a budding yeast, thereby completing construction of a cadmium-resistant yeast. The growth of the budding yeast transformed with the yeast gene ScFIT3 is significantly superior to that of a wild-type budding yeast, indicating that the budding yeast transformed with the yeast gene ScFIT3 has good resistance to cadmium stress, significantly enhances a capability of resisting heavy metal cadmium, and reduces accumulation and absorption of cadmium.

Abstract: Hydantoin based compounds useful as inhibitors of matrix metalloproteinases (MMPs), particularly macrophage elastase (MMP-12) are described. Also described are related compositions and methods of using the compounds to inhibit MMP-12 and treat diseases mediated by MMP-12, such as asthma, chronic obstructive pulmonary disease (COPD), emphysema, acute lung injury, idiopathic pulmonary fibrosis (IPF), sarcoidosis, systemic sclerosis, liver fibrosis, nonalcoholic steatohepatitis (NASH), arthritis, cancer, heart disease, inflammatory bowel disease (IBD), acute kidney injury (AKI), chronic kidney disease (CKD), Alport syndrome, and nephritis.

Abstract: A method for preparing a polyester modified material from a recycled release film includes continuously performing the following steps at an elevated temperature: subjecting the recycled release film to a first melting treatment to form a low-viscosity polyester; subjecting the low-viscosity polyester to a polymerization treatment to form a high-viscosity polyester, wherein a viscosity of the high-viscosity polyester is greater than a viscosity of the low-viscosity polyester; and adding a modifier to the high-viscosity polyester to perform a second melting treatment to form the polyester modified material.

Abstract: A stocking vehicle is provided. The stocking vehicle is configured to perform a stocking operation to transfer a first product unit from a first location to a second location. The stocking vehicle includes a stocking component. The stocking vehicle includes a motor coupled to the stocking component to facilitate performance of the stocking operation by the stocking component. The stocking vehicle includes an energy storage device configured to supply first energy to the motor during a first state of the motor and store second energy of the motor during a second state of the motor.

Abstract: A Bluetooth voice communication system includes: a Bluetooth host device arranged to operably conduct voice communication with a remote device; a first Bluetooth member device arranged to operably generate a left-channel voice data according to sounds captured by a first sound receiving circuit, and arranged to operably utilize a first Bluetooth communication circuit to transmit the left-channel voice data to the Bluetooth host device; and a second Bluetooth member device arranged to operably generate a right-channel voice data according to sounds captured by a second sound receiving circuit, and arranged to operably utilize a second Bluetooth communication circuit to transmit the right-channel voice data to the Bluetooth host device. The Bluetooth host device generates a stereo voice data based on the left-channel voice data and the right-channel voice data, and utilizes a signal transceiver circuit to transmit the stereo voice data to the remote device.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method includes depositing a mask layer over a dielectric layer, patterning the mask layer to form a trench, applying a patterned photo resist having a portion over the mask layer, and etching the dielectric layer using the patterned photo resist as an etching mask to form a via opening, which is in a top portion of the dielectric layer. The method further includes removing the patterned photo resist, and etching the dielectric layer to form a trench and a via opening underlying and connected to the trench. The dielectric layer is etched using the mask layer as an additional etching mask. A polymer formed in at least one of the trench and the via opening is removed using nitrogen and argon as a process gas. The trench and the via opening are filled to form a metal line and a via, respectively.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: An apparatus for inspecting a semiconductor substrate includes a rotatable base configured to support a substrate, and a nozzle arm includes a nozzle and a light monitoring device. The light monitoring device includes a laser transmitter and an array of light sensors arranged in the nozzle arm and facing the substrate. The light monitoring device is configured to transmit a laser pulse towards the substrate, wherein the laser pulse impinges on the substrate, receive a reflected laser pulse from the substrate, calculate whether one or more light sensors received the laser pulse, and calculate a distance between the light monitoring device and the substrate using the turnaround time for determining a process quality on the substrate.

