Patents by Inventor Chi Chu

Chi Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240158968
    Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.
    Type: Application
    Filed: January 25, 2024
    Publication date: May 16, 2024
    Inventors: Ying-Chi LIN, Wei-Hung CHEN, Li-Chen CHU, Rih-Sheng CHIANG
  • Patent number: 11982019
    Abstract: A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: May 14, 2024
    Assignee: GLOBALWAFERS CO., LTD.
    Inventors: Yu-Chih Chu, Tang-Chi Lin, Han-Sheng Wu, Hsien-Ta Tseng
  • Patent number: 11976776
    Abstract: A stand adjustment device has a tripod-connecting member, a connecting seat, a proximal clamping plate, a boom-connecting tube, a locking shaft, and a manual operating member. The connecting seat is rotatably located around the tripod-connecting member. The proximal clamping plate is detachably attached to a side of the connecting seat. One end of the locking shaft is movably disposed in the boom-connecting tube. The boom is slidably mounted through the boom-connecting tube and the locking shaft. The locking shaft is slidably mounted through the boom-connecting tube, the proximal clamping plate, and the connecting seat such that the boom-connecting tube is rotatable relative to the connecting seat. The manual operating member and the locking shaft are configured to clamp the boom-connecting tube, the proximal clamping plate, and the connecting seat therebetween into a locked condition.
    Type: Grant
    Filed: May 30, 2023
    Date of Patent: May 7, 2024
    Assignee: RELIANCE INTERNATIONAL CORP.
    Inventors: Pei-Chi Chu, Cheng-Lin Ho, Chi-Chia Huang, Wei-Ting Chen
  • Publication number: 20240145653
    Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.
    Type: Application
    Filed: May 12, 2023
    Publication date: May 2, 2024
    Applicant: HANNSTAR DISPLAY CORPORATION
    Inventors: Chun-I Chu, Yu-Chi Chiao, Yung-Li Huang, Hung-Ming Chang, Cheng-Yu Lin, Huan-Hsun Hsieh, CHeng-Pei Huang
  • Publication number: 20240140869
    Abstract: The present application relates to the technical field of road infrastructure, and provides a cement-based pervious pavement structure, a manufacturing method of the cement-based pervious pavement structure, and an application of the cement-based pervious pavement structure. The cement-based pervious pavement structure includes: a lower structural layer as the base; an upper surfacing layer overlaid on said lower structural layer and including: 1.0-2.0 parts by weight of upper layer (fine) aggregate; 0.40-0.70 part by weight of cement; 0.02-0.03 part by weight of titanium dioxide; 0.03-0.04 part by weight of water reducing agent; 0.001-0.002 part by weight of defoamer. The cement-based pervious pavement structure provided by the present application can provide air purification function taking into account the practical cost.
    Type: Application
    Filed: October 11, 2023
    Publication date: May 2, 2024
    Applicant: Hip Hing Construction Technology Ltd
    Inventors: Tat Chi CHU, Kwok Leung SO, Pui Lam NG, Chung Kong CHAU, Yong FAN, Shuai ZOU, Man Lung SHAM
  • Publication number: 20240136226
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Publication number: 20240136444
    Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.
    Type: Application
    Filed: December 22, 2023
    Publication date: April 25, 2024
    Inventors: Yu-Chu Lin, Chi-Chung Jen, Wen-Chih Chiang, Yi-Ling Liu, Huai-Jen Tung, Keng-Ying Liao
  • Publication number: 20240125771
    Abstract: The present invention relates to a reaction platform, which comprises: a machine body with a bottom plate for placing non-porous substrates; and a coater module configured on the top of the machine body and capable of maintaining a preset of a predetermined height for moving along the surface of non-porous substrate, wherein the coater module has one or more slits, and a target liquid can be directly injected or sucking in from the outside of the coater module through the slit, and spreading the target liquid onto a surface of the non-porous substrate while moving along the non-porous substrate; wherein the surface of the non-porous substrate has a target to be coated. The reaction platform of the present invention can not only save time, labor and cost, but also have accurate and reproducible experimental results, showing better results than traditional methods.
    Type: Application
    Filed: July 25, 2023
    Publication date: April 18, 2024
    Inventors: An-Bang Wang, Shih-Yu Chen, Tung-Hung Su, Chia-Chi Chu, Chia-Chien Yen, Yu-Wei Chiang
  • Patent number: 11952690
    Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.
    Type: Grant
    Filed: December 1, 2021
    Date of Patent: April 9, 2024
    Assignee: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Ying-Chi Lin, Wei-Hung Chen, Li-Chen Chu, Rih-Sheng Chiang
  • Publication number: 20240114698
    Abstract: A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the bottom electrode. The noble metal electrode is over the ferroelectric layer. The non-noble metal electrode is over the noble metal electrode.
