Patents by Inventor Cheng-Ming Wu

Cheng-Ming Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11989005
    Abstract: A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: May 21, 2024
    Assignee: MediaTek Inc.
    Inventors: Bo-Jr Huang, Jia-Wei Fang, Jia-Ming Chen, Ya-Ting Chang, Chien-Yuan Lai, Cheng-Yuh Wu, Yi-Pin Lin, Wen-Wen Hsieh, Min-Shu Wang
  • Publication number: 20240159642
    Abstract: A smoke detector with an anti-insect function includes a substrate, an optical detection module, a top cover, a base and a perforated plate. The substrate has a ring shape region surrounding a central detection region, and a first block structure of the central detection region is protruded from the substrate and higher than an upper surface of the ring shape region. The optical detection module is disposed inside the central detection region. The top cover has a lateral wall. The base is disposed on the substrate and connected to the top cover to cover the optical detection module. The base has a second block structure partly overlapped with the lateral wall to form a guiding channel. The perforated plate is disposed between the lateral wall and the second block structure to prevent an insect from moving into the top cover through the guiding channel.
    Type: Application
    Filed: January 25, 2024
    Publication date: May 16, 2024
    Applicant: PixArt Imaging Inc.
    Inventors: Yen-Chang Chu, Cheng-Nan Tsai, Chih-Ming Sun, Zhi-Hao Wu, Hung-Yu Lai
  • Publication number: 20240162051
    Abstract: Some implementations described herein include systems and techniques for fabricating a stacked die product. The systems and techniques include using a supporting fill mixture that includes a combination of types of composite particulates in a lateral gap region of a stack of semiconductor substrates and along a perimeter region of the stack of semiconductor substrates. One type of composite particulate included in the combination may be a relatively smaller size and include a smooth surface, allowing the composite particulate to ingress deep into the lateral gap region. Properties of the supporting fill mixture including the combination of types of composite particulates may control thermally induced stresses during downstream manufacturing to reduce a likelihood of defects in the supporting fill mixture and/or the stack of semiconductor substrates.
    Type: Application
    Filed: April 27, 2023
    Publication date: May 16, 2024
    Inventors: Kuo-Ming WU, Hau-Yi HSIAO, Kai-Yun YANG, Che Wei YANG, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
  • Patent number: 11984431
    Abstract: A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.
    Type: Grant
    Filed: January 19, 2023
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo-Ming Wu, Yung-Lung Lin, Zhi-Yang Wang, Sheng-Chau Chen, Cheng-Hsien Chou
  • Patent number: 11951569
    Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Ming Wu, Yung-Lung Lin, Hau-Yi Hsiao, Sheng-Chau Chen, Cheng-Yuan Tsai
  • Patent number: 11937932
    Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: March 26, 2024
    Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITY
    Inventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
  • Publication number: 20240079268
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.
    Type: Application
    Filed: November 10, 2023
    Publication date: March 7, 2024
    Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
  • Patent number: 11923235
    Abstract: A method includes forming a first trench and a second trench in a semiconductor substrate; forming a first mask over the semiconductor substrate, wherein the first mask is disposed in a first portion of the first trench and exposes the second trench and a second portion of the first trench; after forming the first mask, deepening the second trench and the second portion of the first trench; after deepening the second trench and the second portion of the first trench, removing the first mask; and after removing the first mask, filling a dielectric material in both the first and second trenches.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Chii-Ming Wu, Sen-Hong Syue, Cheng-Po Chau
  • Patent number: 11923253
    Abstract: A device includes a first transistor, a second transistor, and a dielectric structure. The first transistor is over a substrate and has a first gate structure. The second transistor is over the substrate and has a second gate structure. The dielectric structure is between the first gate structure and the second gate structure. The dielectric structure has a width increasing from a bottom position of the dielectric structure to a first position higher than the bottom position of the dielectric structure. A width of the first gate structure is less than the width of the dielectric structure at the first position.
    Type: Grant
    Filed: February 10, 2023
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuei-Ming Chang, Rei-Jay Hsieh, Cheng-Han Wu, Chie-luan Lin
  • Patent number: 11916077
    Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Liang Chen, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Ru-Gun Liu, Wei-Cheng Lin, Lei-Chun Chou, Wei-An Lai
  • Publication number: 20240047487
    Abstract: An image sensor device includes a semiconductor substrate having a first side, and a trench isolation structure dividing the substrate into sensing units. Each sensing unit includes a first gate electrode and a second gate electrode disposed on the first side, and a first pixel and a second pixel extending into the substrate and disposed between the first and second gate electrodes from a top view perspective. The first pixel is disposed under the second pixel and electrically connected to the first gate electrode, and the second pixel is electrically connected to the second gate electrode. A method of manufacturing a semiconductor structure includes forming a trench isolation in a semiconductor substrate; forming a first pixel in the substrate; forming a second pixel in the substrate over the first pixel; forming a first gate structure over the substrate; and forming a second gate structure over the second pixel.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: FENG-CHIEN HSIEH, YUN-WEI CHENG, WEI-LI HU, KUO-CHENG LEE, CHENG-MING WU
  • Publication number: 20240021009
    Abstract: An image sensing apparatus is disclosed. The image sensing apparatus includes a pixel array and micro lenses disposed above the pixel array. The pixel array includes sensing pixels configured to capture minutia points of a fingerprint and positioning pixels configured to provide positioning codes.
