Abstract: A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.

Abstract: An embedded bi-layer structure for an attenuated phase-shifting mask comprises an inner layer with lower transmittance, formed on a substrate; and an outer layer, formed on the inner layer, with higher transmittance and being more chemically stable than the inner layer. A method of forming such an embedded bi-layer structure is provided.

Abstract: A blank mask for photomasking patterns on an integrated circuit comprises a non-conductive substrate and a layer of conductive material deposited on the substrate covering substantially the entire surface of said substrate. Methods for preventing charge accumulation on a non-conductive region of a mask, which is not covered by a layer of conductive material, are provided. One method comprises controlling electron beams to prevent the beams from striking an outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the mask. The outer region comprises an area beginning from an edge of the mask and ending at 2 to 6 mm inward from the edge. Another method comprises using a blocker to prevent electron beams from hitting the outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the substrate.

Abstract: A method for repairing a transparent photomask substrate and a transparent photomask substrate repaired in accord with the method employ when eliminating a defect within a transparent photomask substrate a multi-stepped aperture having a series of progressive steps which separate a series of progressive plateaus. Each plateau has a plateau width and a step height such as to enhance transparent photomask substrate transmittance within the multi-stepped aperture. The method provides for efficient repair of a transparent photomask substrate.

Abstract: An attenuating phase shifting mask for forming contact holes in a layer of negative resist, a method of forming the mask, and a method of forming the contact holes are described. The mask is formed from a mask blank having a layer of attenuating phase shifting material formed on a transparent mask blank. The attenuating phase shifting material has a transmittance of greater than 20% and between about 20% and 50% for light having a wavelength of 193 nanometers. The mask is a dark tone mask having mask elements formed of the attenuating phase shifting material at the locations of the mask corresponding to the locations of the contact holes. The mask is used to expose a layer of negative resist which is then developed to form the contact holes.

Abstract: A bi-layer attenuating phase shifting film and method of forming the film are described. The bi-layer film has a first layer of AlSix1Oy1 and a second layer of AlSix2Oy2. The first layer of AlSix1Oy1 and the second layer of AlSix2Oy2 are both deposited by sputtering using a sputtering system an aluminum target, a silicon target, a source of oxygen gas, and a source of argon gas. The index of refraction, n, and the extinction coefficient, k, of the deposited films are controlled by controlling the direct current, DC, power to the aluminum target and by controlling the oxygen flow rate. The values of n and k are selected to produce a bi-layer film having a transmittance of between about 15% and 45% and good chemical stability. The phase shift of the bi-layer film is determined by the index of refraction, extinction coefficient, and thickness of each of the films.