Patents by Inventor Chi-Lin Chen

Chi-Lin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050048407
    Abstract: A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.
    Type: Application
    Filed: September 30, 2003
    Publication date: March 3, 2005
    Applicant: Industrial Technology Research Institute
    Inventors: Chi-Shen Lee, Yung-Fu Wu, Chi-Lin Chen, Cheng-Chung Chen
  • Publication number: 20040263065
    Abstract: The present invention discloses an active organic light emitting diode (AOLED) display structure. A color filter and thin film transistor organic light emitting diode (TFT-OLED) are incorporated on one substrate of the AOLED. Moreover, a Indium Tin Oxide(ITO)layer of the AOLED is deposited with a black matrix layer so as to lower light leakage effect and increase the contrast and color purity level in between pixels of the display. By adopting such technology, a flat panel display having large area, high resolution and low product cost is accordingly implemented.
    Type: Application
    Filed: September 30, 2003
    Publication date: December 30, 2004
    Applicant: Industrial Technology Research Institute
    Inventors: Yung-Hui Yeh, Chi-Lin Chen, Yu-Lung Liu, Ching-Hsuan Tang, Lung-Pin Hsin
  • Publication number: 20040253797
    Abstract: The present invention relates to a heating plate crystallization method used in the crystallization process for the poly-silicon thin-film transistor, and more particularly, the present invention relates to a heating plate crystallization method by using a pulsed rapid thermal annealing process (PRTP) By means of the characteristic provided by the present invention, namely, the heating plate area has a better absorption rate to the infrared rays and has a high thermal stability. The heating plate area is used for absorbing the infrared rays, and after the heating, the energy is indirectly transferred to the amorphous layer via a thermal conduction method so that the amorphous layer will be rapidly crystallized to form the poly-silicon. Furthermore, the present invention uses the pulsed rapid thermal annealing process (PRTP) using the infrared rays to instantly heat, to selectively heat the materials by taking the advantage that different materials have different absorption rates to the infrared rays.
    Type: Application
    Filed: August 27, 2003
    Publication date: December 16, 2004
    Applicant: Industrial Technology Research Institute
    Inventors: Shun-Fa Huang, Chi-Lin Chen, Chiung-Wei Lin
  • Publication number: 20040055999
    Abstract: The present invention relates to a method for planarizing polysilicon. The method includes providing a substrate with polysilicon on the surface, etching the surface of the polysilicon to initially reduce surface roughness, and laser annealing the polysilicon to partially melt the polysilicon to planarize the surface thereof.
    Type: Application
    Filed: February 5, 2003
    Publication date: March 25, 2004
    Inventors: Yu-Cheng Chen, Jia-Xing Lin, Chi-Lin Chen
  • Publication number: 20040053431
    Abstract: A method of forming a flexible thin film transistor (TFT) display device. A metal foil serving as a flexible metal substrate of a display device is provided, wherein the metal foil is an aluminum alloy foil, a titanium foil or a titanium alloy foil. The thickness of the metal foil is 0.05˜0.8 mm. An insulation layer is formed on the flexible metal substrate. A thin film transistor (TFT) array is formed on the insulation layer. In addition, the aluminum alloy foil can include magnesium of 0.01˜1% wt and/or silicon of 0.01˜1% wt and the titanium alloy foil can include aluminum of 0.01˜20% wt and/or molybdenum of 0.01˜20% wt.
    Type: Application
    Filed: June 11, 2003
    Publication date: March 18, 2004
    Applicant: Industrial Technology Research Institute
    Inventors: Chich Shang Chang, Wen-Tung Wang, Yuan-Tung Dai, Chiung-Wei Lin, Chi-Lin Chen, Tsung-Neng Liao, Chi-Shen Lee
  • Publication number: 20040053449
    Abstract: A method for producing plastic active panel displays. The method comprises: providing a glass substrate, followed by the formation of a sacrificial layer on top of the glass substrate, forming thin film transistor (TFT) on the sacrificial layer, forming a display material on the TFT, subjecting the glass substrate to laser so that the glass substrate and the sacrificial layer are detached from the TFT, thereby exposing the TFT, and attaching a plastic substrate to the TFT.
    Type: Application
    Filed: November 22, 2002
    Publication date: March 18, 2004
    Inventors: Chich-Shang Chang, Wen-Tung Wang, Chiung-Wei Lin, Chi-Lin Chen
  • Publication number: 20030186074
    Abstract: This specification discloses a metal electrode that uses MoW (molybdenum-tungsten) alloy as its barrier layers and the method for making the same. Using MoW alloy as the barrier layer of a metal electrode can effectively solve the spiking and hillock problems occurred in aluminum electrodes. The MoW alloy barrier layer is thermally stable, preventing the resistance from rising due to the high-temperature manufacturing process. The metal electrode using the MoW alloy as the barrier layer can be prepared using the dry etching process. The resulting resistance is lower than other kinds of barrier layers. The MoW alloy barrier layer can be used in TFT metal electrodes for high-resolution and large-area displays.
    Type: Application
    Filed: April 2, 2002
    Publication date: October 2, 2003
    Inventors: Chi-Lin Chen, Chich-Shang Chang
  • Publication number: 20030164290
    Abstract: A method of forming an indium tin oxide (ITO) layer on a heat-sensitive substrate. An amorphous ITO layer is formed on the substrate by a sputtering process, wherein the temperature of the sputtering process is controlled at room temperature and, in situ, hydrogen gas with a flow rate of 1˜5 sccm is introduced in the sputtering process. Part of the amorphous ITO layer is removed by an oxalic acid solution to form an amorphous ITO pattern on the substrate. A heat treatment whose temperature is below 150° C. is performed to turn the amorphous ITO pattern into a crystalline ITO layer. Thus, a crystalline and flat ITO layer can be formed on the heat-sensitive substrate.
    Type: Application
    Filed: November 22, 2002
    Publication date: September 4, 2003
    Inventors: Chi-Lin Chen, Tsung-Neng Liao
  • Patent number: 6181123
    Abstract: A digital programmable DC—DC voltage-down converter which can be used in a low voltage and low power digital circuit design is disclosed. The DC—DC voltage-down converter includes at least a digitally controlled oscillator (DCO), a pulse-width modulator (PWM), a gate driver, and a switching-type voltage-down converter. Duty cycle and operating frequency of the modulated signal are controlled by using two digital control signals. Furthermore, combining the pulse-width modulator and the digitally controlled oscillator (DCO), the duty cycle of the generated clock is more robustly stable for different frequencies during process variation.
    Type: Grant
    Filed: March 11, 1999
    Date of Patent: January 30, 2001
    Assignee: Farady Technology Corp.
    Inventors: Shyh-Jye Jou, Chi-Lin Chen, Li-Kuo Liu
  • Patent number: 5307255
    Abstract: An improved structure of portable quartz lamp with a lamp housing having a handle and a central post therebeneath, which has between a stand and the central post a connecting piece having a hollowed interior and has an upper and a lower axial pipe portions, the upper one is threadably connected with the central post, and the lower one has its bottom end supported on a top surface of the stand and connected with a bolt thereunder; power conductors are connected in such a way that they will not be tangled with one another when in adjustment of light intensity; the rear surface of the connecting piece has a case for shielding the adjusting mechanism; the adjustment can therefore be effected unafraid of rain infiltration.
    Type: Grant
    Filed: February 2, 1993
    Date of Patent: April 26, 1994
    Inventor: Chi-Lin Chen