    Type: Application
    Filed: March 22, 2023
    Publication date: January 18, 2024
    Inventors: Feng-Chien Hsieh, Yun-Wei Cheng, Kuo-Cheng Lee, Cheng-Ming Wu, Wei-Li Hu
  • Publication number: 20230402480
    Abstract: A method of manufacturing a semiconductor device includes disposing a plurality of a first type of light sensing units on a substrate; and disposing a plurality of a second type of light sensing units arranged on the substrate. Each of the first type of light sensing units is operable to receive less radiation than each of the second type of light sensing units. At least one of the second type of light sensing units is adjacent to a portion of at least one of the first type of light sensing units. The method includes disposing a first isolation structure between one of the first type of light sensing units and one of the second type of light sensing units; and disposing a second isolation structure between the adjacent first type of light sensing units. The method includes disposing a reflective layer above the first type of light sensing units.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 14, 2023
    Inventors: Li-Wen HUANG, Chung-Lin FANG, Kuan-Ling PAN, Ping-Hao LIN, Kuo-Cheng LEE, Cheng-Ming WU
  • Publication number: 20230402482
    Abstract: The present disclosure provides an integrated circuit (IC) structure with a solar cell and an image sensor array. An integrated structure according to the present disclosure includes a first substrate including a plurality of photodiodes, an interconnect structure disposed on the first substrate, a first bonding layer disposed on the interconnect structure, a second bonding layer disposed on the first bonding layer, a second substrate disposed on the second bonding layer, and a transparent conductive oxide layer disposed on the second substrate.
    Type: Application
    Filed: August 22, 2022
    Publication date: December 14, 2023
    Inventors: Feng-Chien Hsieh, Yun-Wei Cheng, Ping Kuan Chang, Kuo-Cheng Lee, Cheng-Ming Wu
  • Publication number: 20230402488
    Abstract: A pixel sensor may include a vertically arranged (or vertically stacked) photodiode region and floating diffusion region. The vertical arrangement permits the photodiode region to occupy a larger area of a pixel sensor of a given size relative to a horizontal arrangement, which increases the area in which the photodiode region can collect photons. This increases performance of the pixel sensor and permits the overall size of the pixel sensor to be reduced. Moreover, the transfer gate may surround at least a portion of the floating diffusion region and the photodiode region, which provides a larger gate switching area relative to a horizontal arrangement. The increased gate switching area may provide greater control over the transfer of the photocurrent and/or may reduce switching delay for the pixel sensor.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 14, 2023
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Kuo-Cheng LEE, Cheng-Ming WU
  • Patent number: 11837619
    Abstract: A semiconductor arrangement includes a photodiode extending to a first depth from a first side in a substrate. An isolation structure laterally surrounds the photodiode and includes a first well that extends into a first side of the substrate. A deep trench isolation extends into a second side of the substrate and at least a portion of the deep trench isolation underlies the first well.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: December 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Feng-Chien Hsieh, Yun-Wei Cheng, Kuo-Cheng Lee, Cheng-Ming Wu
  • Publication number: 20230387171
    Abstract: A pixel sensor may include a deep trench isolation (DTI) structure that extends the full height of a substrate in which a photodiode of the pixel sensor is included. Incident light entering the pixel sensor at a non-orthogonal angle is absorbed or reflected by the DTI structure along the full height of the substrate. In this way, the DTI structure may reduce, minimize, and/or prevent the incident light from traveling through the pixel sensor and into an adjacent pixel sensor along the full height of the substrate. This may increase the spatial resolution of an image sensor in which the DTI structure is included, may increase the overall sensitivity of the image sensor, may reduce and/or prevent color mixing between pixel sensors of the image sensor, and/or may decrease image noise after color correction.
    Type: Application
    Filed: August 3, 2023
    Publication date: November 30, 2023
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Kuo-Cheng LEE, Cheng-Ming WU
  • Publication number: 20230387152
    Abstract: A pixel sensor includes a transfer fin field effect transistor (finFET) to transfer a photocurrent from a photodiode to a drain region. The transfer finFET includes at least a portion of the photodiode, an extension region associated with the drain region, a plurality of channel fins, and a transfer gate at least partially surrounding the channel fins to control the operation of the transfer finFET. In the transfer finFET, the transfer gate is wrapped around (e.g., at least three sides) of each of the channel fins, which provides a greater surface area over which the transfer gate is enabled to control the transfer of electrons. The greater surface area results in greater control over operation of the finFET, which may reduce switching times of the pixel sensor (which enables faster pixel sensor performance) and may reduce leakage current of the pixel sensor relative to a planar transfer transistor.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Wei-Li HU, Kuo-Cheng LEE, Cheng-Ming WU
  • Publication number: 20230375712
    Abstract: A pixel array may include a group of time-of-flight (ToF) sensors. The pixel array may include an image sensor comprising a group of pixel sensors. The image sensor may be arranged among the group of ToF sensors such that the image sensor is adjacent to each ToF sensor in the group of ToF sensors.
    Type: Application
    Filed: August 2, 2023
    Publication date: November 23, 2023
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Kuo-Cheng LEE, Cheng-Ming WU
  • Publication number: 20230369369
    Abstract: Some implementations described herein provide pixel sensor configurations and methods of forming the same. In some implementations, one or more transistors of a pixel sensor are included on a circuitry die (e.g., an application specific integrated circuit (ASIC) die or another type of circuitry die) of an image sensor device. The one or more transistors may include a source follower transistor, a row select transistor, and/or another transistor that is used to control the operation of the pixel sensor. Including the one or more transistors of the pixel sensor (and other pixel sensors of the image sensor device) on the circuitry die reduces the area occupied by transistors in the pixel sensor on the sensor die. This enables the area for photon collection in the pixel sensor to be increased.
    Type: Application
    Filed: May 11, 2022
    Publication date: November 16, 2023
    Inventors: Feng-Chien HSIEH, Yun-Wei CHENG, Wei-Li HU, Kuo-Cheng LEE, Cheng-Ming WU