Abstract: A non-human animal disease model for hepatitis B virus-associated liver disease is disclosed. The animal disease model is transduced with a hepatitis B virus genome in the liver cells thereof and exhibits the following symptoms: hepatitis B viral particles and hepatitis B viral DNA in the serum, hepatitis B virus (HBV) envelope and HBV e proteins in the serum, expression of HBV core and HBV envelope proteins in the liver but not in the kidney, heart, lung, brain, pancreas, spleen, stomach or intestine tissues. The animal disease model may develop hepatocellular carcinoma, exhibiting an elevated level of alanine aminotransferase as compared to a control animal without the hepatitis B virus genome in the liver cells thereof, and liver pathological symptoms such as tumor nodules, dysplasia, inflammatory infiltrates, necrosis and fibrosis.

Abstract: A phase change memory cell with a single element phase change thin film layer; and a first electrode and a second electrode coupled to the single element phase change thin film layer. A current flows from the first electrode to the single element phase change thin film layer, and through to the second electrode. The single element phase change thin film layer includes a single element phase change material. The single element phase change thin film layer can be less than 5 nanometers thick. The temperature of crystallization of the single element phase change material can be controlled by its thickness. In one embodiment, the single element phase change thin film layer is configured to be amorphous at room temperature (25 degrees Celsius). In one embodiment, the single element phase change thin film layer is comprised of Antimony (Sb).

Abstract: A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of “non-constant” concentration profiles for additives enables doping the different zones with different materials and concentrations, according to the different crystallographic, thermal and electrical conditions, and different phase transition conditions.

Abstract: A wound healing composition comprising a class of polypeptide compounds having a polypeptide chain with 5 to 120 amino acid units per chain. The composition includes a pharmaceutical medium to carry the polypeptide compound, such as an aqueous solution, suspension, dispersion, salve, ointment, gel, cream, lotion, spray or paste. Additionally, a method of applying a wound healing composition comprising a class of polypeptide compounds having a polypeptide chain with 5 to 120 amino acid units per chain in a concentration of from about 1 ?g/ml to about 100 ?g/ml for a time sufficient to heal the wound is disclosed.

Abstract: A memory device is provided. The memory device includes a memory array; a first circuit electrically connected to the memory array, and causing the memory array to be operated in a first mode; and a second circuit electrically connected to the memory array, and causing the memory array to be operated in a second mode.

Abstract: A nuclear plant is provided with a pipe-passivating alkali-injecting device including an alkali-injecting tank, an actuator, a counter-balance valve, a pressure gauge, exhaust valves and switching valves. The actuator is connected to the alkali-injecting tank via a first pipe. The counter-balance valve is connected to the actuator via a second pipe and connected to the alkali-injecting tank via a third pipe. The pressure gauge is provided between the actuator and the counter-balance valve and connected to the second pipe. The exhaust valves are connected to the first and second pipes, and so are the switching valves. The alkali-injecting tank, the actuator and the counter-balance valve are used together to expel gases from the pipes while injecting alkali, thus effectively avoiding feedback of liquid in the nuclear plant, transmitting pure alkali in the pipes, and reducing damage to the pipes.

Abstract: An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode.

Abstract: A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.

Abstract: A gate driving circuit of a display panel including a plurality of shift register sets coupled in series is provided. Every shift register set includes a shift register unit and a transistor coupled therewith. The shift register units receive a gate timing signal and an inverted gate timing signal, and one of a first level shift register unit and a last level shift register unit further receives a threshold driving signal. The shift register units respectively output a plurality of gate driving signals sequentially according to the threshold driving signal, the gate timing signal and the inverted gate timing signal. A gate and a first source/drain of each transistor are coupled to receive a gate controlling signal, and a second source/drain of each transistor is coupled to the corresponding shift register unit to output one of the gate driving signals.

Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

Abstract: Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.

Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and fowling at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

Abstract: A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.

Abstract: A memory cell described herein includes a memory element comprising programmable resistance memory material overlying a conductive contact. An insulator element includes a pipe shaped portion extending from the conductive contact into the memory element, the pipe shaped portion having proximal and distal ends and an inside surface defining an interior, the proximal end adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end to the distal end, the bottom electrode having a top surface contacting the memory element adjacent the distal end at a first contact surface. A top electrode is separated from the distal end of the pipe shaped portion by the memory element and contacts the memory element at a second contact surface, the second contact surface having a surface area greater than that of the first contact surface.

Abstract: A wound healing composition comprising a class of polypeptide compounds having a polypeptide chain with 5 to 120 amino acid units per chain. The composition includes a pharmaceutical medium to carry the polypeptide compound, such as an aqueous solution, suspension, dispersion, salve, ointment, gel, cream, lotion, spray or paste. Additionally, a method of applying a wound healing composition comprising a class of polypeptide compounds having a polypeptide chain with 5 to 120 amino acid units per chain in a concentration of from about 1 ?g/ml to about 100 ?g/ml for a time sufficient to heal the wound is disclosed.

Abstract: A memory cell described herein includes a memory element comprising programmable resistance memory material overlying a conductive contact. An insulator element includes a pipe shaped portion extending from the conductive contact into the memory element, the pipe shaped portion having proximal and distal ends and an inside surface defining an interior, the proximal end adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end to the distal end, the bottom electrode having a top surface contacting the memory element adjacent the distal end at a first contact surface. A top electrode is separated from the distal end of the pipe shaped portion by the memory element and contacts the memory element at a second contact surface, the second contact surface having a surface area greater than that of the first contact surface.

Abstract: A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.

Abstract: A liquid-crystal-display (LCD) and a display panel thereof are provided. The display panel includes a plurality of pixel row units and a plurality of switch units. Each pixel row unit is connected between a scan line and a potential switch line. The first end of each switch unit receives the common voltage provided by the display panel, and the second end of each switch unit is connected to its corresponding potential switch line. Thus, not only the flicker-noise of the display panel is reduced, but also the display-quality of the LCD is promoted.

Abstract: An LCD includes a PWB, a FPC, and a display panel. The PWB includes a level shift circuit and a power-off discharge circuit. The display panel includes a gate driving circuit and a TFT array. The power-off discharge circuit can electrically connects a gate high voltage end to a gate low voltage end so as to drive the gate driving circuit to turn on all TFTs of the TFT array.