Abstract: A photonic device structure and method of fabricating the same. The structure includes a substrate that has a first top oxide layer and a silicon layer that is formed on the first top oxide layer. The structure further includes a plurality of rib waveguide components that are formed in the silicon layer. A first rib waveguide component of the plurality includes first contact holes having a first contact hole depth, and a second rib waveguide component of the plurality includes second contact holes having a second contact hole depth, such that the depths of the first contact hole and the second contact hole are different.

Abstract: A device includes a first transistor, a second transistor, an interlayer dielectric (ILD) layer, and a backside gate rail. The first and second transistors are arranged along a first direction in a top view. The first transistor includes a first channel layer, a gate structure surrounding the first channel layer, a first source/drain epitaxial structure and a second source/drain epitaxial structure connected to the first channel layer. The second transistor includes a second channel layer, the gate structure surrounding the second channel layer, a third source/drain epitaxial structure and a fourth source/drain epitaxial structure connected to the second channel layer. A portion of the ILD layer is sandwiched between the first and third source/drain epitaxial structures. The backside gate rail is under the ILD layer and is electrically connected to the gate structure. The portion of the ILD layer is directly above the backside gate rail.

Abstract: The present disclosure relates to a method, a device, and a computer program product for upgrading a virtual storage system. The method for upgrading the virtual storage system is applied to a serverless platform, and includes receiving an upgrading instruction for the virtual storage system. The method further includes determining an upgrading type corresponding to the upgrading instruction and a preset execution file matched with the upgrading type, the preset execution file being pre-deployed in the serverless platform. The method further includes upgrading the virtual storage system by running the preset execution file in the serverless platform. In this way, a preset execution function is run in the serverless platform to upgrade the virtual storage system, which can save resource costs and operational costs for users. In addition, because the task processing efficiency of the serverless platform is high, the upgrading efficiency of the virtual storage system can further be improved.

Abstract: A rotating device and an electronic equipment accessory are provided. The rotating device includes a first connecting member and a second connecting member rotatable about a rotation axis relative to the first connecting member. An angle formed between the rotation axis and a length direction of the rotating device is acute such that the second connecting member can move upwards when rotating with respect to the first connecting member. Therefore, when the rotating device is applied to an electronic equipment accessory which is mounted on electronic equipment, the rotating device acting as a stand can be arranged between a magnetic charging structure of electronic equipment and a bottom edge of the electronic equipment, such that the rotating device will not shield the magnetic charging structure. The rotating device can act as a stand with a good support effect due to existing of the acute angle.

Abstract: A method includes: forming a stack of nanostructures over a substrate; forming a source/drain opening adjacent the stack of nanostructures; forming a semiconductor layer in the source/drain opening; forming an amorphous semiconductor layer by performing an ion implantation on the semiconductor layer; and forming a recrystallized source/drain by annealing the amorphous semiconductor layer.

Abstract: A cotton stuffing machine includes a roller conveyance device, a rotation device, an upward pushing device, and a downward pressing device. The roller conveyance device inputs cotton and presses and pulls the cotton to deliver a cotton section. The rotation device includes a plurality of rotation arms. Each rotation arm has a holding barrel on two ends thereof, and undergoes a 180-degree rotation displacement between a feeding position and an outputting position. The upward pushing device is disposed beneath the feeding position for pushing the cotton section upward into the holding barrel. The downward pressing device is disposed above the outputting position for pushing out the cotton section and inserting it into the bottle. Thus, the present invention improves the efficiency of stuffing operation for stuffing the cotton into the bottles.

Abstract: A lens assembly and Augmented Reality (AR) glasses, including a waveguide substrate, a wiring layer, a protective layer, an eye tracking component, and a lens. The waveguide substrate includes a first surface. The wiring layer is disposed on the first surface. The protective layer is disposed on the first surface and covering the wiring layer. The eye tracking component is disposed in the protective layer and is electrically connected with the wiring layer for tracking position of an eyeball. The lens is connected to a side of the protective layer away from the waveguide substrate. The AR glasses includes a display device and two lens assemblies. The display device is positioned between the two lens assemblies for emitting image light to the waveguide substrates of the two lens assemblies.