Abstract: A test device and method for detecting alignment of active areas and memory cell structures in DRAM devices with vertical transistors. In the test device, parallel first and second memory cell structures disposed in the scribe line region, each has a deep trench capacitor and a transistor structure. An active area is disposed between the first and second memory cell structures. The active area overlaps the first and second memory cell structures by a predetermined width. First and second conductive pads are disposed on both ends of the first memory cell structures respectively, and third and fourth conductive pads are disposed on both ends of the first memory cell structures respectively.

Abstract: An active pixel element of an image sensor array includes a sensor, a transfer transistor, a reset transistor, and a source follower. There is a column-read transistor positioned in each column of the image sensor array for controlling the read signals. When the sensor is reset, all column-read transistors are turned off while the transfer transistor and the reset transistor are turned on. When a reset signal is read and all column-read transistors are still turned off, the reset transistor is turned on so as to generate the same reset reference voltage when the sensor is reset. In this way, there is no difference in reset reference voltage between each column and between each row for the image sensor array.

Abstract: This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.

Abstract: A method for discriminating a disc includes the steps of: detecting that the disc is inserted into an optical drive; starting a roller motor to load the disc; counting the number of operating sensors; counting time of a disk loading procedure; judging whether all of the sensors operate to determine the disc is a primary disc; judging whether the number of the operating sensors decreases to determine the disc is a secondary disc; determining whether a disc loading time exceeds a default time by comparison; and ejecting the disc. If the number of operating sensors is kept the same as the original one and the time of the loading procedure does not exceed a default value, the method goes back to the judging steps to discriminate the disc repeatedly. If the disc loading time exceeds the default time, the disc is ejected.

Abstract: An optical navigation chip. The optical navigation chip is appropriate for an optical pointing device and used for calculating a displacement of the optical navigation chip relative to an operating surface. The optical navigation chip comprises a photo sensor array driven by a photo sensor control circuit for detecting an image of the operating surface, a signal readout circuit coupled with the photo sensor array for reading out the image in analog format, an analog-to-digital conversion (ADC) circuit coupled with the signal readout circuit for converting the image from analog format to digital format, an image qualification circuit coupled with the ADC circuit for determining quality of the image and outputting a quality index accordingly, and a motion detection circuit for outputting the displacement according to the quality index.

Abstract: An active pixel element of an image sensor array includes a sensor, a transfer transistor, a reset transistor, and a source follower. There is a column-read transistor positioned in each column of the image sensor array for controlling the read signals. When the sensor is reset, all column-read transistors are turned off while the transfer transistor and the reset transistor are turned on. When a reset signal is read and all column-read transistors are still turned off, the reset transistor is turned on so as to generate the same reset reference voltage when the sensor is reset. In this way, there is no difference in reset reference voltage between each column and between each row for the image sensor array.

Abstract: A test structure and a test method for determining misalignment occurring in integrated circuit manufacturing processes are provided. The test structure includes a first conductive layer having a first testing structure and a second testing structure, a dielectric layer thereon, and a second conductive layer on the dielectric layer. The second conductive layer includes a third testing structure and a fourth testing structure, which respectively overlap a portion of the first testing structure and the second testing structure in a first direction and a second direction. The first direction is opposite to the second direction. The method includes a step of measuring the electrical characteristic between the first and the second conductive layers to calculate an offset amount caused by the misalignment.

Abstract: A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the charge-accumulating diffusion region; a transfer transistor, wherein the transfer transistor has a transfer gate comprising a protruding first gate segment with a first gate dimension and a second gate segment with a second gate dimension that is smaller than the first gate dimension. A first overlapping portion between the protruding first gate segment and the charge-accumulating diffusion region is greater than a second overlapping portion between the second gate segment and the charge-accumulating diffusion region.

Abstract: This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.

Abstract: A method to detect the movement of an image sensor. Movement is detected according to a first, second, third, and fourth frame, all captured by the image sensor. A first captured image region is captured from the first frame. Then, a first corresponding region matching the first captured image region is captured from the second frame, wherein the first corresponding region shifts in a predetermined direction relative to the first captured image region. Next, a second captured image region is captured from the third frame, wherein the second captured image region shifts in a direction opposite to the predetermined direction relative to the first captured image region. Then, a second corresponding region matching the second captured image region is captured from the fourth frame. Finally, the movement of the image sensor is determined according to the second captured image region and the second corresponding region.

Abstract: A method of forming a solid-state image sensor is provided. The method includes the steps of forming a plurality of photosensor elements on a substrate; forming a plurality of color filters on the plurality of photosensors; forming a light blocking member between adjacent color filters; and forming a plurality of microlenses on the plurality of color filters. Each photosensor with each corresponding color filter and microlens is used for receiving an incident light of specific spectrum.

