Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: A lifting type electronic device includes a first body, a second body and a lifting mechanism. The second body includes a fixing plate and a moving plate. The lifting mechanism is connected between the fixing plate and the moving plate and is adapted to move the moving plate between the initial position and the lifted-up position. The lifting mechanism includes a first moving member, a pressing member, at least one second moving member, and at least one elastic member.

Abstract: A portable electronic device includes a first body and a second body. The second body includes a processing unit, and a first touch panel, a second touch panel, a keyboard and at least one detecting module electrically connected to the processing unit, respectively. The keyboard is slidably disposed above the second touch panel, and the detecting module is adapted to detect a position of the keyboard. When the keyboard is located at a first position, the keyboard module covers the second touch panel, and the detecting module transmits a first signal to the processing unit so that the first touch panel is turned on. When the keyboard is located at a second position, the keyboard exposes the second touch panel, and the detecting module transmits a second signal to the processing unit so that the first touch panel is turned off. A touch panel controlling method of the portable electronic device is further provided.

Abstract: A dual-axis hinge assembly including a first rotating shaft, a second rotating shaft, torque components, a rotating shaft sleeve, a first bracket, a second bracket, and two bracket sleeves is provided. The second rotating shaft is disposed side-by-side to the first rotating shaft. The torque components are disposed at the first rotating shaft and the second rotating shaft. The rotating shaft sleeve covers the first rotating shaft, the second rotating shaft, and the torque components. The first bracket is connected to the first rotating shaft. The second bracket is connected to the second rotating shaft. The two bracket sleeves are respectively coaxial with the first rotating shaft and the second rotating shaft and respectively cover the first bracket and the second bracket. The two bracket sleeves and the rotating shaft sleeve are sleeved together. The invention further provides a plurality of electronic devices.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

Abstract: An electronic device includes a base, a pivoting component, a display and a supporting component. The base has an upper side and a lower side and is suitable to be placed on a surface. The pivoting component is pivotally connected to a rear end of the base. The display is connected to the pivoting component and suitable to be unfolded or closed at the upper side of the base by the pivoting of the pivoting component. The supporting component is pivotally connected to the lower side of the base and suitable to be unfolded or closed at the lower side of the base. When the display is unfolded on the base, an end of the display slides along the supporting component, and the supporting component is unfolded on the base and supports the pivoting component and the rear end of the base away from the surface.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: A buffer circuit includes a transistor cascode circuit, a latch circuit, a first transistor, a second transistor, and a voltage generator. The transistor cascode circuit is biasing at a first voltage. The latch circuit is biasing at a second voltage, whose voltage level is negative. The first transistor and the second transistor are coupling between the transistor cascode circuit and the latch circuit, and a gate of the first transistor is coupled to a gate of the second transistor. The voltage generator provides a biasing voltage to the gate of the first transistor and adjusts a voltage level of the biasing voltage dynamically according to a voltage level of the second voltage. The biasing voltage is at a first level when the buffer circuit is initially turned on, and the biasing voltage is at a second level when the buffer circuit enters the steady state.

Abstract: The present disclosure provides a peptide for promoting cell migration and/or skin wound healing, including an IL-6-derived peptide, which is designed within the region of the sequence of SEQ ID NO. 1 and of which the sequence includes the sequence of SEQ ID NO. 2, in which the IL-6-derived peptide has about 6-50 amino acids.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.