Patents by Inventor Chia-Hung Chu
Chia-Hung Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230221645Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate While spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.Type: ApplicationFiled: February 27, 2023Publication date: July 13, 2023Inventors: Ming-Hsuan CHUANG, Po-Sheng LU, Shou-Wen KUO, Cheng-Yi HUANG, Chia-Hung CHU
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Patent number: 11626494Abstract: A semiconductor device structure according to the present disclosure includes a source feature and a drain feature, at least one channel structure extending between the source feature and the drain feature, a gate structure wrapped around each of the at least one channel structure, a semiconductor layer over the gate structure, a dielectric layer over the semiconductor layer, a doped semiconductor feature extending through the semiconductor layer and the dielectric layer to be in contact with the source feature, a metal contact plug over the doped semiconductor feature, and a buried power rail disposed over the metal contact plug.Type: GrantFiled: January 4, 2021Date of Patent: April 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Hung Chu, Sung-Li Wang, Shuen-Shin Liang, Hsu-Kai Chang, Ding-Kang Shih, Tsungyu Hung, Pang-Yen Tsai, Keng-Chu Lin
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Publication number: 20230095976Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Inventors: Shuen-Shin LIANG, Chun-I TSAI, Chih-Wei CHANG, Chun-Hsien HUANG, Hung-Yi HUANG, Keng-Chu LIN, Ken-Yu CHANG, Sung-Li WANG, Chia-Hung CHU, Hsu-Kai CHANG
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Publication number: 20230068965Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a layer of dielectric material over the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductor layer over and in contact with the S/D contact layer. The S/D contact layer can include a layer of platinum-group metallic material and a silicide layer formed between the substrate and the layer of platinum-group metallic material. A top width of a top portion of the layer of platinum-group metallic material can be greater than or substantially equal to a bottom width of a bottom portion of the layer of platinum-group metallic material.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Hung CHU, Shuen-Shin LIANG, Hsu-Kai CHANG, Tzu Pei CHEN, Kan-Ju LIN, Chien CHANG, Hung-Yi HUANG, Sung-Li WANG
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Publication number: 20230061022Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure and over the gate structure, a layer of organometallic material formed through the layer of dielectric material, and a trench conductor layer formed through the layer of dielectric material and in contact with the S/D contact structure and the gate structure. The layer of organometallic material can be between the layer of dielectric material and the trench conductor layer.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsu-Kai CHANG, Chia-Hung CHU, Shuen-Shin LIANG, Keng-Chu LIN, Pinyen LIN, Sung-Li WANG
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Patent number: 11592748Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.Type: GrantFiled: November 14, 2019Date of Patent: February 28, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hsuan Chuang, Po-Sheng Lu, Shou-Wen Kuo, Cheng-Yi Huang, Chia-Hung Chu
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Patent number: 11594609Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes forming a liner-free conductive structure on a cobalt conductive structure disposed on a substrate, depositing a cobalt layer on the liner-free conductive structure and exposing the liner-free conductive structure to a heat treatment. The method further includes removing the cobalt layer from the liner-free conductive structure.Type: GrantFiled: May 29, 2020Date of Patent: February 28, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shuen-Shin Liang, Chun-I Tsai, Chih-Wei Chang, Chun-Hsien Huang, Hung-Yi Huang, Keng-Chu Lin, Ken-Yu Chang, Sung-Li Wang, Chia-Hung Chu, Hsu-Kai Chang
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Patent number: 11581259Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.Type: GrantFiled: November 17, 2020Date of Patent: February 14, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Wei Chang, Chien-Shun Liao, Sung-Li Wang, Shuen-Shin Liang, Shu-Lan Chang, Yi-Ying Liu, Chia-Hung Chu, Hsu-Kai Chang
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Publication number: 20230030411Abstract: A fin field effect transistor device structure includes a fin structure formed over a substrate. The fin field effect transistor device structure also includes a source/drain epitaxial structure formed over the fin structure. The fin field effect transistor device structure also includes a contact structure with a concave top surface formed over the source/drain epitaxial structure. The fin field effect transistor device structure also includes a barrier layer conformally wrapped around the contact structure. The fin field effect transistor device structure also includes a via structure formed over the contact structure. The concave top surface of the contact structure is below the top surface of the barrier layer.Type: ApplicationFiled: October 17, 2022Publication date: February 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Hung CHU, Sung-Li WANG, Fang-Wei LEE, Jung-Hao CHANG, Mrunal Abhijith KHADERBAD, Keng-Chu LIN