Abstract: A method of fabricating a MOS transistor by millisecond annealing. A semiconductor substrate with a gate stack comprising a gate electrode overlying a gate dielectric layer on a top surface of a semiconductor substrate is provided. At least one implanting process is performed to form two doped regions on opposite sides of the gate electrode. Millisecond annealing activates dopants in the doped regions. The millisecond anneal includes rapid heating and rapid cooling within 1 to 50 milliseconds.

Abstract: A method to detect the movement of an image sensor according to captured images. An image region is captured from a first image. Then, a first corresponding region matching the first region is captured from a second image. A second image region is captured from the second image. Then, a second corresponding region matching the second captured image region is captured from the first image. Finally, the movement of the image sensor is determined according to the first region and the first corresponding region when a first relative distance between the first region and the first corresponding region is the same as a second relative distance of the second captured image region and the second corresponding region, but in the opposite direction.

Abstract: A method for controlling well capacity of a photodiode includes providing a reference voltage, which is greater than a voltage of ground, to a gate of a transfer transistor while exposing the photodiode whose one end is connected to ground, so as to control the well capacity of the photodiode.

Abstract: A pinned photodiode sensor with gate-controlled SCR switch includes a pinned photodiode and a gate-controlled SCR switch. The SCR switch includes a P-type substrate, an N? doped region, and an N+ doped region formed on the substrate; a P+ doped region formed on the N? doped region; an oxide layer formed on the P substrate, the N? doped region, the N+ doped region, and the P+ doped region; and a gate formed above the P substrate and the N? doped region. The gate includes a P+ doped region and an N+ doped region. During an exposure procedure, a depletion region will not reach the interface between the oxide layer and the substrate, thereby preventing dark current leakage.

Abstract: An optical mouse includes a housing formed with a light-passing hole, alight source, alight-interfering unit and an image sensor. The light source is mounted in the housing for generating a coherent light beam that can pass through the light-passing hole toward a reference surface so as to be reflected by the reference surface. The light-interfering unit is mounted in the housing for effecting interference of the light beam reflected by the reference surface. The image sensor is mounted in the housing for sensing the interfered incident light emerged from the light-interfering unit so as to generate signals that can be used to detect changes in the position of the optical mouse when the optical mouse travels on the reference surface.

Abstract: A method to detect the movement of an image sensor. Movement is detected according to a first, second, third, and fourth frame, all captured by the image sensor. A first captured image region is captured from the first frame. Then, a first corresponding region matching the first captured image region is captured from the second frame, wherein the first corresponding region shifts in a predetermined direction relative to the first captured image region. Next, a second captured image region is captured from the third frame, wherein the second captured image region shifts in a direction opposite to the predetermined direction relative to the first captured image region. Then, a second corresponding region matching the second captured image region is captured from the fourth frame. Finally, the movement of the image sensor is determined according to the second captured image region and the second corresponding region.

Abstract: A memory device and fabricating method thereof. In the memory device of the present invention, a substrate has a plurality of deep trenches, wherein the deep trenches formed in the adjacent rows are staggered. A deep trench capacitor and a control gate are disposed in each deep trench successively. Word lines are disposed on the control gates respectively, and each word line is electrically coupled to the control gate thereunder. Diffusion regions are disposed in the substrate and surrounding the deep trenches respectively to serve as sources of vertical transistors. Each diffusion region is electrically connected to the surrounding deep trench capacitor. Active areas are disposed on the rows of the control gates respectively along a second direction. The regions where each active area overlaps the control gates have at least one indentation.

Abstract: A test structure and a test method for determining misalignment occurring in integrated circuit manufacturing processes are provided. The test structure includes a first conductive layer having a first testing structure and a second testing structure, a dielectric layer thereon, and a second conductive layer on the dielectric layer. The second conductive layer includes a third testing structure and a fourth testing structure, which respectively overlap a portion of the first testing structure and the second testing structure in a first direction and a second direction. The first direction is opposite to the second direction. The method includes a step of measuring the electrical characteristic between the first and the second conductive layers to calculate an offset amount caused by the misalignment.

Abstract: A method to detect the movement of an image sensor. Movement is detected according to a first, second, third, and fourth frame, all captured by the image sensor. A first captured image region is captured from the first frame. Then, a first corresponding region matching the first captured image region is captured from the second frame, wherein the first corresponding region shifts in a predetermined direction relative to the first captured image region. Next, a second captured image region is captured from the third frame, wherein the second captured image region shifts in a direction opposite to the predetermined direction relative to the first captured image region. Then, a second corresponding region matching the second captured image region is captured from the fourth frame. Finally, the movement of the image sensor is determined according to the second captured image region and the second corresponding region.