Abstract: A LED lamp assembly includes a rectangular electrical box formed of two symmetrical U-shaped frame panels that are detachably fastened together by a tongue-and-groove joint and holding therein a control circuit board that is affixed to two parallel mounting grooves in one U-shaped frame panel by screw nails, a back cover plate and a bracket affixed to the electrical box at two opposite sides for mounting, and an elongated, rectangular light source unit affixed to the bracket and controllable by the control circuit board to emit light.

Abstract: A LED lamp assembly for use in a long passage includes an elongated rectangular housing carrying multiple power-output electric connectors, a power-input electric connector and a power switch, a flat rectangular light source having a light-emitting face and selectively fastened to a rectangular top end of housing in one of four angular positions that spaced from one another at 90° angle, and a mounting plate extending perpendicularly from one side of the rectangular end wall of the housing having a plurality a plurality of equiangularly spaced and smoothly arched mounting slots for mounting.

Abstract: A photovoltaic module includes a substrate, a plurality of cell sets, a first collecting electrode and a second collecting electrode. The cell sets are disposed on the substrate. Each of the cell sets includes a plurality of cell units, a bottom connecting electrode and an upper connecting electrode. The plurality of cell units are electrically connected to each other in series. The cell units are electrically connected between the bottom connecting electrode and the upper connecting electrode. The first collecting electrode is disposed on the substrate and is electrically connected to the bottom connecting electrode of every cell set. The second collecting electrode is disposed on the substrate and is electrically connected to the upper connecting electrode of every cell set. The second collecting electrode and the cell sets are substantially made of the same layer.

Abstract: A capacitance sensing circuit for a touch panel includes an analog capacitance-detecting circuit, a PWM-to-digital circuit and a self-calibration circuit. The analog capacitance-detecting circuit detects the capacitance of the touch panel based on a charging current, and converts the detected capacitance into a PWM control signal. The PWM-to-digital circuit converts the PWM control signal into a sensing count value based on a clock signal. The self-calibration circuit adjusts the value of the charging current or the frequency of the clock signal according to the difference between the range of the sensing count value and a predetermined detecting range. The predetermined detecting range can thus be adjusted for matching the range of the sensing count value.

Abstract: A LED lamp assembly for use in a long passage includes an elongated rectangular housing carrying multiple power-output electric connectors, a power-input electric connector and a power switch, a flat rectangular light source having a light-emitting face and selectively fastened to a rectangular top end of housing in one of four angular positions that spaced from one another at 90° angle, and a mounting plate extending perpendicularly from one side of the rectangular end wall of the housing having a plurality a plurality of equiangularly spaced and smoothly arched mounting slots for mounting.

Abstract: In a capacitance sensing analog circuit of a touch panel sensing circuit, by raising a magnitude of a current flowing through a sensing capacitor to form an amplified sensing capacitance, while sensing the amplified sensing capacitance with the aid of pulse width modulation signals, higher resolution of the original sensing capacitance may thus be achieved. Besides, by using a self-calibrating capacitance sensing circuit on the touch panel sensing circuit, linear errors and DC errors of an output signal of the capacitance sensing analog circuit may be filtered off, and thereby resolution of a capacitance amplifying ratio may be effectively raised so as to relieve errors within the capacitance amplifying ratio caused by noises.

Abstract: A voltage converter for use in a backlight module stores energy of an input voltage using an inductor and outputs a plurality of output voltages accordingly. The charging path of the inductor is controlled according to the first output voltage so that the first output voltage can be stabilized. The discharging paths from the inductor to other output voltages are controlled according to the differences between other output voltages and the first output voltage so that other output voltages can also be stabilized.

Abstract: A driving circuit of a backlight module is provided. The driving circuit has a dimming unit used for transmitting signals, wherein the dimming unit can adjust a current flowing through a light-emitting diode (LED) according a pulse width modulation signal and an enable signal, so as to adjust a light-emitting intensity of the LED. In the present invention, fewer devices are used to implement the dimming unit, and a transmission gate is replaced by a N-type transistor and a P-type transistor, such that a chip area and a circuit cost of the driving circuit are reduced.

Abstract: A voltage converter for use in a backlight module stores energy of an input voltage using an inductor and outputs a plurality of output voltages accordingly. The charging path of the inductor is controlled according to the first output voltage so that the first output voltage can be stabilized. The discharging paths from the inductor to other output voltages are controlled according to the differences between other output voltages and the first output voltage so that other output voltages can also be stabilized.

Abstract: A capacitance sensing circuit for a touch panel includes an analog capacitance-detecting circuit, a PWM-to-digital circuit and a self-calibration circuit. The analog capacitance-detecting circuit detects the capacitance of the touch panel based on a charging current, and converts the detected capacitance into a PWM control signal. The PWM-to-digital circuit converts the PWM control signal into a sensing count value based on a clock signal. The self-calibration circuit adjusts the value of the charging current or the frequency of the clock signal according to the difference between the range of the sensing count value and a predetermined detecting range. The predetermined detecting range can thus be adjusted for matching the range of the sensing count value.

Abstract: In a capacitance sensing analog circuit of a touch panel sensing circuit, by raising a magnitude of a current flowing through a sensing capacitor to form an amplified sensing capacitance, while sensing the amplified sensing capacitance with the aid of pulse width modulation signals, higher resolution of the original sensing capacitance may thus be achieved. Besides, by using a self-calibrating capacitance sensing circuit on the touch panel sensing circuit, linear errors and DC errors of an output signal of the capacitance sensing analog circuit may be filtered off, and thereby resolution of a capacitance amplifying ratio may be effectively raised so as to relieve errors within the capacitance amplifying ratio caused by noises.

Abstract: A multi-layered complementary conductive line structure, a manufacturing method thereof and a manufacturing method of a TFT (thin film transistor) display array are provided. The process of TFT having multi-layered complementary conductive line structures does not need to increase the mask number in comparison with the currently process and is able to solve the resistance problem of the lines inside a display.

Abstract: A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

Abstract: A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.

Abstract: A driving circuit of a backlight module is provided. The driving circuit has a dimming unit used for transmitting signals, wherein the dimming unit can adjust a current flowing through a light-emitting diode (LED) according a pulse width modulation signal and an enable signal, so as to adjust a light-emitting intensity of the LED. In the present invention, fewer devices are used to implement the dimming unit, and a transmission gate is replaced by a N-type transistor and a P-type transistor, such that a chip area and a circuit cost of the driving circuit are reduced.

Abstract: A structure of a thin film transistor and a method for making the same are provided. The structure includes a strip-shaped silicon island, a gate, and a first and second ion doping regions. The strip-shaped silicon island is a thin film region with a predetermined long side and short side, and farther has a plurality of lateral grain boundaries substantially parallel to the short side of the silicon island. The gate is located over the silicon island and substantially parallel to the lateral grain boundaries. The first and second ion doping regions, used as source/drain regions of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate.

Abstract: A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.

Abstract: A back contact module for a solar cell is provided. The back contact module includes a transparent conductive layer, a plurality of nano-sized scatters in the transparent conductive layer, and a metal layer on the transparent conductive layer.

Abstract: A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.