Abstract: A capacitor is disclosed that includes a first metal layer and a seed layer on the first metal layer. The seed layer includes a polar phase crystalline structure. The capacitor also includes a ferroelectric layer on the seed layer and a second metal layer on the ferroelectric layer.

Abstract: A cholesteric liquid crystal composite display device includes a cholesteric liquid crystal reflective display device and a transmissive display device. The transmissive display device is located below the cholesteric liquid crystal reflective display device. When the cholesteric liquid crystal reflective display device is displayed in a transparent state, the light transmittance of the cholesteric liquid crystal reflective display device is higher than that of the cholesteric liquid crystal reflective display device when it is displayed in a dark state through a rated driving mode. Thereby, the display of the cholesteric liquid crystal composite display device is made clearer and the display quality is improved.

Abstract: A cable-gland system provides a sealing function to openings in an electronic chassis that receive cables. The cable-gland system comprises a plurality of individual cable glands. Each of the plurality of individual cable glands includes an exterior end to be positioned adjacent an exterior of the chassis, and an interior end for positioning within the chassis. Each of the plurality of individual cable glands includes a through-hole extending between the exterior and interior ends for receiving one of the cables, and an outer surface between the exterior and interior ends. Each of the plurality of individual cable glands has a male projection on one side of the outer surface and a female recess on an opposing side of the outer surface. The cable glands are connectable to form the cable-gland system by mating the male projection on one cable gland with the female recess of an adjacent cable gland.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure.

Abstract: An optical lens assembly includes, in order from the object side to the image side: a stop, a first lens, a second lens, a third lens, and an IR band-pass filter, wherein half of a maximum view angle (field of view) of the optical lens assembly is HFOV, a radius of curvature of an image-side surface of the third lens is R6, a focal length of the optical lens assembly is f, and following condition is satisfied: ?6.83<HFOV/(R6/f)<44.10, which is favorable to the thinning and large field of view of the lens assembly.

Abstract: A cell culture device includes a culture unit, a gas supply unit, a first pressure unit, at least one inspecting unit and a control unit. The culture unit contains a cell culture liquid. The gas supply unit, connected with the culture unit, is used for transmitting a culture gas into the culture unit. The first pressure unit, connected with the culture unit, is used for applying a pressure to the cell culture liquid in the culture unit. The at least one inspecting unit, connected with the culture unit, is used for receiving the cell culture liquid for inspection. The control unit, electrically coupled with the culture unit, the first pressure unit, the gas supply unit and the at least one inspecting unit, is used for monitoring corresponding condition parameters to determine respective operations. In addition, a cell culture method for the cell culture device is also provided.

Abstract: The present disclosure provides a semiconductor device, including a first semiconductor structure and a second semiconductor structure. Each of the first semiconductor structure and the second semiconductor structure includes a substrate; a through silicon via, penetrating the substrate; and a deep trench capacitor, disposed in the substrate, separated from the TSV by a distance. The deep trench capacitor includes a stack, including a dielectric layer between a pair of conductive layers in a trench; and an insulating layer, covering the stack and the trench. The insulating layer surround a plurality of voids in the trench.

Abstract: Manufacturing of a shoe is enhanced by creating 3-D models of shoe parts. For example, a laser beam may be projected onto a shoe-part surface, such that a projected laser line appears on the shoe part. An image of the projected laser line may be analyzed to determine coordinate information, which may be converted into geometric coordinate values usable to create a 3-D model of the shoe part. Once a 3-D model is known and is converted to a coordinate system recognized by shoe-manufacturing tools, certain manufacturing steps may be automated.

Abstract: A portable computer includes a computer body and a handle. The handle, operable to be located at a closed position and an open position relative to the computer body, includes a body component for holding of a user, a movable member and an auxiliary member. One end of the movable member is pivotally connected to the body component and the other end is pivotally connected to the computer body. The auxiliary component is disposed on one end of the body component, and is abutted against one side of the movable member. During a movement process of the handle between the closed position and the open position, at least a portion of the movable member is kept in contact with the auxiliary member. When the handle is at the closed position and the open position, the auxiliary member and the body component jointly secure the movable member.

Abstract: An image capturing unit includes an imaging element and a dual-shot injection-molded optical folding element that are adjacent to each other. The imaging element is configured for an imaging light to pass through. The dual-shot injection-molded optical folding element includes a first part and a second part. The first part is made of transparent material. The first part has a reflective surface configured to reflect the imaging light. The second part is made of opaque material, and the second part is fixed at periphery of the first part. The second part includes a supporting portion configured to support the dual-shot injection-molded optical folding element. The supporting portion maintains the dual-shot injection-molded optical folding element at a predetermined position corresponding to the imaging element through mechanism assembly.

