Abstract: In an embodiment, a system includes: a cassette comprising a slit opening configured to house a wafer; a blade configured to move the wafer to and from the slit opening by extending into the slit opening, wherein a blade thickness of the blade is at most ? of a height of the slit opening and wherein the blade is configured to secure the wafer within a pocket on the blade that is at least ? of a wafer thickness of the wafer.

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

Abstract: A display device includes a display panel, a light shielding unit and a back plate. The display panel includes a first substrate, a second substrate and an upper polarizer. The first substrate is disposed corresponding to the second substrate. The upper polarizer is disposed on the second substrate. The light shielding unit is connected to the upper polarizer. The first substrate is disposed on the back plate.

Abstract: A system, a control method and an apparatus for chemical mechanical polishing (CMP) are introduced in the present application. The CMP apparatus may include a polishing pad, a first sensor, a polishing head and a condition. The polishing pad has a plurality of groves arranged randomly or in a specific pattern. The first sensor is configured to measure the pad profile of the polishing pad, where the pad profile includes the depth of each of the grooves on the polishing pad. The polishing head and the conditioner are operated according to at least one polishing condition, and the at least one polishing condition is tuned according to the pad profile.

Abstract: A beverage supplier includes: an inlet conduit communicated with a beverage container; a pumping and cooling device communicated with the inlet conduit, pumping and cooling a beverage from the beverage container, and outputting a cooled beverage; and an output unit, which is electrically connected to the pumping and cooling device and controls output of the cooled beverage. In a first state, the pumping and cooling device pumps and cools the beverage from the beverage container through the inlet conduit. In a second state, the pumping and cooling device empties the cooled beverage remained in the pumping and cooling device.

Abstract: An electronic device is disclosed which includes: a substrate; a plurality of active elements disposed on the substrate; a common electrode disposed on the active elements and including a plurality of openings; and a plurality of light-emitting elements, at least one of the light-emitting elements disposed on the common electrode partially, wherein the light-emitting elements each include a first pad and a second pad, and the first pad and the second pad are disposed on a same side of each said light-emitting element, wherein the first pad of one of the light-emitting elements is disposed corresponding to one of the openings of the common electrode and the first pad of the one of the light-emitting elements electrically connects to one of the active elements, and the second pad electrically connects to the common electrode.

Abstract: A near magnetic field variation detection method comprises following steps of: measuring magnetic field by a first magnetic field sensor and a second magnetic field sensor respectively; and calculating a magnetic field measurement difference, wherein the magnetic field measurement difference is (1) a magnitude of a difference of a first-magnetic-field-measurement measured by the first magnetic field sensor and a second-magnetic-field-measurement measured by the second magnetic field sensor, or (2) a magnitude of a difference of a first-magnetic-field-measurement-component measured by the first magnetic field sensor along a characteristic direction and a second-magnetic-field-measurement-component measured by the second magnetic field sensor along the characteristic direction; wherein a near magnetic field variation is occurred when (a) the magnetic field measurement difference is continuously greater than a characteristic-threshold within a characteristic-time-period, or (b) an average value of the magnetic f

Abstract: A display device is provided. The display device includes a display panel that has a polarizer, a light source assembly, a first spacer, and a second spacer. The first spacer is disposed on the first side of the display panel near the light source assembly. The first spacer is located between the display panel and the light source assembly. The second spacer is disposed on the second side of the display panel, away from the light source assembly. The thickness of the first spacer is different than that of the second spacer.

Abstract: In an embodiment, a system includes: a cassette comprising a slit opening configured to house a wafer; a blade configured to move the wafer to and from the slit opening by extending into the slit opening, wherein a blade thickness of the blade is at most ? of a height of the slit opening and wherein the blade is configured to secure the wafer within a pocket on the blade that is at least ? of a wafer thickness of the wafer.

Abstract: A 3-D printing apparatus includes a body, a disposed in the body, a control module, a print head module assembled to the body and electrically connected with the control module and a sensing module. The sensing module is assembled to the print head module to move along with the print head module in the body and electrically connected with the control module and includes a probe. The control module drives the print head module to move and causes a part of the body to hit the sensing module, thereby driving the probe to protrude from the print head module to form a first state. In the first state, the control module drives the print head module to move and causes the probe to contact the platform, thereby determining a surface state of the platform.

Abstract: An electronic device is provided and includes a first voltage trace, a second voltage trace, a first region electrode, a second region electrode, and a voltage source module. The second voltage trace is electrically insulated from the first voltage trace, the first region electrode is electrically connected to the first voltage trace, and the second region electrode is electrically connected to the second voltage trace. The voltage source module provides a first driving voltage to the first voltage trace and provides a second driving voltage to the second voltage trace, in which the first driving voltage is different from the second driving voltage.

Abstract: An electronic device includes a flexible substrate and a conductive wire. The flexible substrate includes a first bending region and a side region connected to the first bending region. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. A ratio of a total width of the metal portion disposed in the first bending region to a total width of the metal portion disposed in the side region is in a range from 0.8 to 1.2, and a length of one of the openings in the first bending region is less than or equal to a length of one of the openings in the side region.

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

Abstract: A method for scanning artificial structure, wherein a scanning artificial structure apparatus comprises four magnetic-field sensors, the four magnetic-field sensors are non-coplanar configured, the method comprises following steps of: moving the scanning artificial structure apparatus along a scanning path within a to-be-tested area, in the meantime, measuring magnetic field by the four magnetic-field sensors, and recording a position sequence when measuring magnetic field, wherein four magnetic-field measurement sequences are measured by the four magnetic-field sensors; and calculating a magnetic-field variation distribution from the four magnetic-field measurement sequences and the position sequence, wherein the magnetic-field variation distribution is corresponding to at least one artificial structure distribution.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: The present invention is related to an active substance of Hericium erinaceus having a pain-relieving effect, and a pharmaceutical composition including the active substance. The active substance is prepared using the following steps: (a) inoculating a mycelium of H. erinaceus on an agar plate and incubating at 15-32° C. for 8-16 days; (b) inoculating the incubated H. erinaceus mycelia from step (a) into a medium in a flask and incubating at 20-30° C. and pH 4.5-6.5 for 3-5 days; (c) inoculating the incubated H. erinaceus mycelia from step (b) into a medium in a fermentation tank and incubating at 24-32° C. and pH 4.5-5.5 for 8-16 days to obtain a fermented medium of the H. erinaceus mycelia; and (d) desiccating the fermented medium of the H. erinaceus mycelia from step (c) to obtain the powder of the H. erinaceus mycelia, which is further purified and isolated to obtain a novel compound of H. erinaceus.

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300° C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (Eop).

Abstract: A gateway apparatus, a detecting method of malicious domain and hacked host thereof, and a non-transitory computer readable medium are provided. The detecting method includes the following steps: capturing network traffics, and parsing traces and channels from the network traffics. Each channel is related to a link between a domain and an Internet Protocol (IP) address, and each trace is related to an http request requested from the IP address for asking the domain. Then, a trace-channel behavior graph is established. The malicious degree model is trained based on the trace-channel behavior graph and threat intelligence. Accordingly, a malicious degree of an unknown channel can be determined, thereby providing a detecting method with high precision.

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

Abstract: An electronic device is disclosed, which includes a first substrate structure, a flexible substrate and a first recess. The flexible substrate is disposed on the first substrate structure. The first recess is disposed on a first surface of the flexible substrate, and the first surface is close to the first substrate structure, wherein the first recess at least overlaps the first substrate structure.