Abstract: A network service allocating system for a software defined network (SDN) includes an SDN controller, a plurality of SDN switches, a cloud server, and a local server. The SDN controller includes modules for service managing and path managing. Each SDN switch can receive a packet from a client and send the packet to the SDN controller. The service managing module analyzes the packet to identify type of service required and allocates the network service to the cloud server or to the local server according to the type of service required. The path managing module plans an optimum transmission path and sends the path to the SDN controller. Thereby, the SDN switch can obtain the network service. An SDN controller and a network service allocating method are also provided.

Abstract: A driving module, being electrically connected to a control module and for driving a light emitting device with at least one light emitting element, is provided. The driving module has a driving circuit, which receives a control signal from the control module and transmits a drive current signal and a test current signal to the at least one light emitting element, so as to drive the least one light emitting element. A value of the drive current signal is expressed as If. A value of the test current signal is expressed as It. A relationship between the value of the drive current signal and the value of the test current signal satisfies the following equation (1), (It/If)=0.1%˜35% . . . (1), the driving circuit generates a feedback signal based on a status of the least one light emitting element. A light source system having the driving module is provided.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.

Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).

Abstract: A semiconductor structure includes a substrate, a dielectric layer, a metal layer, and a tungsten layer. The dielectric layer is on the substrate and has a recess feature therein. The metal layer is in the recess feature. The metal layer has an oxygen content less than about 0.1 atomic percent. The tungsten layer is in the recess feature and in contact with the metal layer.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.

Abstract: A semiconductor structure and the method of forming the same are provided. The method of forming a semiconductor structure includes forming a recess feature in a basal layer, forming a metal layer on the basal layer, exposing the metal layer to a tungsten halide gas to form an oxygen-deficient metal layer, and forming a bulk tungsten layer on the oxygen-deficient metal layer.

Abstract: A semiconductor structure and the method of forming the same are provided. The method of forming a semiconductor structure includes forming a recess feature in a basal layer, forming a metal layer on the basal layer, exposing the metal layer to a tungsten halide gas to form an oxygen-deficient metal layer, and forming a bulk tungsten layer on the oxygen-deficient metal layer.

Abstract: A driving system and a driving method for a planar organic electroluminescent device are provided. The light emitting device has multiple light emitting elements, each having a first electrode and a second electrode. The driving system includes a first circuit, a second circuit, a driving module, and a ground circuit. The first circuit is connected to and provides a constant voltage to the first electrode of each light emitting element. The second circuit is connected to the second electrode of each light emitting element. The driving module is respectively connected to the second electrode of each light emitting element through the second circuit. The ground circuit is connected to the driving module and connects each light emitting element to the ground. The first electrodes of the light emitting elements are connected to one another, and the light emitting elements are driven by a constant current output by the driving module.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.

Abstract: An organic light-emitting diode (OLED) apparatus includes at least one OLED illumination module, a driving unit, an optical sensing module, a control unit, and a storage unit. The driving unit is configured to adjust voltage applied to the OLED illumination module, so as to change a CCT of the OLED illumination module. The optical sensing module is configured to sense the light emitted by the OLED illumination module. The control unit is configured to receive a feedback signal from the optical sensing module so as to adjust a light intensity and the CCT of the OLED illumination module. The storage unit is configured to store photoelectric parameter data of the OLED illumination module. The control unit is configured to adjust the CCT and the light intensity of the OLED illumination module to target values according to the photoelectric parameter data.

Abstract: The present invention provides a method for activating the AMP-dependent protein kinase (AMPK) in a subject comprising administering the subject with a pharmaceutical composition comprising a pharmaceutically acceptable carrier and a therapeutically effective amount of a compound having the general Formula I, preferably salsolinol or reticuline. The pharmaceutical composition is able to activate AMPK, and thus is effective in the regulation of cell growth and metabolism, and the treatment of AMPK associated diseases.

Abstract: A key switch is disclosed. The key switch includes an axis, a pressure sensor layer, an axis component, and a key cap. The axis support includes a first opening. The pressure sensor layer is made of a pressure-sensitive electronic material and disposed on an upper surface of the axis support. The axis component is disposed in the first opening and vertically movable with respect to the axis support and the pressure sensor layer. The keycap is mounted on the axis component and includes a lower surface facing the upper surface of the axis support. When the keycap is depressed, the lower surface of the keycap depresses the pressure sensor layer and an electronic property of the pressure sensor layer varies. An analog pressure detection system including the key switch is also disclosed.

Abstract: A stirring and feeding device includes a base seat having a stirring reservoir and a feeding port for engaging a feeding tube, a hopper defining a filling space which is disposed upstream of the stirring reservoir, a rotatable stirring unit extending in the filling space and having a spirally extending blade for guiding the stuffing downwardly to the stirring reservoir, and two rollers defining a rolling space below the blade to roll the stuffing toward the feeding port for preventing clogging.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).

Abstract: A key switch is disclosed. The key switch includes an axis, a pressure sensor layer, an axis component, and a key cap. The axis support includes a first opening. The pressure sensor layer is made of a pressure-sensitive electronic material and disposed on an upper surface of the axis support. The axis component is disposed in the first opening and vertically movable with respect to the axis support and the pressure sensor layer. The keycap is mounted on the axis component and includes a lower surface facing the upper surface of the axis support. When the keycap is depressed, the lower surface of the keycap depresses the pressure sensor layer and an electronic property of the pressure sensor layer varies. An analog pressure detection system including the key switch is also disclosed.