Abstract: The instant disclosure provides a light-emitting module and a method of manufacturing a single light-emitting structure. The light-emitting module includes two identical light-emitting structures disposed on the same plane. One of the two light-emitting structures disposed on the plane is rotated by 180 degrees relative to the other light-emitting structure, and the two light-emitting structures are connected to each other. Each light-emitting structure includes a base, a conducting element, a light-emitting element and an encapsulation element. The conducting element includes a plurality of conductors separated from each other and passing through the base body, where the number of the conductors is N and N>1. The light-emitting element includes at least one light-emitting chip electrically connected between at least two of the conductors. The encapsulation element includes a transparent encapsulation body disposed on the base to cover the conducting element and the light-emitting element.

Abstract: The instant disclosure provides a light-emitting module and a method of manufacturing a single light-emitting structure. The light-emitting module includes two identical light-emitting structures disposed on the same plane. One of the two light-emitting structures disposed on the plane is rotated by 180 degrees relative to the other light-emitting structure, and the two light-emitting structures are connected to each other. Each light-emitting structure includes a base, a conducting element, a light-emitting element and an encapsulation element. The conducting element includes a plurality of conductors separated from each other and passing through the base body, where the number of the conductors is N and N>1. The light-emitting element includes at least one light-emitting chip electrically connected between at least two of the conductors. The encapsulation element includes a transparent encapsulation body disposed on the base to cover the conducting element and the light-emitting element.

Abstract: A method comprises dispensing a first solvent on a semiconductor substrate; dispensing a first layer of a high-viscosity polymer on the first solvent; dispensing a second solvent on the first layer of high-viscosity polymer; and spinning the semiconductor substrate after dispensing the second solvent, so as to spread the high-viscosity polymer to a periphery of the semiconductor substrate.

Abstract: A method includes rotating a wafer at a first speed for a first time duration. The wafer is rotated at a second speed that is lower than the first speed for a second time duration after the first time duration. The wafer is rotated at a third speed that is higher than the second speed for a third time duration after the second time duration. A photoresist is dispensed on the wafer during the first time duration and at least a portion of a time interval that includes the second time duration and the third time duration.

Abstract: A circuit, a multiple power domain circuit, and a method are disclosed. An embodiment is a circuit including an input circuit having a first output and a second output, the input circuit being coupled to a first power supply voltage, and a level-shifting circuit having a first input coupled to the first output of the input circuit and a second input coupled to the second output of the input circuit, the level-shifting circuit being coupled to a second power supply voltage. The circuit further includes a first transistor coupled between a first node of the level-shifting circuit and the second power supply voltage, and a control circuit having an output coupled to a gate of the first transistor, the control circuit being coupled to the second power supply voltage.

Abstract: The instant disclosure provides a light-emitting module and a method of manufacturing a single light-emitting structure. The light-emitting module includes two identical light-emitting structures disposed on the same plane. One of the two light-emitting structures disposed on the plane is rotated by 180 degrees relative to the other light-emitting structure, and the two light-emitting structures are connected to each other. Each light-emitting structure includes a base, a conducting element, a light-emitting element and an encapsulation element. The conducting element includes a plurality of conductors separated from each other and passing through the base body, where the number of the conductors is N and N>1. The light-emitting element includes at least one light-emitting chip electrically connected between at least two of the conductors. The encapsulation element includes a transparent encapsulation body disposed on the base to cover the conducting element and the light-emitting element.

Abstract: A device includes a first power node, a second power node, a first input node, a second input node, a protected circuit, and a switch circuit. The protected circuit is coupled between the first power node and the second power node, and the protected circuit is further coupled with the second input node. The switch circuit is coupled with the first power node, the second power node, the first input node, and the second input node. The switch circuit is configured to electrically decouple the first input node and the second input node after (a) the first power node is floating or electrically coupled to the second power node and (b) a voltage level at the first input node is greater than a voltage level at the second power node by a predetermined voltage value.

Abstract: An LED substrate structure has a substrate and a conducting portion. The substrate has a bottom surface and two opposite first lateral surfaces connected with the bottom surface. The bottom surface has the conducting portion formed thereon, and the conducting portion has a first cutting segment located on a contact border defined between one of the two first lateral surfaces and the bottom surface. The conducting portion further has an expansion region connected with the first cutting segment. The length of the first cutting segment is shorter than any segment taken on the expansion region parallel thereto.

Abstract: A method comprises dispensing a first solvent on a semiconductor substrate; dispensing a first layer of a high-viscosity polymer on the first solvent; dispensing a second solvent on the first layer of high-viscosity polymer; and spinning the semiconductor substrate after dispensing the second solvent, so as to spread the high-viscosity polymer to a periphery of the semiconductor substrate.

Abstract: An LED substrate structure has a substrate and a conducting portion. The substrate has a bottom surface and two opposite first lateral surfaces connected with the bottom surface. The bottom surface has the conducting portion formed thereon, and the conducting portion has a first cutting segment located on a contact border defined between one of the two first lateral surfaces and the bottom surface. The conducting portion further has an expansion region connected with the first cutting segment. The length of the first cutting segment is shorter than any segment taken on the expansion region parallel thereto.

Abstract: An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.

Abstract: An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.