Patents by Inventor Chien-Chang Huang
Chien-Chang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20210091125Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.Type: ApplicationFiled: November 30, 2020Publication date: March 25, 2021Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
-
Patent number: 10868053Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.Type: GrantFiled: August 15, 2019Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
-
Publication number: 20200199585Abstract: A tracer particle is provided. The tracer particle includes: a core structure; a nucleic acid molecule immobilized on the core structure; and a shell layer covering the core structure and the nucleic acid molecule; wherein the core structure has a first porosity, the shell layer has a second porosity, and the first porosity is greater than the second porosity.Type: ApplicationFiled: December 11, 2019Publication date: June 25, 2020Applicant: Industrial Technology Research InstituteInventors: Kai-Chun FAN, Yin-Lung HAN, Pei-Jyuan GAO, Yong-Yang LIN, Chieh-Lun CHENG, Chien-Chang HUANG, Yung-Ho CHANG, Chia-Long LIN, I-Son NG, Bo-Han CHEN
-
Patent number: 10553628Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.Type: GrantFiled: September 11, 2018Date of Patent: February 4, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
-
Publication number: 20190371835Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.Type: ApplicationFiled: August 15, 2019Publication date: December 5, 2019Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
-
Patent number: 10438980Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.Type: GrantFiled: May 31, 2017Date of Patent: October 8, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
-
Publication number: 20190131334Abstract: A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.Type: ApplicationFiled: December 13, 2018Publication date: May 2, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Nan TU, Yu-Lung YEH, Hsing-Chih LIN, Chien-Chang HUANG, Shih-Shiung CHEN
-
Patent number: 10204959Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.Type: GrantFiled: December 26, 2014Date of Patent: February 12, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chien-Chang Huang, Li-Ming Sun, Chien Nan Tu, Yi-Ping Pan, Yu-Lung Yeh
-
Publication number: 20190027517Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.Type: ApplicationFiled: September 11, 2018Publication date: January 24, 2019Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
-
Patent number: 10164141Abstract: A semiconductor device includes a carrier wafer, a device layer, a first semiconductor layer and a second semiconductor layer. The device layer is disposed on the carrier wafer. The first semiconductor layer is disposed on the device layer, and has a first side face and a second side face opposite to the first side face, in which the first side face is adjacent to the device layer. The second semiconductor layer is disposed on the first semiconductor layer, and has a third side face and a fourth side face opposite to the third side face, in which the fourth side face of the second semiconductor layer is adjacent to the second side face of the first semiconductor layer, and the second semiconductor layer is implanted and annealed.Type: GrantFiled: July 15, 2014Date of Patent: December 25, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Nan Tu, Yu-Lung Yeh, Hsing-Chih Lin, Chien-Chang Huang
-
Patent number: 10157944Abstract: A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.Type: GrantFiled: May 3, 2017Date of Patent: December 18, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Chang Huang, Wei-Tung Huang, Yen-Hsiang Hsu, Yu-Lung Yeh, Chun-Chieh Fang
-
Patent number: 10157946Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.Type: GrantFiled: October 27, 2017Date of Patent: December 18, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Nan Tu, Yu-Lung Yeh, Hsing-Chih Lin, Chien-Chang Huang, Shih-Shiung Chen
-
Publication number: 20180350853Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.Type: ApplicationFiled: May 31, 2017Publication date: December 6, 2018Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
-
Patent number: 9950623Abstract: A vehicular projection system includes plural information collectors, a time-division multiplexing device and a projection mechanism. The plural information collectors are used for outputting driving information. The time-division multiplexing device includes plural wireless transmission modules. The time-division multiplexing device determines the transmitting sequence of plural information collectors according to the receiving sequence of wireless transmission requests from the plural information collectors. Moreover, the time-division multiplexing device determines the suitable wireless transmission modules according to the file properties of the driving information and the wireless transmission capabilities of the plural information collectors. Since the plural information collectors can simultaneously transmit driving information to the time-division multiplexing device through different wireless transmission modules, the wireless transmission efficiency is enhanced.Type: GrantFiled: October 24, 2016Date of Patent: April 24, 2018Assignee: PRIMAX ELECTRONICS LTD.Inventors: Chien-Chang Huang, Ying-Che Tseng
-
Publication number: 20180053800Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.Type: ApplicationFiled: October 27, 2017Publication date: February 22, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Nan TU, Yu-Lung YEH, Hsing-Chih LIN, Chien-Chang HUANG, Shih-Shiung CHEN
-
Publication number: 20180037118Abstract: A vehicular projection system includes plural information collectors, a time-division multiplexing device and a projection mechanism. The plural information collectors are used for outputting driving information. The time-division multiplexing device includes plural wireless transmission modules. The time-division multiplexing device determines the transmitting sequence of plural information collectors according to the receiving sequence of wireless transmission requests from the plural information collectors. Moreover, the time-division multiplexing device determines the suitable wireless transmission modules according to the file properties of the driving information and the wireless transmission capabilities of the plural information collectors. Since the plural information collectors can simultaneously transmit driving information to the time-division multiplexing device through different wireless transmission modules, the wireless transmission efficiency is enhanced.Type: ApplicationFiled: October 24, 2016Publication date: February 8, 2018Inventors: Chien-Chang Huang, Ying-Che Tseng
-
Patent number: 9818779Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.Type: GrantFiled: August 14, 2014Date of Patent: November 14, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Nan Tu, Yu-Lung Yeh, Hsing-Chih Lin, Chien-Chang Huang, Shih-Shiung Chen
-
Publication number: 20170236864Abstract: A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.Type: ApplicationFiled: May 3, 2017Publication date: August 17, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Chang HUANG, Wei-Tung HUANG, Yen-Hsiang HSU, Yu-Lung YEH, Chun-Chieh FANG
-
Patent number: 9721983Abstract: A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.Type: GrantFiled: May 15, 2015Date of Patent: August 1, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Chang Huang, Chien-Nan Tu, Li-Ming Sun, Yu-Lung Yeh, Yi-Ping Pan
-
Patent number: 9666619Abstract: A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.Type: GrantFiled: April 16, 2015Date of Patent: May 30, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Chang Huang, Wei-Tung Huang, Yen-Hsiang Hsu, Yu-Lung Yeh, Chun-Chieh Fang