Abstract: An integrated device and a preparation method thereof are provided. The integrated device includes: a substrate; a compound semiconductor composite structure disposed on the substrate; a first component including a first electrode and second electrodes disposed on two sides of the first electrode; a second component including a gate electrode, and a source electrode and a drain electrode that are disposed on two sides of the gate electrode. The first electrode and the gate electrode are spaced apart on the compound semiconductor composite structure. The integrated device further includes an n-type nitride layer including a first n-type nitride layer disposed between the compound semiconductor composite structure and the first electrode; and a p-type nitride layer disposed between the compound semiconductor composite structure and the gate electrode. The integrated device improves its properties, a threshold voltage thereof is reduced, and turn-on power consumption thereof is reduced.

Abstract: A display device, comprising a display panel, a signal processor and an image processor. The display panel comprises a driving circuit and multiple pixel circuits. The driving circuit is configured to provide multiple driving voltages to the pixel circuits. The signal processor is coupled to the display panel to receive a first image signal. The image processor is coupled to the signal processor, and is configured to receive the first image signal from the signal processor. The signal processor is further configured to output multiple first voltage data according to the first image signal. The signal processor is configured to receive the first voltage data from the image processor, and is configured to convert the first voltage data into a first driving signal. The first driving signal is configured to cause the driving circuit to provide the driving voltages to the pixel circuits.

Abstract: Some implementations described herein provide techniques and apparatuses provide a semiconductor device including a photonics device having a backside transmissive region and methods of manufacturing. The semiconductor device includes a first semiconductor device stacked over a second semiconductor device, where the first semiconductor device includes a photodiode structure and the second semiconductor device includes the backside transmissive region. The backside transmissive region, which is below the photodiode structure of the first semiconductor device, includes a trench structure having highly reflective structures and/or properties to maintain an optical power of light waves propagating through the backside transmissive region. An absence of structures within the trench structure lessens a likelihood of interferences which may cause a transmission loss (e.g.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes top, bottom, and middle tiers. The bottom tier includes a first interconnect structure overlying a first semiconductor substrate, and a first front-side bonding structure overlying the first interconnect structure. The middle tier interposed between and electrically coupled to the top and bottom tiers includes a second interconnect structure overlying a second semiconductor substrate, a second front-side bonding structure interposed between the top tier and the second interconnect structure, and a back-side bonding structure interposed between the second semiconductor substrate and the first front-side bonding structure.

Abstract: The present disclosure relates to an image sensor integrated chip (IC) structure. The image sensor IC structure includes a plurality of image sensing elements respectively disposed within a plurality of pixel regions of a pixel array within a substrate. An inter-level dielectric (ILD) structure is disposed on a surface of the substrate and surrounds one or more interconnects. A plurality of three-dimensional (3D) capacitors are arranged within respective ones of the plurality of pixel regions and are coupled to one of the plurality of image sensing elements by the one or more interconnects. The plurality of 3D capacitors include a base region extending in parallel to the surface of the substrate and one or more fingers extending outward from the base region along a direction perpendicular to the surface of the substrate.

Abstract: The present disclosure provides a method of forming a semiconductor structure and a semiconductor structure. The method of forming the semiconductor structure includes: providing an initial structure, where the initial structure includes a substrate and a dielectric layer; forming a conductive trench, where a distance between a bottom surface of the conductive trench and a second side surface of the substrate is a first spacing; forming a conductive hole, where the conductive hole extends to the second side surface of the substrate from a top surface of the dielectric layer; forming a conductive pillar, where the conductive pillar fills the conductive hole; forming an inductor structure, where the inductor structure fills the conductive trench, and projection of the inductor structure on the substrate is provided as a spiral structure that uses projection of the conductive pillar on the substrate as an inductor center and that surrounds the inductor center.

Abstract: A package component includes a first substrate and a first conductive layer. The first substrate has a first surface and a second surface opposite to the first surface. The first conductive layer is disposed over the first surface of the first substrate. The first conductive layer includes a first conductive feature and a second conductive feature over the first conductive feature. The second conductive features covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the second conductive feature. The first substrate includes a single-sided or a double-sided copper-clad laminate.

Abstract: A power module with detachable function is provided. The power module includes a housing box part, a power component, a housing cover part, and a sensing component. The sensing component is configured to measure parameters of the power component and detachably installed on the housing cover part and the housing box part. When the housing cover part is mounted on the housing box part, the housing cover part and the housing box part can restrict the movement of the sensing component. Thus, a tight fit can be achieved.

Abstract: A semiconductor structure includes a substrate having a memory device region covered by a first dielectric layer, a memory stack structure on the first dielectric layer, an insulating layer conformally covering the memory stack structure and the first dielectric layer, a second dielectric layer on the insulating layer, an etching stop layer on the second dielectric layer, a third dielectric layer on the etching stop layer, and a second interconnecting structure through the third dielectric layer, the etching stop layer and the insulating layer to contact a top surface of the memory stack structure. The insulating layer directly contacts a bottom surface of the etching stop layer and partially covers a bottom surface and a lower sidewall of the second interconnecting structures.

