Abstract: A method includes providing a semiconductor structure including a device fin protruding from a substrate, forming a dummy gate stack over the device fin, forming a first spacer over the device fin and the dummy gate stack, forming a second spacer over the first spacer, forming a dielectric feature adjacent to the second spacer, and replacing the dummy gate stack with a metal gate stack. Thereafter, the method removes the second spacer, thereby forming an air gap between the first spacer and the dielectric feature and wrapping around the device fin. The method then forms a sealing layer over the first spacer and the dielectric feature, thereby sealing the air gap.

Abstract: The embodiments of the present application provide a semiconductor structure manufacturing method for forming a semiconductor structure.

Abstract: A method is provided that includes forming a cavity in a substrate. The cavity is formed to extend into the substrate from a first surface to a second surface. Sidewall spacers are formed on sidewalls of the substrate in the cavity. A semiconductor layer is formed on the second surface in the cavity of the substrate, and the semiconductor layer abuts the sidewall spacers in the cavity.

Abstract: A model representing a physical object is received. The model contains a pilot node, one or more surface nodes, and a constraint for coupling displacements/movements of the pilot node with the one or more surface nodes via a set of constraint equations. The pilot node is subject to a condition that restricts node swapping for resolving node dependency in elimination method. An internal node is created based on the pilot node. The internal node and the pilot node occupy a same location initially. The internal node and the one or more surface nodes are constrained via the set of constraint equations. The model is modified with the internal node and a numerical spring connecting the pilot node and the internal node. The numerical spring is configured for limiting relative movements between the pilot node and the internal node. Physical behaviors of the physical object are simulated using the modified model.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, the 3D IC comprises a first IC die comprising a first substrate, a first interconnect structure disposed over the first substrate, and a first through substrate via (TSV) disposed through the first substrate. The 3D IC further comprises a second IC die comprising a second substrate, a second interconnect structure disposed over the second substrate, and a second TSV disposed through the second substrate. The 3D IC further comprises a bonding structure arranged between back sides of the first IC die and the second IC die opposite to corresponding interconnect structures and bonding the first IC die and the second IC die. The bonding structure comprises conductive features disposed between and electrically connecting the first TSV and the second TSV.

Abstract: A data accessing method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: reading a codeword stored in a physical programming unit, and calculating a bit change ratio of a bit value change in dummy data included in the codeword; adjusting a read voltage level or a log likelihood ratio according to the bit change ratio; and performing a decoding operation on the codeword by using the adjusted read voltage level or the adjusted log likelihood ratio.

Abstract: A memory device includes a memory cell in a first power domain of a first power supply voltage, a bit line coupled to the memory cell, and a write assist circuit. The write assist circuit includes an input, an output electrically couplable to the bit line in a write operation of the memory cell, an input circuit electrically coupled to the input, and an output circuit electrically coupled between the input circuit and the output. The input circuit is in a second power domain of a second power supply voltage different from the first power supply voltage, and the output circuit is in the first power domain.

Abstract: A multi-node server includes a server chassis, a main circuit board, a power delivery circuit board, and a signal transfer module. The main circuit board has a first node area and a second node area. The power delivery circuit board is disposed vertically on the main circuit board. A first side of the power delivery circuit board has a first power input connector and a second power input connector. A second side of the power delivery circuit board has a first power output connector facing the first node area and a second power output connector facing the second node area. The signal transfer module has a signal transfer circuit board, a first signal connector, and a second signal connector. The signal transfer circuit board is parallel to the main circuit board. The signal transfer circuit board electrically connects the first signal connector to the second signal connector.

Abstract: A test fixture assembly is for performing a test of a DUT (Device under Test), the DUT includes a plurality of pins exposed on a surface of the DUT, and the test fixture assembly includes a circuit board and a socket unit. The circuit board includes a plurality of test pads, which are exposed on a surface of the circuit board. The socket unit includes a socket base and a plurality of socket probes, which are inserted through the socket base. A first end and a second end of each of the socket probes are respectively exposed on two opposite surfaces of the socket base. Each of the test pads, a corresponding one of the socket probes and a corresponding one of the pins are configured to be linearly arranged along a socket probe direction.

Abstract: An antenna test assembly includes a DUT (Device under Test). The DUT includes an antenna module and a circuit board. The antenna module includes a first antenna element, which includes a first antenna pin and a second antenna pin. The circuit board includes a first line and a second line, and two ends of each of the first line and the second line are electrically connected to two metal pads, respectively, exposed on the circuit board. When the antenna test assembly is in an equipment test mode, the first line, the first antenna pin, the second antenna pin and the second line are electrically connected in sequence.

Abstract: Disclosed are various embodiments for bootstrapping for computing devices implementing functions for a radio-based network. In one embodiment, a request is received from a bootstrap agent executed in a computing device. A unique identifier presented by the bootstrap agent is verified. An installation recipe associated with the unique identifier and specified by a customer associated with the computing device is then determined. A secure communication channel with the bootstrap agent is created. The bootstrap agent installs an installation agent on the computing device. The installation agent installs and configures software on the computing device that implements one or more network functions for a radio-based network of the customer according to the installation recipe.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: An integrated air valve structure includes a main body and two air valves. The main body is formed with two air passages not communicated with each other, a plurality of through holes disposed corresponding to the two air passages, and two valve mounting seats. One valve mounting seat is disposed corresponding to one of the through holes, the other valve mounting seat is disposed corresponding to two of the through holes belonging to the two air passages. The two air valves are disposed on the two valve mounting seats, each air valves includes an air plug facing at least one of the through holes, a valve body assembled with one of the two valve mounting seats for the air plug to move therein, and a coil disposed on the valve body for generating magnetic force to change a position of the air plug.

Abstract: A pixel array that includes some pixels with high absorption (HA) structures and other pixels without HA structures exhibits increased dynamic range for near infrared (NIR) light. Additionally, the pixel array is a uniform array of photodiodes and thus does not exhibit current leakage that would have been caused by irregular isolation structures. Additionally, the pixel array may further a lateral overflow integration capacitor to further increase the dynamic range for NIR light.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a shield structure blocks the migration of charge to a semiconductor device from proximate a through substrate via (TSV). In some embodiments, the IC comprises a substrate, an interconnect structure, the semiconductor device, the TSV, and the shield structure. The interconnect structure is on a frontside of the substrate and comprises a wire. The semiconductor device is on the frontside of the substrate, between the substrate and the interconnect structure. The TSV extends completely through the substrate, from a backside of the substrate to the wire, and comprises metal. The shield structure comprises a PN junction extending completely through the substrate and directly between the semiconductor device and the TSV.

Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface; a plurality of pixel sensors disposed in the substrate, a sensor isolation feature disposed in the substrate defining an active region, and a dielectric layer between the sensor isolation feature and the substrate, wherein the sensor isolation feature comprises a conductive material.

Abstract: The present disclosure relates to a multi-dimensional image sensor integrated chip (IC) structure. The multi-dimensional image sensor IC structure includes a plurality of image sensing elements disposed within a plurality of pixel regions arranged in a pixel array of a first integrated chip (IC) tier. The plurality of pixel regions include a plurality of active pixel regions and one or more dummy pixel regions. A plurality of pixel support devices are disposed on a second substrate within a second IC tier that is bonded to the first IC tier. A plurality of logic devices are disposed within a third IC tier that is bonded to the second IC tier. A through substrate via (TSV) extends vertically through the second substrate laterally outside of the plurality of pixel support devices and directly below the pixel array.