Abstract: An electrical detection method provides a wiring structure including a base material body and a plurality of contact portions bonded to the base material body. Each of the contact portions includes an electrical detection pad exposed from a surface of the base material body, an electrical auxiliary pad exposed from the surface of the base material body, and a conductor that electrically connects the electrical detection pad and the electrical auxiliary pad. When probes of a detection device are connected to the contact portions, each of the probes exerts a force on the electrical detection pad and the electrical auxiliary pad of each of the contact portions at the same time, so that the contact force between the probes and the contact portions is enhanced to facilitate the electrical testing.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a reader. The reader broadcasts a radio signal indicating an available slot set. The reader transmits an acknowledge (ACK) signal including a decoded sequence to an ambient internet of things (A-IoT) device. The reader receives an identifier from the A-IoT device. The identifier is a reply of the A-IoT device when there is a match between the decoded sequence and a chosen sequence, and the chosen sequence is a random sequence that responds to the radio signal in a random slot chosen from the available slot set.

Abstract: A semiconductor device includes two source/drain regions, two isolation elements, a channel feature, at least one semiconductor layer and a gate feature. The source/drain regions are spaced apart from each other, and are respectively disposed above the isolation elements. The channel feature includes at least one effective channel layer and at least one dummy channel layer that are spaced apart from each other. Each of the at least one effective channel layer extends between the source/drain regions. Each of the at least one dummy channel layer extends between the isolation elements. The at least one semiconductor layer at least covers a lower surface of a bottommost one of the at least one dummy channel layer. The gate feature is disposed around the at least one effective channel layer, such that two opposite surfaces of each of the at least one effective channel layer are adjacent to the gate feature.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a reader. The reader receives a response signal set that responds to a radio signal, from an ambient internet of things (A-IoT) device set, a response signal in the response signal set being modulated by a corresponding A-IoT device in the A-IoT device set to include an identification of the corresponding A-IoT device. The reader identifies the corresponding A-IoT device based on the identification of the corresponding A-IoT device, and performs measurement for a positioning parameter. The reader executes a positioning related operation based on the identified A-IoT device and the measurement for the positioning parameter.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and patterned absorber layer on the reflective multilayer stack is provided with a pellicle membrane frame attached to the substrate. In some embodiments, the pellicle membrane frame is attached to the substrate using an adhesive between the pellicle membrane frame and the substrate. In some embodiments, the pellicle membrane frame is located in a trench formed in the reflective multilayer stack and patterned absorber layer. In other embodiments, the pellicle membrane frame not located in a trench formed in the reflective multilayer stack and patterned absorber layer.

Abstract: A semiconductor device includes a substrate, an active structure, a first dielectric layer and a second dielectric layer. The active structure is formed on the substrate and includes an active channel sheet, wherein the active channel sheet has a first lateral surface. The first dielectric layer is formed above the active structure and has a recess, wherein the recess is recessed with respect to the first lateral surface of the active channel sheet. The second dielectric layer is formed within the recess and has a dielectric constant, wherein the dielectric constant is less than 3.9.

Abstract: A circuit, for a touch panel, comprises a plurality of touch signal processing circuits, coupled to a plurality of sensors of the touch panel to receive a plurality of touch signals, wherein when a first sensor within the plurality of sensors is touched, the first sensor generates a first touch signal of the plurality of touch signals; and a controller, coupled to the plurality of touch signal processing circuits, configured to adjust the first touch signal according to the plurality of touch signals except the first touch signal.

Abstract: An imaging lens assembly module includes an imaging lens assembly and a variable aperture module. The imaging lens assembly has an optical axis. The variable aperture module includes a light blocking sheet set, a fixed element, a movable element, and an annular light blocking portion. The light blocking sheet set includes at least two light blocking sheets, wherein the at least two light blocking sheets are mutually stacked along a circumferential direction surrounding the optical axis to form a variable aperture opening. The fixed element has a sidewall structure. The annular light blocking portion surrounds the optical axis to form a fixed aperture opening.

Abstract: A semiconductor structure includes an array of active patterns, a peripheral pattern around the array of active patterns, and at least a branch pattern connected to an inner edge of the peripheral pattern. The active patterns respectively extend along a first direction and are arranged end-to-end along the first direction and side-by-side along a second direction that is different form the first direction. The branch pattern extends along the first direction. An end portion of the branch pattern and an end portion of one of the active patterns that is immediately side-by-side next to the branch pattern are flush along the second direction.

Abstract: A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.

Abstract: An apparatus and a method for neural network computation are provided. The apparatus for neural network computation includes a first neuron circuit and a second neuron circuit. The first neuron circuit is configured to execute a neural network computation of at least one computing layer with a fixed feature pattern in a neural network algorithm. The second neuron circuit is configured to execute the neural network computation of at least one computing layer with an unfixed feature pattern in the neural network algorithm. The performance of the first neuron circuit is greater than that of the second neuron circuit.

