Abstract: A thin film transistor and a fabrication method thereof are provided. A metal patterning layer is formed on the metal oxide semiconductor layer of a thin film transistor to shield the metal oxide semiconductor layer from the water, oxygen and light in the environment.

Abstract: A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.

Abstract: A thin film transistor disposed on a substrate is provided. The TFT includes a gate layer, an insulation layer, a carrier transmission layer, a passivation layer, a first source/drain layer, and a second source/drain layer. The gate layer is disposed on the substrate. The insulation layer is disposed on the gate layer. The carrier transmission layer is disposed on the insulation layer. The carrier transmission layer includes an active layer and a mobility enhancement layer. The passivation layer is disposed on the active layer. The first source/drain layer is disposed on the active layer. The second source/drain layer is disposed on the active layer. The mobility enhancement layer includes a first element. The active layer includes a second element. The electronegativity of the first element is smaller than that of the second element to enhance the carrier mobility of the active layer.

Abstract: An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device.

Abstract: A thin film transistor structure is provided. The thin film transistor structure includes a first transistor having a first active layer, a second transistor having a second active layer, a first protection layer contacting the first active layer, and a second protection layer contacting the second active layer. The oxygen contents of the first and the second protection layers are controlled to affect the oxygen vacancy number of the first and the second active layers to satisfy the various electronic requirements of the first and the second transistors.

Abstract: A touch display panel including an active device array substrate, an opposite substrate and a liquid crystal layer is provided. The active device array substrate includes a first substrate, a black matrix, a touch-sensing device layer, a dielectric layer and an active device array layer. The black matrix is disposed on the first substrate. The touch-sensing device layer is disposed on the first substrate to cover a portion of the black matrix. The dielectric layer covers the touch-sensing device layer. The active device array layer is disposed on the dielectric layer. The touch-sensing device layer and the active device array substrate are located at two opposite sides of the dielectric layer. The liquid crystal layer is disposed between the active device array layer and the opposite substrate. Moreover, a fabricating method of the touch display panel is also provided.

Abstract: An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.

Abstract: A display device includes a substrate, a driving circuit, an E-paper display layer and a protective coating layer. The driving circuit is arranged on the substrate. The E-paper display layer is disposed on and driven by the driving circuit. The protective coating layer is coated on and in contact with the E-paper display layer. The protective coating layer can provide protection and better optical performance, and it is advantageous to the manufacturing method to overcome the problems such as bubbles and low light transmittance occurring in the conventional manufacturing method.

Abstract: A touch panel includes a substrate, a transparent sensor electrode pattern, a patterned compensation electrode, a passivation layer, a transparent shielding electrode and at least one connection structure. The substrate has a surface and includes a sensor region and a peripheral region. The transparent sensor electrode pattern is disposed on the surface of the substrate and in the sensor region. The patterned compensation electrode is disposed on the surface of the substrate and in the peripheral region, and the patterned compensation electrode and the transparent sensor electrode pattern are electrically isolated. The passivation layer is disposed on the surface of the substrate, covers the transparent sensor electrode pattern, and at least partially exposes the patterned compensation electrode. The transparent shielding electrode is disposed on the passivation layer.

Abstract: An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate.

Abstract: A touch panel and fabricating method thereof are provided. The touch panel includes a substrate, a touch-sensing circuit, and fan-out traces. The substrate has a touch-sensing region and an adjoined peripheral region. The touch-sensing circuit is disposed on the touch-sensing region. The fan-out traces are disposed on the peripheral region and electrically connected to the touch-sensing circuit. Each fan-out trace includes a first conductive line, a first dielectric layer and a second conductive line. The first conductive line is disposed on the peripheral region. The first dielectric layer is disposed on the peripheral region to cover the first conductive line, and has at least one contact window located above the first conductive line. The second conductive line is disposed on the first dielectric layer, wherein the first and the second conductive line of the same fan-out trace have the same pattern and are electrically connected through the contact window.

Abstract: A semiconductor device including a substrate, a metal layer, an insulating layer, a semiconductor layer, a drain and a source is provided. The substrate has a surface and a first cavity. The metal layer is disposed on the substrate and covers the surface and inner-wall of the first cavity to define a second cavity corresponding to the first cavity. The insulating layer covers the metal layer and inner-wall of the second cavity to define a third cavity corresponding to the second cavity. The semiconductor layer exposes out a portion of the insulating layer and covers the inner-wall of the third cavity to define a fourth cavity corresponding to the third cavity. The drain and source are disposed on the semiconductor layer and covers a portion of the semiconductor layer and a portion of the insulating layer, in which the drain and source expose out the fourth cavity.

Abstract: A touch panel including a substrate, a light shielding layer, a touch sensing device layer, a protective layer, and at least one light transmission protrusion is provided. The substrate has a first surface and a second surface opposite to the first surface, wherein the first surface is divided into a visual region and a non-visual region. The light shielding layer is disposed in the non-visual region. The touch sensing device layer is disposed on the first surface of the substrate. The protective layer disposed on the first surface of the substrate covers the light shielding layer and the touch sensing device layer. The light transmission protrusion is disposed on the protective layer, and at least part of the light transmission protrusion is in the non-visual region. A light enters the light transmission protrusion from the second surface. A touch display device and an assembling method thereof are also provided.

Abstract: Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.

Abstract: A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.

Abstract: A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.

Abstract: A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.

Abstract: Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.

Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain to electrode on the substrate does not overlap the gate electrode.