Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.

Abstract: A connecting structure for a liquid container includes a receiving groove. The liquid container having a suction tube is disposed in the receiving groove. A top end of the receiving groove is engaged with a connecting base. A front side of the connecting base is pivotally connected to a locking assembly protruding frontwards. A liftable base being movable along a top-bottom direction and a front-rear direction is disposed in an inner side of the connecting base, and has a bottom frame engaging with a sleeve that is for being connected to and communicating with a liquid pipeline and fits around the suction tube. Two extending arms extending frontwards out of the bottom frame are pivotally connected to the locking assembly. A left side and a right side of the bottom frame are pivotally connected to two swinging arms that extend backwards and are pivotally connected to the connecting base.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: An electrolyte of a redox flow battery, including a negative electrolyte and a positive electrolyte, is provided. The negative electrolyte includes a negative active material and a negative solvent, and the positive electrolyte includes a positive active material and a positive solvent. An initial volume of the negative electrolyte is greater than an initial volume of the positive electrolyte. A redox flow battery including the electrolyte is also provided.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: A video decoder can be configured to determine that a current block in a current picture of the video data is coded in an affine prediction mode; determine one or more control-point motion vectors (CPMVs) for the current block; identify an initial prediction block for the current block in a reference picture using the one or more CPMVs; determine a current template for the current block in the current picture; and determine an initial reference template for the initial prediction block in the reference picture; and perform a motion vector refinement process to determine a modified prediction block based on a comparison of the current template to the initial reference template.

Abstract: A semiconductor device includes a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions; and a gate structure over the fin and between the source/drain regions. The gate structure includes: a gate dielectric material around each of the nanosheets; a first liner material around the gate dielectric material; a work function material around the first liner material; a second liner material around the work function material; and a gate electrode material around at least portions of the second liner material.

Abstract: A power consumption monitoring device includes a sensor, a storage, and a processor. The sensor is configured to detect a power-consuming device quantity and a power consumption amount. The storage is configured to store the power-consuming device quantity and the power consumption amount. The processor is communicatively connected to the sensor and the storage. The processor is configured to calculate a power-consuming device idling indicator based on the power-consuming device quantity and the power consumption amount in a monitoring time interval, wherein the power-consuming device idling indicator is used for indicating a deviation status of the power-consuming device quantity and the power consumption amount. The processor is further configured to determine whether the power-consuming device idling indicator exceeds a warning threshold. In response to the power-consuming device idling indicator exceeding the warning threshold, the processor is further configured to generate a warning message.

Abstract: The present invention provides a high voltage semiconductor device comprising a combined junction terminal protection structure, the device comprises: an active area formed with the high voltage semiconductor device; a combined junction terminal protection structure having a RESURF (Reduced Surface Field) structure, the RESURF structure comprising a first biasing field plate electrically connecting to the active area and a ferroelectric material layer positioned below the first biasing field plate and in contact with the first biasing field plate. The high voltage semiconductor device structure may further assist in raising breakdown voltage (BV) of the device and meanwhile effectively reduce on-resistance (Ron) of the device compared with current junction terminal protection structure, and then miniaturization of the device structure may be fulfilled more easily.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: The present disclosure concerns methods and compositions related to adoptive cell therapy and its efficacy related to the gut microbiome. In specific cases, it may be determined for an individual whether or not a chimeric antigen receptor (CAR) T-cell therapy will be effective for an individual based on their gut microbiome. An individual may be provided a composition comprising one or more particular microbe compositions based on analysis of the gut microbiome of the individual and prior to administration of CAR T-cell therapy, in specific embodiments.

Abstract: A method, comprising: detecting an outage of at least one functionality in a live streaming; performing an first operation toward a second user terminal; storing data of the first operation in a database of the first user terminal; and displaying an effect corresponding to the first operation during the outage. The present disclosure may store the data of operation performed by the user terminal during outage and process the operation after the outage is recovered. Therefore, the streamers and viewers may feel interested and satisfied, instead of feeling anxious, and the user experience may be enhanced.

Abstract: An example device for decoding video data includes one or more processors implemented in circuitry and configured to: generate an inter-prediction block for a current block of video data; generate an intra-prediction block for the current block of video data; generate a final prediction block for the current block of video data from the inter-prediction block and the intra-prediction block, including performing each of combined inter/intra prediction (CIIP) mode, overlapped block motion compensation (OBMC), and luma mapping with chroma scaling (LMCS) while generating the final prediction block; and decode the current block of video data using the final prediction block. To generate the final prediction block, the processors may perform LMCS on a first inter-prediction sub-block, combine the LMCS-mapped first inter-prediction sub-block with the intra-prediction block using CIIP, and perform OBMC between the first CIIP prediction block and a second inter-prediction sub-block.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.

Abstract: The present invention provides a resonant switched capacitor voltage converter (RSCC), which is coupled to and operates synchronously with another RSCC. The RSCC includes: plural switches, a resonant inductor, a resonant capacitor, and a control circuit. The control circuit controls the switches, so that the resonant capacitor and the resonant inductor are connected in series to each other, to perform resonant operation in a switching period, thus converting an input voltage to an output voltage. The control circuit generates a zero current signal and a first synchronization signal when a resonant inductor current flowing through the resonant inductor is zero. The control circuit turns off at least one corresponding switch according to the zero current signal. The control circuit turns on at least one corresponding switch according to the zero-current signal and a second synchronization signal, so that the RSCC operates in synchronization with at least another RSCC.

Abstract: A system may include a first acoustic event detection (AED) component configured to detect a predetermined set of acoustic events, and include a second AED component configured to detect custom acoustic events that a user configures a device to detect. The first and second AED components are configured to perform task-specific processing, and may receive as input the same acoustic feature data corresponding to audio data that potentially represents occurrence of one or more events. Based on processing by the first and second AED components, a device may output data indicating that one or more acoustic events occurred, where the acoustic events may be a predetermined acoustic event and/or a custom acoustic event.

Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.

Abstract: The present invention provides a display panel, including a backplane having flexibility, a first fixing member, a front frame having flexibility, and a display module provided between the backplane and the front frame. The backplane has a base plate with a first side. The first fixing member extends corresponding to the first side and has a first predetermined curvature. The first fixing member at least has a first wall body standing upright relative to the base plate, and the first fixing member is relatively fixed to the backplane, so that the curvature of the backplane can be adjusted corresponding to the first fixing member. The front frame is provided in a manner that extends correspondingly to the periphery of the backplane, and is relatively fixed to the backplane, so that the curvature of the front frame is relatively adapted to that of the backplane.