    Type: Application
    Filed: December 1, 2023
    Publication date: April 4, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzu-Yu CHEN, Sheng-Hung SHIH, Fu-Chen CHANG, Kuo-Chi TU, Wen-Ting CHU, Alexander KALNITSKY
  • Publication number: 20240112600
    Abstract: The present invention relates to a traveling wave demonstrating device. The device includes a base structure including a time window, a plurality of x-axis scales, a plurality of medium slots and a set of linear track former to form a traveling wave channel, each of which the plurality of medium slots are providing for a medium to have a free motion therein; and a traveling wave substrate movably configured on the traveling wave channel and including a plurality of time scales and a wave form opening, wherein the medium is configured to put into both the wave form opening and one of the plurality of medium slots, and when the traveling wave substrate moves along the traveling wave channel, the medium is driven to have a reciprocal motion confined in the one of the plurality of medium slots.
    Type: Application
    Filed: October 19, 2022
    Publication date: April 4, 2024
    Inventor: CHING-CHI CHU
  • Publication number: 20240111167
    Abstract: The present invention relates to an optical polarization effect demonstrating device. The device includes a first circular rotating polarization disk including a first main observation window and a first polarization film having a first polarization direction viewable through the first circular observation window; and a second circular rotating polarization disk including a second main observation window and a second polarization film having a second polarization direction viewable through the second circular observation window, wherein the first circular rotating polarization disk and the second circular rotating polarization disk are rotatably assembled in a concentric way such that the first circular rotating polarization disk and the second circular rotating polarization disk are rotatable with each other, and the first polarization direction is different from the second polarization direction.
    Type: Application
    Filed: October 19, 2022
    Publication date: April 4, 2024
    Inventor: CHING-CHI CHU
  • Patent number: 11947745
    Abstract: A handwriting data processing method is applied to a pen display having wireless communication function and a data processing device. The handwriting data processing method includes the steps of: the data processing device obtaining a handwriting data from the pen display in a wireless communication manner; the data processing device generating a compressed screen image and transmitting the data of the compressed screen image and the handwriting data, which is not compressed, to the pen display in the wireless communication manner; the pen display uncompressing the data of the compressed screen image and overlapping the uncompressed screen image and the handwriting data to form a complete screen image and displaying the complete screen image. By the handwriting processing method, the machine time of the processor of the pen display is effectively lowered, significantly reducing the delay phenomenon of the displayed handwriting.
    Type: Grant
    Filed: February 16, 2023
    Date of Patent: April 2, 2024
    Assignee: USI ELECTRONICS (SHENZHEN) CO., LTD.
    Inventors: Chih-Hsiang Chen, Chi-Hua Shih, Huang-Chu Liu, Jan-Yi Hsiao
  • Patent number: 11942417
    Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Chi Chu, Sih-Hao Liao, Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Publication number: 20240088056
    Abstract: A method includes encapsulating a device die in an encapsulating material, forming a first dielectric layer over the device die and the encapsulating material, forming first redistribution lines extending into the first dielectric layer to electrically couple to the device die, forming an alignment mark over the first dielectric layer, wherein the alignment mark includes a plurality of elongated strips, forming a second dielectric layer over the first redistribution lines and the alignment mark, and forming second redistribution lines extending into the second dielectric layer to electrically couple to the first redistribution lines. The second redistribution lines are formed using the alignment mark for alignment.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Inventors: Jhih-Yu Wang, Yung-Chi Chu, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Publication number: 20240071455
    Abstract: The present disclosure relates to an integrated chip structure. The integrated chip structure includes a first source/drain region and a second source/drain region disposed within a substrate. A select gate is over the substrate between the first source/drain region and the second source/drain region. A ferroelectric random access memory (FeRAM) device is over the substrate between the select gate and the first source/drain region. A transistor device is disposed on an upper surface of the substrate. The substrate has a recessed surface that is below the upper surface of the substrate and that is laterally separated from the upper surface of the substrate by a boundary isolation structure extending into a trench within the upper surface of the substrate. The FeRAM device is arranged over the recessed surface.
    Type: Application
    Filed: November 10, 2023
    Publication date: February 29, 2024
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Yong-Shiuan Tsair
  • Publication number: 20240072035
    Abstract: A circuit is presented including a plurality of cells separated by a plurality of cell boundaries and at least one curved gate cut region disposed over a curved cell boundary of the plurality of cell boundaries. The at least one curved gate cut region separates a reduced active area from a widened active area. The reduced active area is defined above the curved cell boundary and the widened active area is defined below the curved cell boundary.
    Type: Application
    Filed: August 31, 2022
    Publication date: February 29, 2024
    Inventors: Ruilong Xie, Indira Seshadri, Cheng Chi, Albert M. Chu
  • Patent number: 11915976
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20240044850
    Abstract: The disclosure describes embodiments of an apparatus including a first gas chromatograph including a fluid inlet, a fluid outlet, and a first temperature control. A controller is coupled to the first temperature control and includes logic to apply a first temperature profile to the first temperature control to heat, cool, or both heat and cool the first gas chromatograph. Other embodiments are disclosed and claimed.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 8, 2024
    Inventors: Tsung-Kuan A. Chou, Shih-Chi Chu, Chia-Sheng Cheng, Li-Peng Wang, Chien-Lin Huang
  • Patent number: D1015435
    Type: Grant
    Filed: October 13, 2021
    Date of Patent: February 20, 2024
    Assignee: NATIONAL CENTRAL UNIVERSITY
    Inventors: Ching-Chi Chu, Kai-Wen Lu, Fu-Cheng Hsieh