Abstract: A vehicle body assembly system defines a preset pre-buck section and a preset main-buck section along a conveying route of a floor assembly, and may include: i) pre-buck units which are installed at both sides of the conveying route in the pre-buck section, respectively, restrict lower portions of side assemblies, which vary in accordance with a type of vehicle, with respect to both sides of the floor assembly, and preassemble the lower portions of the side assemblies to the floor assembly by a first welding robot; and ii) main-buck units which are installed at both sides of the conveying route in the main-buck section, respectively, restrict upper portions of the side assemblies preassembled by the pre-buck unit, and post-assemble vehicle body components to the upper portions of the side assemblies by a second welding robot.

Abstract: A medication management system includes a cabinet, at least one drawer unit, at least one positioning unit and at least one control unit. The at least one drawer unit has an engaging portion. The at least one positioning unit includes an engaging module that separably engages with the engaging portion of the at least one drawer unit, a drive module that is operable to disengage the engaging module from the engaging portion of the at least one drawer unit, and an actuator that actuates operation of the drive unit to disengage the engaging module from the engaging portion of the at least one drawer unit based on an opening signal. The control unit is electrically connected to the actuator for outputting the opening signal.

Abstract: A medication management system includes a cabinet, at least one drawer unit, at least one positioning unit and at least one control unit. The at least one drawer unit has an engaging portion. The at least one positioning unit includes an engaging module that separably engages with the engaging portion of the at least one drawer unit, a drive module that is operable to disengage the engaging module from the engaging portion of the at least one drawer unit, and an actuator that actuates operation of the drive unit to disengage the engaging module from the engaging portion of the at least one drawer unit based on an opening signal. The control unit is electrically connected to the actuator for outputting the opening signal.

Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ a first pinning layer and a second pinning layer with a synthetic anti-ferrimagnetic layer disposed therebetween. The first pinning layer in contact with the seed layer can contain a single layer of platinum or palladium, alone or in combination with one or more bilayers of cobalt and platinum (Pt), nickel (Ni), or palladium (Pd), or combinations or alloys thereof, The first pinning layer and the second pinning layer can have a different composition or configuration such that the first pinning layer has a higher magnetic material content than the second pinning layer and/or is thicker than the second pinning layer. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.

Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.

Abstract: Embodiments of the present disclosure are for systems and methods for fabrication of a magnetic tunnel junction stack. This fabrication can occur via methods including one or more of (1) heating the substrate after the deposition of a buffer layer on the substrate, prior to deposition of a seed layer; (2) cooling the substrate after the deposition of a second pinning layer, before deposition of a structure blocking layer; (3) heating the substrate during the deposition of a tunnel barrier layer and then cooling it after the deposition of the tunnel barrier layer is complete; (4) heating the substrate after the deposition of a magnetic storage layer on the tunnel barrier layer; and (5) cooling the substrate after the deposition of the magnetic storage layer before a first interlayer of the capping layer is deposited.

Abstract: A pre-buck apparatus for a vehicle body assembling system comprises a pre-buck section and a main buck section that are set along a transfer path of a floor assembly. The pre-buck apparatus is formed in the pre-buck section, and while the side assembly is disposed in each of opposite sides of the transfer path in the pre-buck section, the pre-buck apparatus controls a lower portion of the side assembly, and the lower portion of the side assembly is pre-assembled to the floor assembly using a first welding robot.

Abstract: A programmable-threshold power supply selector has two power-supply inputs VDD1 and VDD2. The higher of these two voltages is pre-selected as a common supply that powers all transistors and circuitry in the programmable-threshold power supply selector, including substrates under transistors. An open-loop decision circuit is very stable since it uses no feedback. A tunable voltage divider divides VDD1 by a programmable divisor. The divided VDD1 is compared to a reference voltage to generate switch-control signals. The switch-control signals drive the gates of p-channel switch transistors that connect either VDD1 or VDD2 to an output supply voltage. The different programmable divisor values effectively cause VDD1 to be compared to a programmable threshold voltage VTH. The switch transistors switch the output supply voltage to VDD2 only when VDD1 falls below VTH. The output supply voltage remains at VDD1 even when VDD1 falls below VDD2, eliminating unnecessary power switching.

Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

Abstract: Embodiments herein provide methods of forming a magnetic tunnel junction structure. The method includes forming a film stack that includes: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru; and forming a magnetic tunnel junction structure.

Abstract: A programmable-threshold power supply selector has two power-supply inputs VDD1 and VDD2. The higher of these two voltages is pre-selected as a common supply that powers all transistors and circuitry in the programmable-threshold power supply selector, including substrates under transistors. An open-loop decision circuit is very stable since it uses no feedback. A tunable voltage divider divides VDD1 by a programmable divisor. The divided VDD1 is compared to a reference voltage to generate switch-control signals. The switch-control signals drive the gates of p-channel switch transistors that connect either VDD1 or VDD2 to an output supply voltage. The different programmable divisor values effectively cause VDD1 to be compared to a programmable threshold voltage VTH. The switch transistors switch the output supply voltage to VDD2 only when VDD1 falls below VTH. The output supply voltage remains at VDD1 even when VDD1 falls below VDD2, eliminating unnecessary power switching.

Abstract: Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.

Abstract: The present invention relates to an electric vehicle equipped with a wind power generator comprising fans having spiral suction blades. The wind power generator includes a spiral suction fan with blades having the same height and an electric fan-type spiral suction fan provided inside a funnel-shaped cylindrical protective cover to which the Venturi principle is applied, the funnel-shaped cylindrical protective cover being capable of increasing wind suctioned from outside and converting the wind into a wind speed. The electric fan-type spiral suction fan and the spiral suction fan with blades having the same height are connected to a power generator so as to generate electricity. The generated electricity is stored in a storage battery first and is then used to drive the vehicle in connection with to an electric motor, and the remaining electricity is supplied to an electric power company so as to supplement electricity at home or an industrial complex.

Abstract: The present invention relates to a use of mycophenolate mofetil or a pharmaceutically acceptable salt thereof in the manufacture of a medicament against influenza virus. The present invention also relates to a use of mycophenolate mofetil or a pharmaceutically acceptable salt thereof in the manufacture of a medicament against drug-resistant influenza virus strains. The present invention is further related to a method for treating influenza in a subject, comprising administering to said subject an effective amount of mycophenolate mofetil or a pharmaceutically acceptable salt thereof.

Abstract: A storage device receiving an external instruction from a host includes a plurality of flash memory spaces and a controller. The controller receives the external instruction, queues the external instruction in a first command queue, translates the external instruction into a plurality of operation commands, and sequentially executes the operation commands to respectively operate the flash memory spaces. The controller further gives an identity code to at least one specific operation command to track the execution result of the specific operation command.

Abstract: Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.

Abstract: A method for remotely controlling a home device in a mobile terminal is provided. The method includes receiving a chat message input to the mobile terminal for controlling at least one home device through an instant messenger application installed in the mobile terminal, and sending the chat message to a messenger server. The sent chat message is converted into a control command, which is sent to the home device.

Abstract: Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.

Abstract: The disclosure relates to a semiconductor package device. The semiconductor package device includes a substrate, a waveguide component, a package body, a first dielectric layer, an antenna pattern, and an antenna feeding layer. The waveguide component is on the substrate. The package body is on the substrate and encapsulates the waveguide component. The first dielectric layer is on the package body and has a first surface and a second surface adjacent to the package body and opposite to the first surface. The antenna pattern is on the first surface of the first dielectric layer. The antenna feeding layer is on the second surface of the first dielectric layer.