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Publication number: 20230029002Abstract: The present disclosure describes a semiconductor device with a nitrided capping layer and methods for forming the same. One method includes forming a first conductive structure in a first dielectric layer on a substrate, depositing a second dielectric layer on the first conductive structure and the first dielectric layer, and forming an opening in the second dielectric layer to expose the first conductive structure and a portion of the first dielectric layer. The method further includes forming a nitrided layer on a top portion of the first conductive structure, a top portion of the portion of the first dielectric layer, sidewalls of the opening, and a top portion of the second dielectric layer, and forming a second conductive structure in the opening, where the second conductive structure is in contact with the nitrided layer.Type: ApplicationFiled: January 18, 2022Publication date: January 26, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Chin Chang, Lin-Yu Huang, Shuen-Shin Liang, Sheng-Tsung Wang, Cheng-Chi Chuang, Chia-Hung Chu, Tzu Pei Chen, Yuting Cheng, Sung-Li Wang
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Patent number: 11563083Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.Type: GrantFiled: January 29, 2021Date of Patent: January 24, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Wei Chang, Shuen-Shin Liang, Sung-Li Wang, Hsu-Kai Chang, Chia-Hung Chu, Chien-Shun Liao, Yi-Ying Liu
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Publication number: 20230016515Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.Type: ApplicationFiled: July 28, 2022Publication date: January 19, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Wei Chang, Chien-Shun Liao, Sung-Li Wang, Shuen-Shin Liang, Shu-Lan Chang, Yi-Ying Liu, Chia-Hung Chu, Hsu-Kai Chang
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Publication number: 20230013253Abstract: Provided are compositions and methods for stabilizing a transfection cocktail containing DNA-cationic polymer complexes for an extended time, while maintaining high transfection efficiency. Such stabilized transfection cocktail can be used to generate transfected cells that can produce, for example, rAAV vectors on a large scale without impacting the key attributes of the virus production, such as, titer, DNA packaged rAAV particle fraction, and rAAV vector purification profile.Type: ApplicationFiled: December 16, 2020Publication date: January 19, 2023Inventors: Saurabh Kant Bhardwaj, Chia Hung Chu
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Publication number: 20230016100Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes depositing an etch stop layer on a cobalt contact disposed on a substrate, depositing a dielectric on the etch stop layer, etching the dielectric and the etch stop layer to form an opening that exposes a top surface of the cobalt contact, and etching the exposed top surface of the cobalt contact to form a recess in the cobalt contact extending laterally under the etch stop layer. The method further includes depositing a ruthenium metal to substantially fill the recess and the opening, and annealing the ruthenium metal to form an oxide layer between the ruthenium metal and the dielectric.Type: ApplicationFiled: July 28, 2022Publication date: January 19, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO.,LTD.Inventors: Hsu-Kai CHANG, Keng-Chu LIN, Sung-Li WANG, Shuen-Shin LIANG, Chia-Hung CHU
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Publication number: 20230009981Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.Type: ApplicationFiled: February 16, 2022Publication date: January 12, 2023Inventors: Cheng-Wei CHANG, Chia-Hung CHU, Hsu-Kai CHANG, Sung-Li WANG, Kuan-Kan HU, Shuen-Shin LIANG, Kao-Feng LIN, Hung Pin LU, Yi-Ying LIU, Chuan-Hui SHEN
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Publication number: 20230012147Abstract: The present disclosure describes a method to form a semiconductor device with backside contact structures. The method includes forming a semiconductor device on a first side of a substrate. The semiconductor device includes a source/drain (S/D) region. The method further includes etching a portion of the S/D region on a second side of the substrate to form an opening and forming an epitaxial contact structure on the S/D region in the opening. The second side is opposite to the first side. The epitaxial contact structure includes a first portion in contact with the S/D region in the opening and a second portion on the first portion. A width of the second portion is larger than the first portion.Type: ApplicationFiled: July 9, 2021Publication date: January 12, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Hung CHU, Ding-Kang SHIH, Keng-Chu LIN, Pang-Yen TSAI, Sung-Li WANG, Shuen-Shin LIANG, Tsungyu HUNG, Hsu-Kai CHANG
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Patent number: 11527190Abstract: An example computing device includes: a display to display a color calibration pattern; a touchpad to receive input for the computing device, the touchpad having a reflective layer to reflect the color calibration pattern; a color sensor to detect the reflected color calibration pattern from the touchpad; a processor interconnected with the color sensor and the display, the processor to calibrate a color output of the display based on the color calibration pattern detected at the color sensor.Type: GrantFiled: March 31, 2022Date of Patent: December 13, 2022Assignee: Hewlett-Packard Development Company, L.P.Inventors: Chia-Wen Chuang, Chia-Hung Chu, Chih-Chen Hung, Wan-Chieh Lu, Hung-Ming Chen
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Patent number: 11521929Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.Type: GrantFiled: January 5, 2021Date of Patent: December 6, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shuen-Shin Liang, Chun-I Tsai, Chih-Wei Chang, Chun-Hsien Huang, Hung-Yi Huang, Keng-Chu Lin, Ken-Yu Chang, Sung-Li Wang, Chia-Hung Chu, Hsu-Kai Chang
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Publication number: 20220384601Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsu-Kai CHANG, Jhih-Rong HUANG, Yen-Tien TUNG, Chia-Hung CHU, Shuen-Shin LIANG, Tzer-Min SHEN, Pinyen LIN, Sung-Li WANG
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Publication number: 20220375868Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Cheng-Wei CHANG, Chia-Hung CHU, Kao-Feng LIN, Hsu-Kai CHANG, Shuen-Shin LIANG, Sung-Li WANG, Yi-Ying LIU, Po-Nan YEH, Yu Shih WANG, U-Ting CHIU, Chun-Neng LIN, Ming-Hsi YEH