Abstract: In a peeling system and a peeling method for a flexible fingerprint component provided by the present invention, the flexible fingerprint component is formed on a rigid substrate, and the flexible fingerprint component comprises a flexible substrate, a photosensitive device layer and an optical film sequentially arranged on the flexible substrate, a first chip-on film bonded to the photosensitive device layer on a first side of the optical film, and a second chip-on film bonded to the photosensitive device layer on a second side of the optical film, wherein the optical film is provided with an extension portion beyond the flexible substrate, the second side of the optical film is located on a side opposite to the extension portion, and the first side of the optical film is located on a side adjacent to the extension portion.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.

Abstract: An RRAM structure includes a dielectric layer. A bottom electrode, a resistive switching layer and a top electrode are disposed from bottom to top on the dielectric layer. A spacer is disposed at sidewalls of the bottom electrode, the resistive switching layer and the top electrode. The spacer includes an L-shaped spacer and a sail-shaped spacer. The L-shaped spacer contacts the sidewall of the bottom electrode, the sidewall of the resistive switching layer and the sidewall of the top electrode. The sail-shaped spacer is disposed on the L-shaped spacer. A metal line is disposed on the top electrode and contacts the top electrode and the spacer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first diffusion barrier layer made of a dielectric material including a metal element, nitrogen, and oxygen and a first protection layer made of a dielectric material including silicon and oxygen and in direct contact with the top surface of the first diffusion barrier layer. The semiconductor device structure also includes a first thickening layer made of a dielectric material including the metal element and oxygen and in direct contact with the top surface of the first protection layer. A maximum metal content in the first thickening layer is greater than that in the first diffusion barrier layer. The semiconductor device structure further includes a conductive feature surrounded by and in direct contact with the first diffusion barrier layer, the first protection layer, and the first thickening layer.

Abstract: A network management method and a related device are provided. The method includes: receiving first operation and maintenance service information and/or second operation and maintenance service information, determining a first correspondence between the first operation and maintenance service and the first network management device, and a second correspondence between the second operation and maintenance service and the second network management device; and receiving third operation and maintenance service information, and executing a third operation and maintenance service based on a correspondence between a network device and an operation and maintenance service. At least two network management devices collaborate to provide an operation and maintenance service for a user of an enterprise network.

Abstract: A surgical robot including at least one contact module, a control connection module, at least one first robotic arm, and at least one grip control device. A first transmission member of the control connection module drives the control module through a first transmission connecting member. A first shaft member of the first robotic arm is connected with the first transmission member while the grip control device is connected with the first robotic arm by a transmission interface. A force sensing member of the first robotic arm detects a first reaction force from the contact module so that the first robotic arm sends a feedback control signal to the grip control device to control a grip driving member to generate a force feedback for allowing a grip portion to move. Thereby, users can feel movement of the grip portion caused by the force feedback to avoid accidental iatrogenic injuries.

Abstract: Provided are a complex of an anti-IL-4R antibody or an antigen-binding fragment thereof, and a medical use thereof. Specifically, provided are a complex of an antibody that specifically binds to IL-4R or an antigen-binding fragment thereof covalently linked to a toxin, a pharmaceutical composition comprising the complex, and a use thereof in the preparation of a drug for treating IL-4R-mediated diseases or disorders, especially a use in the preparation of an anti-cancer drug.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A method for an authentication server function, AUSF, of a communication network is provided. The method comprises sending a second authentication request comprising a first identifier associated with a user equipment, UE, or a second identifier associated with the UE, receiving a response to the second authentication request, and when the response comprises an 5 authentication and key management for applications, AKMA, indicator: determining a first security key identifier based on a first field comprised in the response.

Abstract: A robotic bronchoscopy navigation method, performed by a processing control device, includes: performing a navigation procedure according to obtained navigation image, the navigation procedure including: determining whether the navigation image has a node, if the navigation image does not have the node, controlling a bending part of a robotic bronchoscopy to move toward an image center of the navigation image, if the navigation image has the node, calculating a distance between the bronchoscopy and the node, controlling the bending part to move according to a default branch when the distance is smaller than a threshold of distance, and determining whether the default branch is a destination branch where a destination is located, if the default branch is not the destination branch, obtaining another navigation image, and performing the navigation procedure on the another navigation image, and if the default branch is the destination branch, outputting a notification.

