Patents by Inventor Chi Hong AN

Chi Hong AN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210152107
    Abstract: A body of a robot includes a motor and a driver. A micro control unit (MCU) is configured in the motor, and it senses a magnetic field of a rotor of the motor and generates two voltage signals. Then, the MCU receives a pulse signal from the driver, and calculates an ideal angular velocity of the rotor according to the pulse signal. In addition, the MCU calculates a current angular velocity of the rotor based on the voltage signals. Next, the MCU transmits a calibration signal to a pulse width-modulation (PWM) amplifier of the motor according to the difference between the current angular velocity and the ideal angular velocity so that the pulse width modulation amplifier calibrates the current angular velocity of the rotor according to the calibration signal, thereby adjusts an action of the robot.
    Type: Application
    Filed: December 3, 2019
    Publication date: May 20, 2021
    Inventor: Chi-Hong WU
  • Patent number: 11011357
    Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: May 18, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hanbing Wu, Anantha K. Subramani, Ashish Goel, Xiaodong Wang, Wei W. Wang, Rongjun Wang, Chi Hong Ching
  • Patent number: 10998496
    Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: May 4, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Lin Xue, Chi Hong Ching, Xiaodong Wang, Mahendra Pakala, Rongjun Wang
  • Publication number: 20210119119
    Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
    Type: Application
    Filed: December 4, 2020
    Publication date: April 22, 2021
    Inventors: Lin XUE, Chando PARK, Chi Hong CHING, Jaesoo AHN, Mahendra PAKALA
  • Patent number: 10957849
    Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ a first pinning layer and a second pinning layer with a synthetic anti-ferrimagnetic layer disposed therebetween. The first pinning layer in contact with the seed layer can contain a single layer of platinum or palladium, alone or in combination with one or more bilayers of cobalt and platinum (Pt), nickel (Ni), or palladium (Pd), or combinations or alloys thereof, The first pinning layer and the second pinning layer can have a different composition or configuration such that the first pinning layer has a higher magnetic material content than the second pinning layer and/or is thicker than the second pinning layer. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: March 23, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Lin Xue, Chi Hong Ching, Rongjun Wang, Mahendra Pakala
  • Patent number: 10944050
    Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: March 9, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Lin Xue, Chi Hong Ching, Rongjun Wang, Mahendra Pakala
  • Patent number: 10923652
    Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Lin Xue, Chando Park, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala
  • Patent number: 10910329
    Abstract: The disclosure relates to a semiconductor package device. The semiconductor package device includes a substrate, a waveguide component, a package body, a first dielectric layer, an antenna pattern, and an antenna feeding layer. The waveguide component is on the substrate. The package body is on the substrate and encapsulates the waveguide component. The first dielectric layer is on the package body and has a first surface and a second surface adjacent to the package body and opposite to the first surface. The antenna pattern is on the first surface of the first dielectric layer. The antenna feeding layer is on the second surface of the first dielectric layer.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: February 2, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Kuo-Hsien Liao, Alex Chi-Hong Chan
  • Publication number: 20200403152
    Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
    Type: Application
    Filed: June 21, 2019
    Publication date: December 24, 2020
    Inventors: Lin XUE, Chando PARK, Chi Hong CHING, Jaesoo AHN, Mahendra PAKALA
  • Patent number: 10848005
    Abstract: A receiver is energized by wireless power from a coil antenna. A matching network tunes the receiver to a resonant frequency and a bridge and capacitor generate an output voltage. The output voltage is divided and compared to a reference voltage. An asynchronous digital controller increases a digital count when the compare result is true, but decreases the digital count when the compare result is false. A current-steering Digital-to-Analog Converter (DAC) shunts a current from the output that is a function of the digital count. The asynchronous digital controller, comparator, and DAC do not use a system clock, so the digital feedback to the shunt current operates when the target output voltage is reached, preventing over-voltage when waiting for the system clock to begin pulsing. The digital count is compared to a digital threshold to recover transmitted Amplitude-Shifted-Keyed (ASK) data.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: November 24, 2020
    Assignee: Hong Kong Applied Science and Technology Research Institute Company, Limited
    Inventors: Chi Hong Chan, Gordon Chung, Bun Go Yau
  • Publication number: 20200358315
    Abstract: A receiver is energized by wireless power from a coil antenna. A matching network tunes the receiver to a resonant frequency and a bridge and capacitor generate an output voltage. The output voltage is divided and compared to a reference voltage. An asynchronous digital controller increases a digital count when the compare result is true, but decreases the digital count when the compare result is false. A current-steering Digital-to-Analog Converter (DAC) shunts a current from the output that is a function of the digital count. The asynchronous digital controller, comparator, and DAC do not use a system clock, so the digital feedback to the shunt current operates when the target output voltage is reached, preventing over-voltage when waiting for the system clock to begin pulsing. The digital count is compared to a digital threshold to recover transmitted Amplitude-Shifted-Keyed (ASK) data.
