Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.

Abstract: A tracking system is disclosed. The tracking system comprises a head-mounted display (HMD) worn on a head of a user and configured to virtualize a body movement of the user in a virtual environment; and a plurality of sensors worn on feet of the user configured to determine body information of the user according to the body movement of the user, and transmit the determined body information to the HMD; wherein the HMD virtualizes the body movement of the user according to the determined body information; wherein the body information is related to a plurality of mutual relationships between the plurality of sensors and the HMD.

Abstract: A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

Abstract: A middle layer removal method is provided. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. The method includes forming a mask layer over the spacer layer, the mask layer including a first layer, a second layer over the first layer, and a third layer over the second layer. The method also includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer to form an opening to expose a bottom surface of the second layer. The method further includes removing the second layer using a wet etchant.

Abstract: A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.

Abstract: A semiconductor device includes a substrate having at least a trench formed therein. A conductive material fills a lower portion of the trench. A barrier layer is between the conductive material and the substrate. An insulating layer is in the trench and completely covers the conductive material and the barrier layer, wherein a portion of the insulating layer covering the barrier layer has a bird's peak profile.

Abstract: A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.

Abstract: Aspects of the disclosure provide a method. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. Then, the method includes forming a mask layer over the spacer layer. The mask layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. Further, the method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer with a dry etching process using the third layer as an etch mask to form an opening that exposes a portion of the spacer layer. Then, the method includes removing the second layer using a wet etchant before a formation of a backfill material layer in the opening and over the first layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner, a second liner, and a third liner in the first trench and the second trench; performing a surface treatment process to lower stress of the third liner; and planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.

Abstract: A semiconductor device and a method of forming the same are disclosed. First, a substrate having a main surface is provided. At least a trench is formed in the substrate. A barrier layer is formed in the trench and a conductive material is formed on the barrier layer and filling up the trench. The barrier layer and the conductive material are then recessed to be lower than the upper surface of the substrate. After that, an oxidation process is performed to oxidize the barrier layer and the conductive material thereby forming an insulating layer.

Abstract: A method of tracking an ankle of a user in an interactive system comprises obtaining a first ankle information and a head information of the user; determining a second ankle information according to the first ankle information; and calibrating the second ankle information according to the first ankle information and the head information; wherein the first ankle information is a 3 Dof (degrees of freedom) information; the second ankle information is a 6 Dof information; the head information is the 6 DoF information.

Abstract: A camera module, for a head-mounted display (HMD), includes a first optical module for tracking a hand motion of a user; a second optical module for reconstructing a hand gesture or a step of the user and a space; a third optical module for establishing a three-dimensional (3D) virtual object; and a control unit for integrating with the first optical module, the second optical module and the third optical module to virtualize a body behavior of the user; wherein the camera module is rotatable to maximize a tracking range.

Abstract: A recommendation method applied in a reality presenting device is disclosed. The reality presenting device includes a first sensing module, a second sensing module and a processing unit. The recommendation method includes: the first sensing module sensing a user-related information corresponding to a user who wears the reality presenting device; the second sensing module sensing an environment-related information corresponding to an environment which the user experiences; and the processing unit generating and presenting a recommended object to the user according to the user-related information or the environment-related information.

Abstract: A tracking method of a controller is provided. The controller comprises an inertial measurement unit (IMU) for generating a first controller information in an interactive system, and a plurality of identification dots are arranged on a surface of the controller. The tracking method includes obtaining a first image having the controller and at least one of the identification dots; determining a second controller information according to the first controller information; and calibrating the second controller information according to the first image; wherein the first controller information is a 3 degrees of freedom (3Dof) information, and the second controller information is a 6Dof information.

Abstract: A tracking system is disclosed. The tracking system comprises a head-mounted display (HMD) worn on a head of a user and configured to virtualize a body movement of the user in a virtual environment; and a plurality of sensors worn on feet of the user configured to determine body information of the user according to the body movement of the user, and transmit the determined body information to the HMD; wherein the HMD virtualizes the body movement of the user according to the determined body information; wherein the body information is related to a plurality of mutual relationships between the plurality of sensors and the HMD.

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

Abstract: Mycobacterial-specific biomarkers and methods of using such biomarkers for diagnosis of mycobacterial infection in a mammal are disclosed.

Abstract: Aspects of the disclosure provide a method. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. Then, the method includes forming a mask layer over the spacer layer. The mask layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. Further, the method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer with a dry etching process using the third layer as an etch mask to form an opening that exposes a portion of the spacer layer. Then, the method includes removing the second layer using a wet etchant before a formation of a backfill material layer in the opening and over the first layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner, a second liner, and a third liner in the first trench and the second trench; performing a surface treatment process to lower stress of the third liner; and planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.