Abstract: Multiphase flowmeter aperture antenna transmission and pressure retention are disclosed herein. An example apparatus includes at least one radiating element to transmit or receive an electromagnetic signal along a measurement plane orthogonal to a direction of flow of the fluid in the vessel; a pressure retaining member to prevent fluid from entering the aperture antenna assembly through a measurement window of the aperture antenna assembly, at least a portion of the pressure retaining member to separate the radiating element and the fluid; and a metal housing with or without slits, the pressure retaining member to be at least partially within the metal housing, the radiating element to be coupled to the metal housing.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor fin over a substrate and multiple semiconductor nanostructures suspended over the semiconductor fin. The semiconductor device structure also includes a gate stack extending across the semiconductor fin, and the gate stack wraps around each of the semiconductor nanostructures. The semiconductor device structure further includes a first epitaxial structure and a second epitaxial structure sandwiching the semiconductor nanostructures. In addition, the semiconductor device structure includes an isolation structure between the semiconductor fin and the gate stack. The isolation structure extends exceeding opposite sidewalls of the first epitaxial structure.

Abstract: Disclosed herein are related to an integrated circuit including a semiconductor layer. In one aspect, the semiconductor layer includes a first region, a second region, and a third region. The first region may include a circuit array, and the second region may include a set of interface circuits to operate the circuit array. A side of the first region may face a first side of the second region along a first direction. The third region may include a set of header circuits to provide power to the set of interface circuits through metal rails extending along a second direction. A side of the third region may face a second side of the second region along the second direction. In one aspect, the first side extending along the second direction is shorter than the second side extending along the first direction, and the metal rails are shorter than the first side.

Abstract: An exemplary two-step method for power system inertia online estimation is described. The first step is to accurately estimate the POI-level aggregated inertia. The second step is to calculate the system-level inertia constant by weighting all the POI-level aggregated inertia and to monitor the inertia spatial distribution. In one example embodiment, the PMU is installed at POI, the frequency spatial difference is considered, and the mechanical power is carefully treated.

Abstract: A slide rail assembly is provided and includes a first rail, a second rail movable with respect to the first rail, a working member, an operating member and a blocking member. When the second rail is located at an extended position with respect to the first rail and the working member is in a first state, the working member and a blocking feature of the first rail block each other for restraining the second rail from moving toward a first predetermined direction from the extended position. The blocking member is switchable between a blocking state and a non-blocking state for restraining the operating member from driving the working member to disengage from the first state or for allowing the operating member to drive the working member from the first state to a second state. Besides, a related slide rail kit is also provided.

Abstract: A semiconductor device includes a substrate, a shallow trench isolation structure, two epitaxial structures, one or more semiconductor channel layers, a gate metal layer and a gate spacer. The shallow trench isolation structure is disposed over the substrate. The epitaxial structures are disposed over the shallow trench isolation structure. The one or more semiconductor channel layers connect the two epitaxial structures. The gate metal layer is located between the epitaxial structures and engages the one or more semiconductor channel layers. The gate spacer is in contact with a sidewall of the gate metal layer. From a cross-section view, a neck portion of the gate metal layer adjacent to and along the one or more semiconductor channel layers, and one side of the neck portion is retracted by a distance relative to the gate spacer, and the distance is greater than 0 and less than or equal to 2 nanometers.

Abstract: A slide rail assembly includes a first rail, a second rail, a slide assisting device, an elastic member and a working member. The second rail and the first rail are movable relative to each other. The elastic member is arranged on the second rail. During a process of the second rail being moved relative to the first rail along an opening direction, the working member is configured to contact the elastic member in an initial state in order to drive the slide assisting device to move along the opening direction to a predetermined position. When the slide assisting device is located at the predetermined position, the elastic member releases an elastic force through a predetermined space of the first rail, such that the elastic member is no longer in the initial state with the working member no longer contacting the elastic member.

Abstract: A semiconductor device includes a first die having a first bonding layer; a second die having a second bonding layer disposed over and bonded to the first bonding layer; a plurality of bonding members, wherein each of the plurality of bonding members extends within the first bonding layer and the second bonding layer, wherein the plurality of bonding members includes a connecting member electrically connected to a first conductive pattern in the first die and a second conductive pattern in the second die, and a dummy member electrically isolated from the first conductive pattern and the second conductive pattern; and an inductor disposed within the first bonding layer and the second bonding layer. A method of manufacturing a semiconductor device includes bonding a first inductive coil of a first die to a second inductive coil of a second die to form an inductor.

Abstract: An optical sensor array substrate and an optical fingerprint reader are provided. The optical sensor array substrate includes a substrate including a detection area which includes a plurality of photosensitive pixels. Photosensitive pixel includes: a TFT arranged on the substrate; a storage capacitor arranged on the substrate and having a first capacitor plate, and a second capacitor plate electrically connected to the source or drain of the TFT; a photosensitive element, having one end electrically connected to the second capacitor plate; a first electrode layer electrically connected to another end of the photosensitive element. On the substrate, an orthographic projection of the second capacitor plate at least partially overlaps with that of the first electrode layer, and the first capacitor plate is located in the same layer and has the same material as the gate of the TFT.