Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: An indoor positioning method based on image visual features is disclosed. A Wi-Fi signal strength value of a Wi-Fi tag is matched with a signal strength list to obtain a first location of a first Wi-Fi tag with the greatest matching degree. A SURF descriptor of an image of the Wi-Fi tag is matched with SURF descriptors recorded in the signal strength list to discover an image of a Wi-Fi tag with the greatest matching degree, thereby obtaining a second location of a second Wi-Fi tag corresponding to the image of the Wi-Fi tag with the greatest matching degree. A three location of a three Wi-Fi tag is obtained according to a homography matrix corresponding to the image of the Wi-Fi tag with the largest matching degree. Positioning information of the mobile device is obtained according to the first location, the second location and the third location.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A catadioptric optical membrane, which is disposed on a surface of a substrate, includes a reflection membrane and a matting membrane. The reflection membrane is disposed on an effective optical path area of the substrate and includes a reflection metal membrane and a reflection oxidation membrane. The reflection oxidation membrane includes a first reflection oxidation membrane and a second reflection oxidation membrane. The reflection metal membrane is farther away from the substrate than the first reflection oxidation membrane. The second reflection oxidation membrane is farther away from the substrate than the reflection metal membrane. The matting membrane is disposed on a non-effective optical path area of the substrate. The matting membrane includes a deep-color membrane and a first anti-reflection membrane. The deep-color membrane includes a deep-color metal membrane and a deep-color oxidation membrane. The deep-color membrane is farther away from the substrate than the first anti-reflection membrane.

Abstract: A package structure includes a first RDL, an adhesive layer and a first electronic component. Upper bumps and conductive pads are provided on a first upper surface and a first lower surface of the first RDL, respectively. The adhesive layer is located on the first upper surface of the first RDL and surrounds the upper bumps. The first electronic component is mounted on the adhesive layer and includes conductors which are visible from an active surface of the first electronic component and joined to the upper bumps, the active surface of the first electronic component faces toward the first upper surface of the first RDL. Two adhesive surfaces of the adhesive layer are adhered to the first upper surface of the first RDL and the active surface of the first electronic component, respectively.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.

Abstract: An indoor positioning method based on image visual features is disclosed. A Wi-Fi signal strength value of a Wi-Fi tag is matched with a signal strength list to obtain a first location of a first Wi-Fi tag with the greatest matching degree. A SURF descriptor of an image of the Wi-Fi tag is matched with SURF descriptors recorded in the signal strength list to discover an image of a Wi-Fi tag with the greatest matching degree, thereby obtaining a second location of a second Wi-Fi tag corresponding to the image of the Wi-Fi tag with the greatest matching degree. A three location of a three Wi-Fi tag is obtained according to a homography matrix corresponding to the image of the Wi-Fi tag with the largest matching degree. Positioning information of the mobile device is obtained according to the first location, the second location and the third location.

Abstract: An indoor positioning method based on image visual features. A Wi-Fi signal strength value of a Wi-Fi tag closest to a current location of a mobile device is matched with a signal strength list in a map database to obtain a first location of a first Wi-Fi tag with the greatest matching degree. A SURF descriptor of an image of the Wi-Fi tag closest to the current location of the mobile device is matched with SURF descriptors recorded in the signal strength list in the map database to discover an image of a Wi-Fi tag with the greatest matching degree, thereby obtaining a second location of a second Wi-Fi tag corresponding to the image of the Wi-Fi tag with the greatest matching degree. A three location of a three Wi-Fi tag is obtained according to a homography matrix corresponding to the image of the Wi-Fi tag with the largest matching degree and an empirical value of a positioning error.

Abstract: An embedded system and a vibration driving method are provided. The embedded system includes a vibration module, a Bluetooth module, a storage module, and a microcontroller unit. The vibration module includes a plurality of actuators. The Bluetooth module is configured to receive a Bluetooth signal provided by an external device. The storage module is configured to store a vibration type database. The microcontroller unit is coupled to the vibration module, the Bluetooth module, and the storage module. The microcontroller unit generates vibration type data according to the Bluetooth signal and the vibration type database. The microcontroller unit drives at least one of the plurality of actuators according to the vibration type data.

Abstract: A method for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.

Abstract: An indoor positioning method based on image visual features. A Wi-Fi signal strength value of a Wi-Fi tag closest to a current location of a mobile device is matched with a signal strength list in a map database to obtain a first location of a first Wi-Fi tag with the greatest matching degree. A SURF descriptor of an image of the Wi-Fi tag closest to the current location of the mobile device is matched with SURF descriptors recorded in the signal strength list in the map database to discover an image of a Wi-Fi tag with the greatest matching degree, thereby obtaining a second location of a second Wi-Fi tag corresponding to the image of the Wi-Fi tag with the greatest matching degree. A three location of a three Wi-Fi tag is obtained according to a homography matrix corresponding to the image of the Wi-Fi tag with the largest matching degree and an empirical value of a positioning error.

Abstract: This present invention provides a microporous carbon nanospheres, method for synthesizing and activating thereof, the method comprising: adding and mixing well deionized water, absolute ethanol, triblock copolymer, ammonia solution, resorcinol and formaldehyde solution; separating solid and liquid of the mixture solution, then drying the separated solid substrate to have a dried solid substrate; sintering the dried solid substrate surrounding by nitrogen twice and collecting microporous carbon nanospheres after cooling down. Further sintering to activate these microporous carbon nanospheres surrounding by carbon dioxide, and collecting activated microporous carbon nanospheres after cooling down. Microporous carbon nanospheres and activated microporous carbon nanospheres synthesized by this present invention have spherical structure, small size and high the specific surface area, and the process is simplified, cost-effective and environment-friendly.

Abstract: A method for preventing denial of service attacks which are distributed attacks is applied in a target service provider server, a platform server, and a botnet service provider server. The target service provider server determines a first SDN controller according to an attack protection request, and issues a first flow rule. The target service provider server directs data flow of a network equipment to a first cleaning center and controls the first cleaning center to identify the attacking or malicious element in the data flow according to the first flow rule. The platform server receives the attacking element in the data flow sent by the target service provider server, and regards the same as malicious traffic. The platform server generates an attack report, and sends the attack report to the botnet service provider server to notify the botnet service provider server to clean or filter out the malicious traffic.

Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.