Abstract: A method of forming a semiconductor device includes the following operations. A substrate is provided with a device and an insulating layer disposed over the device. A silicon-containing heterocyclic compound precursor and a first oxygen-containing compound precursor are introduced to the substrate, so as to form a zeroth dielectric layer on the insulating layer. A zeroth metal layer is formed in the zeroth dielectric layer. A silicon-containing linear compound precursor and a second oxygen-containing compound precursor are introduced to the substrate to form a first dielectric layer on the zeroth dielectric layer. A first metal layer is formed in the first dielectric layer.

Abstract: An apparatus for probing a device-under-test (DUT) includes a fixture, a circuitry film attached to the fixture, a probing tip disposed on and electrically coupled to the circuitry film to probe a device-under-test, and a first signal connector disposed on the circuitry film and electrically coupled to the probing tip through the circuitry film. The first signal connector is oriented in a direction that is angularly offset from a lengthwise direction of the probing tip.

Abstract: A cholesteric liquid crystal (ChLC) display and driving method thereof are provided. The ChLC display has a driving circuit for providing voltage on a scan line and a data line so as to drive a pixel. The driving circuit provides a first voltage and a second voltage to the data and the scan lines during a first time period, a third voltage to the data line and/or a fourth voltage to the scan line during a second time period, a fifth voltage and a sixth voltage to the data and the scan lines during a third time period. The first and sixth voltages are high levels, the second and fifth voltages are low levels, the levels of the third and fourth voltages are between the high and low levels.

Abstract: A deposition apparatus includes a chamber, a susceptor, several injection pipes, and a plasma device. The susceptor is disposed within the chamber and is configured to carry a substrate. The injection pipes are respectively disposed in and pass through an upper portion of the chamber and are located over the susceptor. A nozzle of each of the injection pipes is tangent to an inner side surface of the chamber, so that several process gases ejected through the nozzles of the injection pipes respectively rotate along the inner side surface of the chamber. The process gases at least include a precursor gas. The plasma device is disposed in and passes through a top of the chamber, and is configured to generate plasma within the chamber to activate the precursor gas to form activators.

Abstract: A plasma device includes a hollow chamber casing, at least one hollow electrode tube, and an intermediate frequency plasma power supply. The hollow chamber casing has a chamber. The at least one hollow electrode tube is disposed within the chamber, in which a tube wall of the at least one hollow electrode tube is provided with several holes. The intermediate frequency plasma power supply has a first potential terminal and a second potential terminal. The first potential terminal and the second potential terminal have different potentials. The first potential terminal and the second potential terminal are respectively connected to the hollow chamber casing and the at least one hollow electrode tube.

Abstract: Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques directed to creating back end of line 2D transistors that include a metal-ferroelectric-metal-insulator-semiconductor structure used as a memory cell. In embodiments, a combination wet etch and dry etch process may be used to form the 2D transistors. Other embodiments may be described and/or claimed.

Abstract: The present invention relates to tableware and a method of manufacturing the tableware. The method can be performed under a specific weight ratio of konjac powder to an alkaline agent, a specific temperature of a molding process, and a water proofing treatment using oil, resulting in the tableware having good strength, excellent water resistance and thermal stability.

Abstract: A cholesteric liquid crystal display device includes a solar cell, a first substrate, a shielding layer, a first electrode layer, a cholesteric liquid crystal layer, a second electrode layer and a second substrate stacked sequentially from bottom to top. The solar cell includes a metal wiring pattern layer. The shielding layer corresponds to the upper side of the metal wiring pattern layer, and is used to reduce the reflection of light from the metal circuit pattern layer. In this way, the cholesteric liquid crystal display device replaces the traditional black absorbing layer with the black material of the solar cell, which can not only absorb light, but also display the image with self-sustaining power. The cholesteric liquid crystal display device shields the arrangement of the metal wiring pattern layer through the shielding layer, which can ensure the image quality of the display panel.

Abstract: Provided are hard carbon beads, their preparation method, and an energy storage device comprising the same. Microwave heating is used to synthesize cross-linked phenolic formaldehyde for reducing energy consumption and controlling the crosslinking density of cured phenolic formaldehyde. The problems caused by high temperature heating and hydrothermal process for curing resin can be solved by the instant disclosure, which can increase the economic values of electrode and energy storage device comprising the hard carbon beads.

Abstract: Metal insulator metal capacitors are described. In an example, a metal-insulator-metal (MIM) capacitor includes a first electrode that includes a bottom region and a pair of vertical regions. First metal layers are outside the vertical regions and in contact with the vertical regions. An insulator is over the first electrode. A second electrode is over the insulator. A second metal layer is on a top surface of the second electrode.