Abstract: An image sensor includes a first sensing unit. The first sensing unit includes a pair of photodiodes formed in a substrate and spaced by a deep trench isolation structure, an outer grid over the pair of photodiodes, a color filter filled in the outer grid, and an inner grid disposed in the color filter. The color filter overlaps the pair of photodiodes. The inner grid includes a first spacer, wherein the first spacer is rotated relative to the deep trench isolation structure.

Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

Abstract: This disclosure provides photosensitive probes useful for photoactivated and tagging of subsets of biomolecules. These photosensitive probes described herein may be especially useful for selectively tagging and proximity labeling of biomolecules via selective light illumination through a microscope system. The methods and compositions may be particularly useful for analyzing biological samples, such as identifying proximal biomolecules in cell or tissue samples.

Abstract: An optical lens assembly includes, in order from an object side to an image side: a stop, a first lens, a second lens, a third lens, a fourth lens, and fifth lens, wherein an Abbe number of the second lens is vd2, an Abbe number of the third lens is vd3, a central thickness of the second lens along the optical axis is CT2, a central thickness of the third lens along the optical axis is CT3, the aperture number of the optical lens assembly is Fno, an incident angle of a main light incident at the position of 60% of the maximum image height of the optical lens assembly is CRA6, and the following conditions are satisfied: 3.54<(vd3*CT3?vd2*CT2)/Fno<8.18 and 28.25<CRA6<35.76.

Abstract: An electronic device includes: a first substrate; a second substrate, disposed opposite to the first substrate; an insulating layer, disposed on a surface of the first substrate away from the second substrate; and a metal layer, disposed on a surface of the second substrate away from the first substrate, wherein a width of the insulating layer is different from a width of the metal layer.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference signals. A transmitter transmits an output command and address signal to a memory device according to the reference signals. A signal training circuit executes a training process in a training mode that includes steps outlined below. A training signal is generated such that the training signal is transmitted as the output command and address signal. The training signal and the data signal generated by the memory device are compared to generate a comparison result indicating whether the data signal matches the training signal. The comparison result is stored. The clock generation circuit is controlled to modify a phase of at least one of the reference signals to be one of a plurality of under-test phases to execute a new loop of the training process until all the under-test phases are trained.

Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference clock signals. Each of access signal transmission circuits each includes a duty cycle adjusting circuit, a duty cycle detection circuit, a frequency division circuit and an asynchronous first-in-first-out circuit. The duty cycle adjusting circuit performs duty cycle adjustment on one of the reference clock signals according to a duty cycle detection signal to generate an output clock signal having a duty cycle. The duty cycle detection circuit detects a variation of the duty cycle to generate the duty cycle detection signal. The frequency division circuit divides a frequency of the output clock signal to generate a read clock signal. The asynchronous first-in-first-out circuit receives an access signal from a memory access controller and outputs an output access signal according to the read clock signal to access the memory device accordingly.

Abstract: An information processing method of the present disclosure includes: via one or more computer processors, receiving data relating to live sales performed by a livestreamer via live video streaming; inputting the data into a machine learning model; and based on a result generated by the machine learning model, obtaining promotional information that is useful for the livestreamer to perform the live sales.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An image sensor includes a group of sensor units and a color filter layer disposed within the group of sensor units. The image sensor further includes a dielectric structure and a plurality of polarization splitters disposed corresponding to the color filter layer. Each of the plurality of polarization splitters has a first meta element extending in a first direction from top view and a second meta element extending in a second direction from top view. The second direction is perpendicular to the first direction.

Abstract: A cholesteric liquid crystal display device includes a first substrate, a second substrate, a third substrate, a first cholesteric liquid crystal layer, a second cholesteric liquid crystal layer, a first common electrode pattern layer, a second common electrode pattern layer, and a first TFT circuit pattern layer and the second TFT circuit pattern layer. The first cholesteric liquid crystal layer is disposed between the first substrate and the second substrate. The second cholesteric liquid crystal layer is disposed between the second substrate and the third substrate. The first common electrode pattern layer is disposed on the first substrate. The second common electrode pattern layer is disposed on the third substrate. The first TFT circuit pattern layer and the second TFT circuit pattern layer are respectively disposed on two opposite surfaces of the second substrate. The first TFT circuit pattern layer and the second TFT circuit pattern layer are arranged correspondingly.

Abstract: A photolithography method includes dispensing a first liquid toward a target layer through a nozzle at a first distance from the target layer; moving the nozzle such that the nozzle is at a second distance from the target layer, wherein the second distance is different from the first distance; dispensing a second liquid toward the target layer through the nozzle at the second distance from the target layer; and patterning the target layer after dispensing the first liquid and the second liquid.

Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: The present invention relates to a cholesteric liquid crystal display, a liquid crystal driving unit, and a driving method for reducing the maximum driving voltage. The cholesteric liquid crystal display comprises a cholesteric liquid crystal display panel, a temperature detecting device, and a liquid crystal driving unit. If the temperature detecting device detects a temperature below the optimal range for the cholesteric liquid crystal display panel, the liquid crystal driving unit will operate the cholesteric liquid crystal display panel in DDS timing mode. When the temperature detecting device detects that the temperature of the display panel exceeds the optimal temperature range, the liquid crystal driving unit will operate the display panel in PWM timing mode, which can solve the problem of increased power consumption caused by changes in ambient temperature, and can greatly improve the better color level.

Abstract: Manufacturing of a shoe is enhanced by creating 3-D models of shoe parts. For example, a laser beam may be projected onto a shoe-part surface, such that a projected laser line appears on the shoe part. An image of the projected laser line may be analyzed to determine coordinate information, which may be converted into geometric coordinate values usable to create a 3-D model of the shoe part. Once a 3-D model is known and is converted to a coordinate system recognized by shoe-manufacturing tools, certain manufacturing steps may be automated.

Abstract: A method, a system, an apparatus, and a computer program product for determining a location of a wireless device. One or more second wireless devices in a plurality of second wireless devices are configured for processing one or more communications exchanged with a first wireless device in a plurality of first wireless devices to determine a location of the first wireless device in an environment. One or more communications are processed using one or more second wireless devices. The location of the first wireless device in the environment is determined based on the processed one or more communications.

Abstract: Manufacturing of a shoe or a portion of a shoe is enhanced by executing various shoe-manufacturing processes in an automated fashion. For example, information describing a shoe part may be determined, such as an identification, an orientation, a color, a surface topography, an alignment, a size, etc. Based on the information describing the shoe part, automated shoe-manufacturing apparatuses may be instructed to apply various shoe-manufacturing processes to the shoe part, such as a pickup and placement of the shoe part with a pickup tool.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate strip disposed over the substrate. The gate strip includes a high-k layer disposed over the substrate, an N-type work function metal layer disposed over the high-k layer, and a barrier layer disposed over the N-type work function metal layer. The barrier layer includes at least one first film containing TiAlN, TaAlN or AlN.