    Type: Application
    Filed: May 7, 2019
    Publication date: November 12, 2020
    Inventors: Chi Hong CHAN, Gordon CHUNG, Bun Go YAU
  • Patent number: 10753351
    Abstract: The present application provides an air inflation device and a tire repair machine comprising the air inflating device. The air inflating device comprises a housing (1), a compressor device (2) including a compressor main body (21), and an outlet nozzle (22) that is connected to the compressor main body (2) as a compressed air discharge opening; the compressor device (2) is stored in the housing (1), and the housing (1) is divided into a second chamber (11) and a third chamber (12) by the compressor device (2); a fan (212) and the outlet nozzle (22) are located in the second chamber (11). The air inflating device and the tire repair machine of the present application have a simple structure and a strong practicality.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: August 25, 2020
    Assignee: ACTIVE TOOLS INTERNATIONAL (HK) LTD.
    Inventor: David Ying Chi Hong
  • Publication number: 20200259078
    Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.
    Type: Application
    Filed: April 27, 2020
    Publication date: August 13, 2020
    Inventors: Lin XUE, Chi Hong CHING, Xiaodong WANG, Mahendra PAKALA, Rongjun WANG
  • Publication number: 20200185581
    Abstract: An optical device package includes a substrate, a light emitting device, a light detecting device, one or more electronic chips, a clear encapsulation layer and a patterned reflective layer. The substrate has a surface. The light emitting device is disposed on the surface of the substrate, the light detecting device is disposed on the surface of the substrate, and the light emitting device and the light detecting device have a gap. The one or more electronic chips are at least partially embedded in the substrate, and electrically connected to the light emitting device and the light detecting device. The clear encapsulation layer is disposed on the surface of the substrate and encapsulates the light emitting device and the light detecting device. The patterned reflective layer is disposed on an upper surface of the clear encapsulation layer and at least overlaps the gap between the light emitting device and the light detecting device in a projection direction perpendicular to the surface of the substrate.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 11, 2020
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chanyuan LIU, Kuo-Hsien LIAO, Alex Chi-Hong CHAN, Fuh-Yuh SHIH
  • Publication number: 20200176394
    Abstract: A semiconductor package structure includes a substrate structure having a first surface and a second surface opposite to the first surface; at least two electronic components electrically connected to the first surface of the substrate structure; at least one shielding pad disposed on the first surface of the substrate structure; a plurality of vias connected to the at least one shielding pad; a plurality of shielding wirebonds disposed between the electronic components. Each of the shielding wirebonds includes a first bond and a second bond opposite to the first bond, the first bond and the second bond being electrically connected to the at least one shielding pad, and the vias being free from overlapping with any of the plurality of vias.
    Type: Application
    Filed: November 25, 2019
    Publication date: June 4, 2020
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chanyuan LIU, Han-Chee YEN, Kuo-Hsien LIAO, Alex Chi-Hong CHAN, Christophe Zinck
  • Patent number: 10665426
    Abstract: Methods are disclosed for depositing a thin film of compound material on a substrate. In some embodiments, a method of depositing a layer of compound material on a substrate include: flowing a reactive gas into a plasma processing chamber having a substrate to be sputter deposited disposed therein in opposition to a sputter target comprising a metal; exciting the reactive gas into a reactive gas plasma to react with the sputter target and to form a first layer of compound material thereon; flowing an inert gas into the plasma processing chamber; and exciting the inert gas into a plasma to sputter a second layer of the compound material onto the substrate directly from the first layer of compound material. The cycles of target poisoning and sputtering may be repeated until a compound material layer of appropriate thickness has been formed on the substrate.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: May 26, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yana Cheng, Zhefeng Li, Chi Hong Ching, Yong Cao, Rongjun Wang
  • Publication number: 20200160884
    Abstract: Embodiments herein provide film stacks that include a buffer layer; a synthetic ferrimagnet (SyF) coupling layer; and a capping layer, wherein the capping layer comprises one or more layers, and wherein the capping layer, the buffer layer, the SyF coupling layer, or a combination thereof, is not fabricated from Ru.
    Type: Application
    Filed: January 27, 2020
    Publication date: May 21, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Lin XUE, Chi Hong CHING, Jaesoo AHN, Mahendra PAKALA, Rongjun WANG
  • Patent number: 10636964
    Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Lin Xue, Chi Hong Ching, Xiaodong Wang, Mahendra Pakala, Rongjun Wang
  • Patent number: 10622011
    Abstract: Embodiments herein provide methods of forming a magnetic tunnel junction structure. The method includes forming a film stack that includes: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru; and forming a magnetic tunnel junction structure.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: April 14, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Lin Xue, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala, Rongjun Wang
  • Publication number: 20200055452
    Abstract: Methods and systems are described for resolving a blind spot in a side-view mirror of a vehicle and for determining, in the event of an accident during a lane change, who is at fault by recording the surrounding situation to a recording device. Instead of a side-view mirror, a mobile phone camera lens is installed near where a headlight is installed approximately one meter in front of the position of conventional side-view mirrors. Monitors are installed to the left and right of the vehicle dashboard. When the left and right side monitors are connected to the mobile phone camera lenses through a cable, the same background as a rearview background seen through the mobile phone camera lens can be seen on the monitors, thereby allowing a driver to see, through the monitors installed inside the vehicle, transparent rear left and right backgrounds having wide ranges and absent of blind spots.
    Type: Application
    Filed: November 6, 2017
    Publication date: February 20, 2020
    Inventor: Chi Hong YEO