Abstract: Embodiments disclosed herein include optoelectronic systems and methods of forming such systems. In an embodiment, an optoelectronic system comprises a first substrate, a second substrate over the first substrate, and a micro-ring resonator (MRR) over the second substrate. In an embodiment, a heater is integrated into the MRR, a cladding is over the MRR, and an opening is through the first substrate and the second substrate to expose a bottom surface of the MRR.

Abstract: An electronic device may include a photonic integrated circuit (PIC) coupled with a substrate. The PIC may communicate a photonic signal with one or more optical fibers. The PIC may process the photonic signal into an electronic signal. The PIC may extend between a first end and a second end. An electronic integrated circuit (EIC) may be coupled with the substrate. The EIC may communicate with the PIC. The EIC may transmit the electronic signal to the PIC. The EIC may receive the electronic signal from the PIC. The electronic device may include a lens assembly. The lens assembly may be coupled with the first end of the PIC. In an example, optical interconnects of the PIC are aligned with the lens assembly such that the lens assembly is configured to transmit the photonic signal communicated between PIC and the optical fibers.

Abstract: An electronic device may include a photonic integrated circuit (PIC) coupled with a substrate. The PIC may communicate a photonic signal with one or more optical fibers. The PIC may process the photonic signal into an electronic signal. The electronic device may include an electronic integrated circuit (EIC) coupled with the substrate. The EIC may communicate with the PIC. The EIC may transmit the electronic signal to the PIC. The EIC may receive the electronic signal from the PIC. The electronic device may include a lens assembly. The lens assembly may include at least one gradient refractive index (GRIN) lens.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a laser package. In selected examples, the laser package can include a substrate having a substrate front surface and defining a cavity that extends into the substrate front surface. The laser package can further include a photonic integrated circuit (PIC) attached to the substrate within the cavity at a first surface of the PIC, and laser circuitry communicably coupled to a second surface of the PIC opposite the first surface.

Abstract: Embodiments include semiconductor packages and a method to form such packages. A semiconductor package includes first, second, and third microelectronic devices on a package substrate. The first microelectronic device has a top surface substantially coplanar to a top surface of the second microelectronic device. The third microelectronic device has a top surface above the top surfaces of the first and second microelectronic devices. The semiconductor package includes a first conductive layer on the first and second microelectronic devices, and a second conductive layer on the third microelectronic device. The second conductive layer has a thickness less than a thickness of the first conductive layer, and a top surface substantially coplanar to a top surface of the first conductive layer. The semiconductor includes thermal interface materials on the first and second conductive layers. The first and second conductive layers are comprised of copper, silver, boron nitride, or graphene.

Abstract: Integrated circuit assemblies, electronic systems, and methods for fabricating the same are disclosed. An integrated circuit assembly is formed by thermally contacting at least two integrated circuit packages to opposite sides of a shared heat dissipation device. In one embodiment, the at least two integrated circuit packages are electrically attached to an electronic card to form an intermediate integrated circuit assembly. In a further embodiment, the integrated circuit assembly includes at least one intermediate integrated circuit assembly electrically attached to an electronic board.

Abstract: A microprocessor mounting apparatus comprising a microprocessor socket on a printed circuit board (PCB) and a bolster plate surrounding a perimeter of the microprocessor socket. The bolster plate has a first surface adjacent to the PCB, and a second surface opposite the first surface. A heat dissipation device is on the second surface of the bolster plate. The heat dissipation interface is thermally coupled to the microprocessor socket.

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

Abstract: An integrated circuit (IC) socket comprising a housing with a land side, an opposing die side, and sidewalls around a perimeter of the housing. The housing comprises a first dielectric. A plurality of socket pins extends from the land side of the housing through socket pin holes in the housing over the die side of the housing. A second dielectric is within the interstitial regions between the socket pins and sidewalls of the socket pin holes. A frame structure extends around at least a portion of the perimeter of the housing, and a mesh structure is embedded within the first dielectric. The mesh structure has plurality of mesh filaments extending between the plurality of socket pin holes and coupled to the frame structure.

Abstract: Aspects of the embodiments are directed to an opto-electronic device and methods of using the same. The opto-electronic device can include a processing device and a photonic device. The photonic device can include an optical demultiplexer; a collimating lens optically coupled to the optical demultiplexer and positioned to receive light from the optical demultiplexer, the collimating lens to collimate light received from the optical demultiplexer; a photodetector comprising a photosensitive element, the photosensitive element to convert received light into an electrical signal; and a focusing lens optically coupled to the photodetector, the focusing lens to receive light and focus the light towards the photosensitive element.

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

Abstract: A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).

Abstract: Embodiments include an electronic system and methods of forming an electronic system. In an embodiment, the electronic system may include a package substrate and a die coupled to the package substrate. In an embodiment, the electronic system may also include an integrated heat spreader (IHS) that is coupled to the package substrate. In an embodiment the electronic system may further comprise a thermal interface pad between the IHS and the die. In an embodiment the die is thermally coupled to the IHS by a liquid metal thermal interface material (TIM) that contacts the thermal interface pad.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to thermally and/or electrically coupling a thermal die to the surface of a photonic integrated circuit (PIC) within an open cavity in a substrate, where the thermal die is proximate to a laser on the PIC. Other embodiments may be described and/or claimed.

Abstract: An electronic assembly, such as an integrated circuit package, may be formed comprising a package substrate and a photonic integrated circuit device attached thereto, wherein the package substrate includes a heat dissipation structure disposed therein. A back surface of the photonic integrated circuit device may thermally coupled to the heat dissipation structure within the package substrate for the removal of heat from the photonic integrated circuit device, which allows for access to an active surface of the photonic integrated circuit device for the attachment of fiber optic cables and eliminates the need for a heat dissipation device to be thermally attached to the active surface of the photonic integrated circuit device.

Abstract: The removal of heat from silicon photonic integrated circuit devices is a significant issue in integrated circuit packages. As presented herein, the removal of heat may be facilitated with an optically compatible thermal interface structure on the silicon photonic integrated circuit device. These thermal interface structures may include stack-up designs, comprising an optical isolation structure and a thermal interface material, which reduces light coupling effects, while effectively conducting heat from the silicon photonic integrated circuit device to a heat dissipation device, thereby allowing effective management of the temperature of the silicon photonic integrated circuit device.

Abstract: Microelectronic assemblies that include a cooling channel, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface, a die having a surface, and a fluidic channel between the surface of the die and the surface of the package substrate, wherein a top surface of the fluidic channel is defined by the surface of the die and a bottom surface of the fluidic channel is defined by the surface of the package substrate. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a surface; and an interposer having a fluidic channel between the surface of the die and the surface of the package substrate.

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

Abstract: Embodiments include semiconductor packages and cooling semiconductor packaging systems. A semiconductor package includes a second die on a package substrate, first dies on the second die, conductive bumps between the first dies and the second die, a cold plate and a manifold over the first dies, second die, and package substrate, and first openings in the manifold. The first openings are fluidly coupled through the conductive bumps. The semiconductor package may include a first fluid path through the first openings of the manifold, where a first fluid flows through the first fluid path. The semiconductor package may further include a second fluid path through second openings of the cold plate, where a second fluid flows through the second fluid path, and where the first and second fluids of the first and second fluid paths cool heat providing surfaces of the first dies, the second die, or the package substrate.

Abstract: Disclosed herein are thermal assemblies for multi-chip packages (MCPs), as well as related methods and devices. For example, in some embodiments, a thermal assembly for an MCP may include a heat pipe having a ring shape.