Abstract: A pixel circuit driving method comprising: receiving an image signal, wherein the image signal comprises multiple pixel values; using a first lookup table to obtain multiple first voltage data corresponding to the multiple pixel values in a first original frame; using a second lookup table to generate a multiple first voltage combinations according to the multiple first voltage data, wherein each of the multiple first voltage combinations comprises multiple update voltages, and the multiple first voltage combinations correspond to a multiple first update frames; generating the multiple update voltages to multiple driving multiplexing circuits according to each of the multiple first voltage combinations by multiple power generating circuits; and using the multiple update voltages as multiple driving voltages to provided to multiple pixel circuits by the multiple power generating circuits.

Abstract: In an embodiment, a processor may include an execution engine to execute a plurality of instructions, a memory to store a tagged data structure comprising a plurality of entries, and an eviction circuit. The eviction circuit may be to: generate a pseudo-random number responsive to an eviction request for the tagged data structure; in response to a determination that the pseudo-random number is outside of a valid eviction range for the plurality of entries, generate an alternative identifier by rotating through the valid eviction range, the valid eviction range comprising a range of numbers that are valid to identify victim entries of the tagged data structure; and evict a victim entry from the tagged data structure, the victim entry associated with the alternative identifier. Other embodiments are described and claimed.

Abstract: Some embodiments relate to an integrated device, including a first contact wire comprising an upper surface over a substrate; a plurality of shielding wires level with the first contact wire and having upper surfaces that are level with the upper surface of the first contact wire; and a first capacitor having an upper layer and a plurality of protrusions including a first protrusion and a second protrusion extending from the upper layer in a first direction towards the shielding wires; wherein the first protrusion extends to the upper surface of the first contact wire; and wherein the second protrusion is over and separated from the shielding wires in the first direction.

Abstract: A semiconductor structure includes a substrate including a dielectric layer over a semiconductor layer and an active region protruding from the dielectric layer. The active region includes a stack of semiconductor layers. The semiconductor structure further includes a metal gate structure disposed over the active region and interleaved with the stack of semiconductor layers, an isolation structure over the dielectric layer and covering sidewalls of a bottommost semiconductor layer, and an epitaxial source/drain (S/D) feature disposed adjacent to the metal gate structure. A bottom surface of the epitaxial S/D feature is defined by the bottommost semiconductor layer, and a portion of the bottommost semiconductor layer under the epitaxial S/D feature has a thickness less than a thickness of the dielectric layer.

Abstract: A semiconductor structure includes: a semiconductor substrate; a first metal layer located on a surface of the semiconductor substrate; a second metal layer located above a surface of the first metal layer; an insulating layer located between the first metal layer and the second metal layer and configured to isolate the first metal layer from the second metal layer; and at least four vias located in the insulating layer and a conductive material for connecting the first metal layer and the second metal layer is filled in the at least four vias.

Abstract: A static random access memory cell and a method for forming the same are provided. The method for forming a memory cell includes: providing a base; in which the base at least includes a substrate and an active area formed in the substrate; forming trenches extending in a first direction and arranged in a second direction in the active area; forming second gate structures extending in the first direction in the trenches; trimming the second gate structures in the second direction to form first gate structures; in which in a memory including static random access memory cells, every two rows of the first gate structures and the first gate structures separated by two rows have same opening positions; forming recessed channel array transistors based on the first gate structures; forming a static random access memory cell with six transistors based on the recessed channel array transistors.

Abstract: A semiconductor structure includes: a substrate; a gate structure on the substrate; and an interconnect structure including a first interconnect sub-structure and a second interconnect sub-structure, where the second interconnect sub-structure protrudes from the first interconnect sub-structure. The first interconnect sub-structure is connected with the substrate, and the second interconnect sub-structure is connected with a top of the gate structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first superlattice structure and a second superlattice structure over the substrate, a gate stack that surrounds a channel region of each of the first superlattice structures and the second superlattice structure, and source/drain structures on opposite sides of the gate stack contacting sidewalls of the first superlattice structure and the second superlattice structure. The second superlattice structure is disposed over the first superlattice structure. Each of the first superlattice structures and the second superlattice structure includes vertically stacked alternating first nanosheets of a first semiconductor material and second nanosheets of a second semiconductor material that is different from the first semiconductor material.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer transistor includes a transfer gate having a lateral portion extending over a frontside of the semiconductor substrate and a vertical portion extending to a first depth below the frontside of the semiconductor substrate. A gate dielectric separates the lateral portion and the vertical portion from the semiconductor substrate. A backside trench isolation structure extends from a backside of the semiconductor substrate to a second depth below the frontside of the semiconductor substrate. The backside trench isolation structure laterally surrounds the photodetector, and the second depth is less than the first depth such that a lowermost portion of the vertical portion of the transfer transistor has a vertical overlap with an uppermost portion of the backside trench isolation structure.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first inter-metal dielectric (IMD) structure disposed over a semiconductor substrate. A metal-insulator-metal (MIM) device is disposed over the first IMD structure. The MIM device includes at least three metal plates that are spaced from one another. The MIM device further includes a plurality of capacitor insulator structures. Each of the plurality of capacitor insulator structures are disposed between and electrically isolate neighboring metal plates of the at least three metal plates.