Abstract: A blockchain-based method for saving research data is implemented by a processing system. The processing system is connected to a blockchain system, and stores a user account associated with the blockchain system. The method includes sending a deployment request that includes the user account and an application to the blockchain system, in order for the blockchain system to deploy the application associated with the user account on the blockchain system. The method further includes generating and sending a processing request that includes a to-be-processed dataset to the blockchain system, in order for the blockchain system to analyze the to-be-processed dataset using the application so as to obtain a target dataset that corresponds to the to-be-processed dataset and that indicates an analysis result of the to-be-processed dataset, to store the to-be-processed dataset and the target dataset in the blockchain system, and to send the target dataset to the processing system.

Abstract: A data feature augmentation system and method for a low-precision neural network are provided. The data feature augmentation system includes a first time difference unit. The first time difference unit includes a first sample-and-hold circuit and a subtractor. The first sample-and-hold circuit is used for receiving an input signal and obtaining a first signal according to the input signal. The first signal is related to a first leakage rate of the first sample-and-hold circuit and the first signal is the signal generated by delaying the input signal by one time unit. The subtractor is used for performing subtraction on the input signal and the first signal to obtain a time difference signal. The input signal and the time difference signal are inputted to the low-precision neural network.

Abstract: An electronic device includes a casing, an antenna, and a connector. The casing includes a metal layer and a first slot and a second slot located on the metal layer. The metal layer includes a metal connecting segment, a first region, and a second region. The metal connecting segment is located between the first slot and the second slot, and the first region and the second region are separated by the first slot, the second slot, and the metal connecting segment. The antenna is connected to the first region, and the antenna is adapted to resonate at a frequency band. The connector is connected to the second region.

Abstract: A device includes: a substrate having a semiconductor fin; a stack of semiconductor channels on the substrate and positioned over the fin; a gate structure wrapping around the semiconductor channels; a source/drain abutting the semiconductor channels; an inner spacer positioned between the stack of semiconductor channels and the fin; an undoped semiconductor layer vertically adjacent the source/drain and laterally adjacent the fin; and an isolation structure that laterally surrounds the undoped semiconductor layer, the isolation structure being between the source/drain and the inner spacer.

Abstract: Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a first transistor. The first transistor includes a first gate structure wrapping around a plurality of first nanostructures disposed over a substrate, a first source/drain feature electrically coupled to a topmost nanostructure of the plurality of first nanostructures and isolated from a bottommost nanostructure of the plurality of first nanostructures by a first dielectric layer, and a first semiconductor layer disposed between the substrate and the first source/drain feature, wherein the first source/drain feature is in direct contact with a top surface of the first semiconductor layer.

Abstract: An LED driving apparatus, a microcontroller, and a control method for an LED module are provided. The LED driving apparatus includes a power supply module, a switch module, and a control module. The power supply module is configured to supply power to the LED module, in which the power supply module determines whether to trigger an overcurrent protection based on whether an output current exceeds a threshold current. The control module is configured to receive an overcurrent detection signal to control a conduction state of the switch module, so as to affect the current amount of the LED module. When the overcurrent detection signal indicates the output current exceeds the threshold current, the control module outputs a first control signal based on the overcurrent detection signal to control the switch module, to prevent the overcurrent protection from being triggered.

Abstract: A protection device includes a meltable conductor, an electrode set, and a heating element. The meltable conductor has a core metal layer and a bottom covering layer with low melting point. The core metal layer has a first low melting point metal layer, a second low melting point metal layer, and a high melting point metal layer laminated therebetween. The bottom covering layer with low melting point is disposed on a bottom surface of the core metal layer. The electrode set has a first electrode and a second electrode respectively connected to two terminals of the meltable conductor. The heating element is disposed under the bottom covering layer, thereby heating up and blowing the meltable conductor in the event of over-voltage.

Abstract: The present disclosure discloses a display apparatus having an on-screen display control mechanism. A signal receiving terminal receives a keyboard input signal. A signal transmission circuit receives the keyboard input signal by using an input terminal from the signal receiving terminal and transmits the keyboard input signal to a first output terminal and a second output terminal respectively in a keyboard signal transmission mode and a on-screen display control mode. The display control circuit controls a display panel to display a on-screen display including control items and an indicating object under the on-screen display control mode, receive the keyboard input signal from the second output terminal to retrieve key information and control the indicating object according to the key information to move among the control items to switch a selected control item indicated thereby or execute a control function of the selected control item.

Abstract: A semiconductor structure includes an isolation structure in a substrate, a metal gate structure over the substrate and a portion of the isolation structure, a spacer at sidewalls of the metal gate structure, epitaxial source/drain structure at two sides of the metal gate structure, and a protection layer over the isolation structure. The protection layer and the spacer include a same material.