Abstract: A method for preventing bubble formation over source/drain active areas in p-channel MOSFETs is described. Bubble formation occurs when the source/drain areas and silicon containing gate electrodes are implanted with BF.sub.2.sup.+ molecule ions following an anisotropic LDD spacer etch using a plasma. It is found that the plasma causes the silicon surface to become prone to adsorption of BF.sub.2.sup.+ molecule ions during the source/drain/gate implantation. These adsorbed species are released and form bubbles during reflow of a subsequently deposited glass layer. The invention performs the spacer etch only partially with the anisotropic plasma and completes the spacer formation with a wet etch. The active silicon and gate electrode surfaces are thus not damaged by the plasma. Consequently adsorption of BF.sub.2.sup.+ molecule ions is inhibited and bubble formation does not occur during reflow.

Abstract: A process is provided in which silicon thin film transistors fabricated with polycrystalline silicon, silicon oxide, and silicon conductive layers are exposed to microwave plasmas containing water vapor and to subsequent annealing steps to bring about an improvement in the ratio of device drain current in the conductive state to that in the non-conductive state, and a lower device subthreshold voltage swing.

Abstract: A new method of metallization without unwanted precipitates using a tungsten plug is achieved. Semiconductor device structures are formed in and on a semiconductor substrate. A contact hole is opened through an insulating layer to the semiconductor substrate. A glue layer is deposited conformally over the surface of the insulating layer and within the contact opening. A layer of tungsten is blanket deposited over the glue layer. The tungsten layer is etched back leaving the tungsten only within the contact opening to form a tungsten plug. The etching back leaves impurities on the surface of the glue layer. Those impurities will react with water or air to form precipitates. The precipitates are removed using a wet chemical etch. The substrate is post treated with argon ion sputtering to prevent future formation of precipitates.

Abstract: A catalyst composition for use in the preparation of poly(butylene terephthalate) from dimethyl terephthalate, comprising: (a) a titanium compound primary catalyst, from about 0.0005 PHR to about 5 PHR; (b) a first co-catalyst containing at least one of Zn, Co, Mn, Mg, Ca, or Pb series compounds, between about 0.0001 PHR and 5 PHR; and (c) a second co-catalyst containing an alkali metal phosphate, an alkali metal phosphite, an alkali hypophosphite, or an alkali metal polyphosphate between about 0.0001 PHR and 5 PHR; wherein PHR represents parts of the primary catalyst or the co-catalyst per one hundred parts, by weight, of dimethyl terephthalate. Preferred titanium compounds include tetrabutyl titanate or tetra(isopropyl)titanate. Preferred metal compounds for use as first co-catalyst are metal acetates. The alkali metal phosphate can be a phosphate salt containing one, two, or three metal groups; and the alkali metal phosphite can be a phosphite salt containing one or two metal groups.

Abstract: A sound generating toy adapted to emit a sound when the lower jaw is opened is described. The device includes an upper pressure plate which at its front portion mounts a head structure having a mouth and a lower pressure plate which has a front portion rotatably mounted on the upper plate and forming a lower jaw for the mouth structure. A sound emitting rubber sack is disposed between the two plates. When the plates are squeezed together, the lower jaw opens and a sound is emitted from the sack. When the pressure plates are released, the sack refills with air returning them to their original spaced apart relationship and closing the lower jaw against the mouth.