Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

Abstract: A radial-winding stator of a motor including a core and eight poles is disclosed. Each pole has a magnetic pole and a pole piece. The magnetic pole is connected to the core and extends outwards from the core in a radial direction. The pole piece is formed at one end of the magnetic pole distant to the core. The pole piece includes a magnetic end face having an arc length along a circumferential direction of the core, as well as an axial height along an axial direction perpendicular to the radial direction. A ratio of the arc length to the axial height is between 2.05 and 10. In another embodiment, the radial-winding stator includes ten or twelve poles.

Abstract: A semiconductor structure is provided, which includes a semiconductor substrate, a first well region, a second well region, an active region, a shallow trench isolation (STI) and at least one deep trench isolation (DTI). The first well region of a first conductive type is on the semiconductor substrate. The second well region of a second conductive type is on the semiconductor substrate and adjacent to the first well region. The second conductive type is different from the first conductive type. The active region is on the first well region. The active region has a conductive type the same as the second conductive type of the second well region. The STI is between the first and second well regions. The DTI is below the STI. The DTI is disposed between at least a portion of the first well region and at least a portion of the second well region.

Abstract: A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.

Abstract: A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

Abstract: A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered.

Abstract: A semiconductor device includes a carrier wafer, a device layer, a first semiconductor layer and a second semiconductor layer. The device layer is disposed on the carrier wafer. The first semiconductor layer is disposed on the device layer, and has a first side face and a second side face opposite to the first side face, in which the first side face is adjacent to the device layer. The second semiconductor layer is disposed on the first semiconductor layer, and has a third side face and a fourth side face opposite to the third side face, in which the fourth side face of the second semiconductor layer is adjacent to the second side face of the first semiconductor layer, and the second semiconductor layer is implanted and annealed.

Abstract: A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered.

Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.

Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.

Abstract: A radial-winding stator of a motor including a core and eight poles is disclosed. Each pole has a magnetic pole and a pole piece. The magnetic pole is connected to the core and extends outwards from the core in a radial direction. The pole piece is formed at one end of the magnetic pole distant to the core. The pole piece includes a magnetic end face having an arc length along a circumferential direction of the core, as well as an axial height along an axial direction perpendicular to the radial direction. A ratio of the arc length to the axial height is between 2.05 and 10. In another embodiment, the radial-winding stator includes ten or twelve poles.

Abstract: A calibration method for radio frequency scattering parameter measurement applying three calibrators and measurement structure thereof, comprising a transmission line segment calibrator, an offset series device calibrator, an offset shunt device calibrator and a tested object measuring instrument, wherein the length of the transmission lines for the offset series device calibrator and the offset shunt device calibrator is equal to the one of the transmission line for the tested object measuring instrument such that the offset series device calibrator, the offset shunt device calibrator and the tested object measuring instrument have the identical error boxes, and after having acquired the scattering parameter matrix of the error box by means of the calibration method, it is possible to connect the tested electronic device onto the tested object measuring instrument and perform operations on uncorrected measurement data thereof thereby obtaining the radio frequency scattering parameter of the tested object.

Abstract: The present invention provides a measurement structure for radio frequency (RF) scattering parameter measurement applying two calibrators and a calibration method thereof, comprising an offset series device calibrator, an offset shunt device calibrator and a tested object measuring instrument. Herein the lengths of the transmission lines for the offset series device calibrator and the offset shunt device calibrator and the one of the transmission line for the tested object measuring instrument are equivalent such that the offset series device calibrator, the offset shunt device calibrator and the tested object measuring instrument have the identical error box. After having acquired the scattering parameter matrix for the error box through the calibration method, it is possible to connect a tested electronic device onto the tested object measuring instrument and perform operations on the uncorrected measurement data thereby obtaining the RF scattering parameters of the tested object.

Abstract: A core-shell magnetic composite is disclosed, which includes: a magnetic core; a shell containing a protective layer and a porous layer, wherein the protective layer is coated on a surface of the magnetic core and the porous layer is the outmost layer of the shell; and a hydrophobic functional group grafted to the shell. In addition, the core-shell magnetic composite can be bound to a lipase to act as a transesterification catalyst. The present invention also relates to a method for producing biodiesel.

Abstract: An elevating mechanism for a projection apparatus includes a bottom cover, a resetting element having a first elastic member, a sliding mount, a screw stud sleeve, a screw stud, and a second elastic member. The sliding mount is disposed on a first side of the bottom cover and leans against the resetting element, and the sliding mount has an opening, at least one slot and a thread structure. The screw stud sleeve has a plurality of engaging teeth engaging within the slot. The screw stud has a thread structure and the thread structure of the screw stud meshes with the thread structure of the sliding mount.

Abstract: The present disclosure is directed to the method for producing the biodiesel comprising steps of providing a biomass having an oil, obtaining a crude mixture of the biomass, and then performing a transesterification in which the crude mixture is used as a reacting material thereof to produce the biodiesel.

Abstract: A calibration method for radio frequency scattering parameter measurements enabling self-calibration, which calibration method using a transmission line segment calibrator, a series device calibrator, a shunt device calibrator and a tested object measuring instrument, in which the lengths of the transmission lines in the series device calibrator and the shunt device calibrator are equal to the length of the transmission lines in the tested object measuring instrument such that the series device calibrator and the shunt device calibrator have the same error box as the tested object measuring instrument; and after acquiring the scattering parameter matrix of the error box through the calibration method, it is possible to connect a tested electronic device onto the tested object measuring instrument and perform operations on uncorrected measurement data thereof thereby obtaining the radio frequency scattering parameter of the tested object.