Patents by Inventor Cheng Zhong

Cheng Zhong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090174453
    Abstract: A circuit device includes a first input to receive a reset control signal and a second input coupled to an output of a latch. The circuit device also includes a logic circuit adapted to conditionally reset the latch based on a state of the output in response to receiving the reset control signal.
    Type: Application
    Filed: January 9, 2008
    Publication date: July 9, 2009
    Applicant: QUALCOMM INCORPORATED
    Inventors: Hari Rao, Cheng Zhong, Zhiqin Chen
  • Publication number: 20090161413
    Abstract: In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a second bit line associated with the second memory cell. The memory device also includes a source line coupled to the first memory cell and coupled to the second memory cell.
    Type: Application
    Filed: December 19, 2007
    Publication date: June 25, 2009
    Applicant: QUALCOMM INCORPORATED
    Inventors: Sei Seung Yoon, Cheng Zhong, Dongkyu Park, Mohamed H. Abu-Rahma
  • Patent number: 7530881
    Abstract: The present invention relates to an eccentric stroke adjusting mechanism for use in a power tool with a principle drive shaft comprising a first and a second eccentric member mounted on the principle drive shaft respectively and a coupling member for connecting the first and the second eccentric member. The principle drive shaft has a central axis. The first eccentric member has a first central axis and the second eccentric member has a second central axis. The eccentric stroke of the first central axis and the second central axis with respect to a central axis of the principle drive shaft is adjustable. The eccentric stroke adjusting mechanism of the invention is reliable and the adjusted eccentricity is non-displaceable. The eccentric stroke adjusting mechanism can be applied to adjust the eccentric stroke of single disk or multiple (e.g., double) disks.
    Type: Grant
    Filed: February 2, 2006
    Date of Patent: May 12, 2009
    Assignee: Positec Power Tools (Suzhou) Co., Ltd.
    Inventor: Chen Cheng Zhong
  • Patent number: 7092307
    Abstract: A CMOS integrated circuit (e.g., an SRAM or a DRAM) is partitioned into a core block, a peripheral block, and a retention block. The core block includes circuits (e.g., memory cells) that are powered on at all times and is coupled directly to power supply and circuit ground. The peripheral block includes circuits that may be powered on or off and are coupled to the power supply via a head switch and/or to circuit ground via a foot switch. The switches and the core block may be implemented with high threshold voltage (high-Vt) FET devices to reduce leakage current. The peripheral block may be implemented with low-Vt FET devices for high-speed operation. The retention block includes circuits (e.g., pull-up devices) that maintain signal lines (e.g., word lines) at a predetermined level so that the internal states of the core block are retained when the peripheral block is powered off.
    Type: Grant
    Filed: August 14, 2003
    Date of Patent: August 15, 2006
    Assignee: Qualcomm Inc.
    Inventors: Nan Chen, Cheng Zhong, Mehdi Hamidi Sani
  • Patent number: 6950359
    Abstract: Techniques for replacing and eliminating paths causing channel leakage current. In one embodiment, one or more precharge enable transistors and a precharge enable signal are added to a circuit configuration. The precharge enable transistors are designed to remain on and simply pass a signal in a properly functioning path. When a leakage path is identified, such as during IDDQ testing, the precharge enable signal is set to turn off the precharge enable transistors. When the precharge enable transistors are off, the leakage path is disrupted, and the leakage current stopped. The path may be replaced with a redundant path.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: September 27, 2005
    Assignee: Qualcomm Inc.
    Inventors: Nan Chen, Cheng Zhong, Mehdi Hamidi Sani
  • Publication number: 20050073893
    Abstract: Techniques for replacing and eliminating paths causing channel leakage current. In one embodiment, one or more precharge enable transistors and a precharge enable signal are added to a circuit configuration. The precharge enable transistors are designed to remain on and simply pass a signal in a properly functioning path. When a leakage path is identified, such as during IDDQ testing, the precharge enable signal is set to turn off the precharge enable transistors. When the precharge enable transistors are off, the leakage path is disrupted, and the leakage current stopped. The path may be replaced with a redundant path.
    Type: Application
    Filed: March 28, 2003
    Publication date: April 7, 2005
    Inventors: Nan Chen, Cheng Zhong, Mehdi Sani
  • Publication number: 20040196724
    Abstract: A CMOS integrated circuit (e.g., an SRAM or a DRAM) is partitioned into a core block, a peripheral block, and a retention block. The core block includes circuits (e.g., memory cells) that are powered on at all times and is coupled directly to power supply and circuit ground. The peripheral block includes circuits that may be powered on or off and are coupled to the power supply via a head switch and/or to circuit ground via a foot switch. The switches and the core block may be implemented with high threshold voltage (high-Vt) FET devices to reduce leakage current. The peripheral block may be implemented with low-Vt FET devices for high-speed operation. The retention block includes circuits (e.g., pull-up devices) that maintain signal lines (e.g., word lines) at a predetermined level so that the internal states of the core block are retained when the peripheral block is powered off.
    Type: Application
    Filed: August 14, 2003
    Publication date: October 7, 2004
    Inventors: Nan Chen, Cheng Zhong, Mehdi Hamidi Sani