Abstract: The present disclosure relates to a semiconductor device including a substrate and first and second spacers on the substrate. The semiconductor device also includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers; an internal gate formed on the first and second portions of the gate dielectric layer; a ferroelectric dielectric layer formed on the internal gate and in contact with the gate dielectric layer; and a gate electrode on the ferroelectric dielectric layer.

Abstract: A method for fabricating a photomask is provided. The method includes several operations. A photomask substrate, having a chip region and a peripheral region adjacent to the chip region, is received. A reference pattern is formed by emitting one first radiation shot and a first beta pattern is formed by emitting a plurality of second radiation shots in the peripheral region. The plurality of second radiation shots are emitted along a first direction. A roughness of a boundary of the first beta pattern along the first direction is compared to a roughness of a boundary of the reference pattern along the first direction from a top view perspective. An alignment of the plurality of second radiation shots is adjusted if a result of the comparison exceeds a tolerance, or the photomask is formed. A photomask structure thereof and a method for manufacturing a semiconductor are also provided.

Abstract: A method for forming a semiconductor structure is provided. The method includes patterning a semiconductor substrate to form a semiconductor fin, forming a source/drain structure on the semiconductor fin, forming an interfacial layer on the semiconductor fin, treating the interfacial layer with fluorine, forming a ferroelectric gate dielectric layer on the interfacial layer, treating the ferroelectric gate dielectric layer with fluorine, and forming a gate electrode layer on the ferroelectric gate dielectric layer.

Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.

Abstract: The present disclosure relates to a semiconductor device includes a substrate and first and second spacers on the substrate. The semiconductor device includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers. The first portion includes a crystalline material and the second portion comprises an amorphous material.

Abstract: A method of forming a semiconductor device includes forming a sacrificial layer on sidewalls of gate spacers disposed over a semiconductor layer, forming a first hafnium-containing gate dielectric layer over the semiconductor layer in a first trench disposed between the gate spacers, removing the sacrificial layer to form a second trench between the gate spacers and the first hafnium-containing gate dielectric layer, forming a second hafnium-containing gate dielectric layer over the first hafnium-containing gate dielectric layer and on the sidewalls of the gate spacers, annealing the first and the second hafnium-containing gate dielectric layers while simultaneously applying an electric field, and subsequently forming a gate electrode over the annealed first and second hafnium-containing gate dielectric layers.

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Abstract: A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.

Abstract: A semiconductor structure that includes a semiconductor fin disposed over a substrate, S/D features disposed over the semiconductor fin, and a metal gate stack interposed between the S/D features. The metal gate stack includes a gate dielectric layer disposed over the semiconductor fin, a capping layer disposed over the gate dielectric layer, and a gate electrode disposed over the capping layer, where the gate dielectric layer includes hafnium oxide with hafnium atoms and oxygen atoms arranged in a Pca21 space group.

Abstract: A semiconductor device includes a semiconductor substrate, a pair of source/drain regions, and a gate stack. The pair of source/drain regions is on the semiconductor substrate. The gate stack is laterally between the source/drain regions and includes a gate dielectric layer over the semiconductor fin, a metal element-containing layer over the gate dielectric layer, and a fill metal layer over the metal element-containing layer. The metal element-containing layer has a dopant, and a concentration of the dopant in an upper portion of the metal element-containing layer is higher than a concentration of the dopant in a bottom portion of the metal element-containing layer.

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Abstract: A method of forming a semiconductor device includes forming a hafnium-containing layer over a semiconductor layer, simultaneously performing a thermal annealing process and applying an electrical field to the hafnium-containing layer to form a ferroelectric hafnium-containing layer, and forming a gate electrode over the ferroelectric hafnium-containing layer.

Abstract: A method includes forming a gate dielectric layer over a semiconductor substrate, forming a first metal element-containing layer over the gate dielectric layer, and thermal soaking the first metal element-containing layer in a first gas, such that a constituent of the first gas is diffused into the first metal element-containing layer.

Abstract: A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.

Abstract: A method of forming a semiconductor device includes forming a hafnium-containing layer over a semiconductor layer, simultaneously performing a thermal annealing process and applying an electrical field to the hafnium-containing layer to form a ferroelectric hafnium-containing layer, and forming a gate electrode over the ferroelectric hafnium-containing layer.

Abstract: A portable microscope apparatus operated with an image capture device includes a sample carrying module, a lens module, a first polarizer and a second polarizer. The sample carrying module includes a transparent carrier and a sample adhesive element including a substrate and a glue layer. The substrate has a concave portion and an extending portion. The concave portion is adjacently connected to the extending portion to form a first surface. The glue layer is at least partially disposed on the first surface and in an integrated form with the substrate. The lens module is detachably connected to the image capture device, and disposed between the sample carrying module and the image capture device. The first polarizer is disposed on an optical path on one side of the sample carrying module. The second polarizer is disposed on the optical path on the other side of the sample carrying module.

Abstract: A method for forming a photomask includes receiving a substrate having a first layer formed thereon, wherein a patterned second layer exposing portions of the first layer is disposed over the substrate, removing the exposed portions of the first layer through the patterned second layer to form a plurality of openings in the first layer, removing the patterned second layer, and performing a wet etching to remove portions of the first layer to widen the plurality of openings with an etchant. The etchant is in contact with a top surface of the first layer and sidewalls of the plurality of openings. Each of the plurality of openings has a first width prior to the performing of the wet etching and a second width after the performing of the wet etching. The second width is greater than the first width.

Abstract: A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.

Abstract: A microscope apparatus includes a sample carrying module, a light source module and a lens module. The sample carrying module includes an adhesive element and a body having a light-transmission region and a sample viewing surface. The adhesive element is detachably adhered to the body, and at least partially covers the light-transmission region, such that the adhesive element is disposed adjacent to the sample viewing surface. The light source module is detachably disposed at a side of the body, and includes a base and a light source. The base has an aperture, and the sample carrying module is detachably disposed at a side of the aperture. The light source is disposed in the base. The lens module includes at least one lens, which is detachably disposed at one side of the sample carrying module and substantially focuses at the sample viewing surface, and corresponds to the light source module.

Abstract: The present invention discloses a portable microscope device which can be installed on the smartphone capable of capturing image. By combing these devices, users can observe the detection sample and capture the image of the sample instantly without environment limitation. Moreover, during operation, the user can observe the whole image of the sample by substituting the microscope lens of different magnification ratio or by shifting the position of the sample.