Patents by Inventor Chien Chih Chen

Chien Chih Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194724
    Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first
    Type: Application
    Filed: February 15, 2024
    Publication date: June 13, 2024
    Inventors: Chao-Hsing CHEN, I-Lun MA, Bo-Jiun HU, Yu-Ling LIN, Chien-Chih LIAO
  • Publication number: 20240186320
    Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.
    Type: Application
    Filed: February 14, 2024
    Publication date: June 6, 2024
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Ta-Wei Lin, Hsiao-Chin Tuan, Alexander Kalnitsky, Kong-Beng Thei, Shi-Chuang Hsiao, Yu-Hong Kuo
  • Patent number: 12002904
    Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: June 4, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Tsung-Hsun Chiang, Chien-Chih Liao, Wen-Hung Chuang, Min-Yen Tsai, Bo-Jiun Hu
  • Patent number: 11996429
    Abstract: A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.
    Type: Grant
    Filed: November 14, 2021
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Nan Tu, Yu-Lung Yeh, Hsing-Chih Lin, Chien-Chang Huang, Shih-Shiung Chen
  • Publication number: 20240168324
    Abstract: A decoration panel includes a first substrate, a first transparent conductive element, a transparent structure, a second substrate, a second transparent conductive element, and a first cholesteric liquid crystal layer. The first transparent conductive element is disposed on the first substrate. The transparent structure is disposed on the first substrate. The second substrate is disposed opposite to the first substrate. The second transparent conductive element is disposed on the second substrate. The first cholesteric liquid crystal layer is disposed between the first transparent conductive element and the second transparent conductive element. A display apparatus is adapted to render a decoration pattern, and the decoration pattern corresponds to the transparent structure. Moreover, a display apparatus including the decoration panel is also provided.
    Type: Application
    Filed: November 20, 2023
    Publication date: May 23, 2024
    Applicant: AUO Corporation
    Inventors: Chien-Chuan Chen, Wei-Jen Su, Hsin Chiang Chiang, Chun-Han Lee, Peng-Yu Chen, Ko-Ruey Jen, Yung-Chih Chen
  • Publication number: 20240170063
    Abstract: A Content Addressable Memory (CAM) array includes a first and a second cell structure sharing a cell boundary. The first cell structure includes a first storage circuit and a first comparator circuit, the first comparator circuit includes a first transistor having a gate, a drain, and a source. The second cell structure includes a second storage circuit and a second comparator circuit, the second comparator circuit includes a second transistor having a gate, a drain, and a source. The CAM array further includes a first shared source contact landing on the source of the first transistor and the source of the second transistor. The first shared source contact connects the source of the first transistor to the source of the second transistor. And the first shared source contact extends across the shared cell boundary from the first cell structure to the second cell structure.
    Type: Application
    Filed: April 17, 2023
    Publication date: May 23, 2024
    Inventors: Dian-Sheng Yu, Chien-Chih Chen, Jhon Jhy Liaw
  • Publication number: 20240157496
    Abstract: A method for facilitating analysis of causes of machining defects is provided. The method is carried out by a computer system. The method includes the step of obtaining motion data and vibration acceleration data about the tip of a cutter mounted on a machine tool. The method further includes the step of obtaining time-frequency information about the vibration acceleration data by performing a time-frequency analysis on the vibration acceleration data. The method further includes the step of obtaining vibration-displacement data by normalizing the time-frequency information. The method further includes the step of obtaining amplitude-distribution data about the tip by synchronizing the motion data and the vibration-displacement data.
    Type: Application
    Filed: December 19, 2022
    Publication date: May 16, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chun-Ting CHEN, Jheng-Jie LIN, Chien-Chih LIAO, Jen-Ji WANG
  • Publication number: 20240154065
    Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a
    Type: Application
    Filed: January 11, 2024
    Publication date: May 9, 2024
    Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Chien-Chih LIAO, Tzu-Yao TSENG, Tsun-Kai KO, Chien-Fu SHEN
  • Publication number: 20240139301
    Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.
    Type: Application
    Filed: November 19, 2021
    Publication date: May 2, 2024
    Inventors: Ming-Tain LAI, Cheng-Der Tony YU, I-Ju CHEN, Wei-Han LEE, Chueh-Hao YANG, Chun-Yen TSAO, Chang-Lin HSIEH, Chien-Chih OU, Chen-En TSAI
  • Patent number: 11969727
    Abstract: Present invention is related to a tumor microenvironment on chip or a biochip for cell therapy having a carrier, a first cell or tissue culture area and a second cell or tissue area imbedded within the carrier. The present invention provides a biochip successfully cooperating micro fluidic technology and cell culture achieving the goal for detecting or testing the function of cell therapy for cancer or tumor.
    Type: Grant
    Filed: October 22, 2021
    Date of Patent: April 30, 2024
    Assignees: China Medical University, China Medical University Hospital
    Inventors: Yi-Wen Chen, Ming-You Shie, Der-Yang Cho, Shao-Chih Chiu, Kai-Wen Kan, Chien-Chang Chen
  • Patent number: 11973164
    Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.
    Type: Grant
    Filed: January 3, 2023
    Date of Patent: April 30, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Che-Hung Lin, Chien-Chih Liao, Chi-Shiang Hsu, De-Shan Kuo, Chao-Hsing Chen
  • Patent number: 11968869
    Abstract: An electronic device includes a flexible substrate and a conductive wire. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. The metal portion includes a plurality of extending portions and a plurality of joint portions, and each of the openings is surrounded by two of the plurality of extending portions and two of the plurality of joint portions. A ratio of a sum of widths of the plurality of extending portions to a sum of widths of the plurality of joint portions is in a range from 0.8 to 1.2.
    Type: Grant
    Filed: April 28, 2022
    Date of Patent: April 23, 2024
    Assignee: InnoLux Corporation
    Inventors: Ya-Wen Lin, Chien-Chih Chen, Yen-Hsi Tu, Cheng-Wei Chang, Shu-Hui Yang
  • Patent number: 11961777
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Chien-Hsun Lee, Chung-Shi Liu, Hao-Cheng Hou, Hung-Jui Kuo, Jung-Wei Cheng, Tsung-Ding Wang, Yu-Hsiang Hu, Sih-Hao Liao
  • Publication number: 20240119200
    Abstract: A method of building a characteristic model includes: acquiring raw electrical data from a measurement system outside one or more processing units; acquiring operational state-related data from an information collector inside the one or more processing units; performing a data annealing process on the raw electrical data and the operational state-related data to obtain and purified electrical data and purified operational state-related data; and performing a machine learning (ML)-based process to build the characteristic model based on the purified electrical data and the purified operational state-related data.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 11, 2024
    Applicant: MEDIATEK INC.
    Inventors: Yu-Jen Chen, Chien-Chih Wang, Wen-Wen Hsieh, Ying-Yi Teng
  • Patent number: 11955444
    Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.
    Type: Grant
    Filed: October 13, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Manikandan Arumugam, Tsung-Yi Yang, Chien-Chih Chen, Mu-Han Cheng, Kuo-Hsien Cheng
  • Publication number: 20240113187
    Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.
    Type: Application
    Filed: January 5, 2023
    Publication date: April 4, 2024
    Inventors: Jhu-Min Song, Ying-Chou Chen, Yi-Kai Ciou, Chien-Chih Chou, Fei-Yun Chen, Yu-Chang Jong, Chi-Te Lin
  • Patent number: 11948938
    Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Huan Chen, Chien-Chih Chou, Ta-Wei Lin, Hsiao-Chin Tuan, Alexander Kalnitsky, Kong-Beng Thei, Shi-Chuang Hsiao, Yu-Hong Kuo
  • Publication number: 20240100352
    Abstract: A phototherapy device includes a base, at least one light conversion device and a light source module. The base has an installation slot. The light conversion device is detachably arranged in the installation slot. Each light conversion device includes a plurality of light conversion patterns. The light source module is arranged on a side of the base and configured to provide an excitation beam to the light conversion patterns, so that each of the light conversion patterns emits a converted beam. In this way, the light conversion device of the phototherapy device can be replaced according to the user's needs.
    Type: Application
    Filed: September 19, 2023
    Publication date: March 28, 2024
    Inventors: CHUNG-JEN OU, YU-MIN CHEN, MING-WEI TSAI, CHIEN-CHIH CHEN
  • Patent number: 11942509
    Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first
    Type: Grant
    Filed: June 15, 2021
    Date of Patent: March 26, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, I-Lun Ma, Bo-Jiun Hu, Yu-Ling Lin, Chien-Chih Liao
  • Patent number: 11941741
    Abstract: A graphics system includes an effect engine and a graphics pipeline. The graphics pipeline performs pipeline operations on graphical objects in a frame. The graphics pipeline includes at least a fragment shader stage. An application programming interface (API) provides an instruction that specifies a subset of the graphical objects in the frame for the effect engine to execute. When detecting the instruction, the graphics pipeline invokes the effect engine to perform a predefined set of graphics operations on the subset of the graphical objects in the frame. The predefined set of graphics operations has a higher computational complexity than the pipeline operations.
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: March 26, 2024
    Assignee: MediaTek Inc.
    Inventors: Chien-Chih Wang, Ying-Chieh Chen