Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a pair of source/drain regions disposed in a semiconductor substrate, where the source/drain regions are laterally spaced. A gate electrode is disposed over the semiconductor substrate between the source/drain regions. Sidewall spacers are disposed over the semiconductor substrate on opposite sides of the gate electrode. A silicide blocking structure is disposed over the sidewalls spacers, where respective sides of the source/drain regions facing the gate electrode are spaced apart from outer sides of the sidewall spacers and are substantially aligned with outer sidewalls of the silicide blocking structure.

Abstract: A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and

Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This semiconductor device arrangement includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive portion, and a second adhesive portion. The first semiconductor device and the second semiconductor device are separately arranged on the carrier. The first adhesive portion and the second adhesive portion are separately arranged on the carrier, the first adhesive portion is located between the first semiconductor device and the carrier, and the second adhesive portion is located between the second semiconductor device and the carrier. In the cross-sectional view, the first adhesive portion includes an inclined sidewall, and the inclined sidewall is adjacent to the carrier and forms an interior angle greater than 90 degrees to the carrier.

Abstract: A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

Abstract: A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The photoresist underlayer includes a polymer, including a main polymer chain having pendant target groups, and pendant organic groups or photoacid generator groups. The main polymer chain is a polystyrene, a polyhydroxystyrene, a polyacrylate, a polymethylacrylate, a polymethylmethacrylate, a polyacrylic acid, a polyvinyl ester, a polymaleic ester, a poly(methacrylonitrile), or a poly(methacrylamide). Pendant target groups are selected from the group consisting of a substituted or unsubstituted: C2-C30 diol group, C1-C30 aldehyde group, and C3-C30 ketone group. Pendant organic groups are C3-C30 aliphatic or aromatic groups having at least one photosensitive functional group, and pendant photoacid generator groups are C3-C50 substituted aliphatic or aromatic groups. A photoresist layer is formed over the photoresist underlayer.

Abstract: An electronic device having a first area and a second area adjacent to the first area is provided, which includes a flexible substrate, a first conductive layer disposed on the flexible substrate and in the first area and the second area, a semiconductor disposed on the flexible substrate and electrically connected to the first conductive layer, a second conductive layer disposed on the first conductive layer, and an organic layer disposed on the first conductive layer and in the first area and the second area. The second conductive layer has a first portion and a second portion are respectively contacted the first conductive layer in the first area. In a cross-sectional view, a first portion of the organic layer is directly contacted the first conductive layer and the second conductive layer and disposed between the first portion and the second portion of the second conductive layer.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The photoresist underlayer includes a polymer, including a main polymer chain having pendant target groups, and pendant organic groups or photoacid generator groups. The main polymer chain is a polystyrene, a polyhydroxystyrene, a polyacrylate, a polymethylacrylate, a polymethylmethacrylate, a polyacrylic acid, a polyvinyl ester, a polymaleic ester, a poly(methacrylonitrile), or a poly(methacrylamide). Pendant target groups are selected from the group consisting of a substituted or unsubstituted: C2-C30 diol group, C1-C30 aldehyde group, and C3-C30 ketone group. Pendant organic groups are C3-C30 aliphatic or aromatic groups having at least one photosensitive functional group, and pendant photoacid generator groups are C3-C50 substituted aliphatic or aromatic groups. A photoresist layer is formed over the photoresist underlayer.

Abstract: An electronic device having a peripheral area and a non-peripheral area adjacent to the peripheral area is provided. The electronic device includes a flexible substrate, a first conductive layer disposed on the flexible substrate and disposed in the peripheral area and the non-peripheral area, an organic layer disposed in the non-peripheral area and on the first conductive layer, a second conductive layer disposed on the first conductive layer, and an organic structure disposed between the first conductive layer and the second conductive layer in the peripheral area. The organic layer and the organic structure are the same material layer.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.

Abstract: An electronic device includes a conductive wire having a metal portion with openings. The openings include a first opening and a second opening arranged along a first direction, and the metal portion includes the first to fourth extending portions and the first to fourth joint portions. The first opening is surrounded by the first extending portion, the second extending portion, the first joint portion, and the second joint portion. The second opening is surrounded by the third extending portion, the fourth extending portion, the third joint portion, and the fourth joint portion. Along the first direction, a ratio of a first width sum of widths of the first extending portion, the second extending portion, the third extending portion, and the fourth extending portion to a second width sum of widths of the first joint portion and the third joint portion is in a range from 0.8 to 1.2.

Abstract: An antenna structure capable of transmitting a WiGig band for a head-mounted wireless transmission display device including a display screen and an overhead device is disclosed. The antenna structure includes at least two body portions, each of the body portions having at least a signal transceiving end, the body portions are respectively arranged at left and right sides of the display screen, and signal transceiving ends of the body portions are extended outward from the left and right sides of the display screen respectively.

Abstract: A Content Addressable Memory (CAM) array includes a first and a second cell structure sharing a cell boundary. The first cell structure includes a first storage circuit and a first comparator circuit, the first comparator circuit includes a first transistor having a gate, a drain, and a source. The second cell structure includes a second storage circuit and a second comparator circuit, the second comparator circuit includes a second transistor having a gate, a drain, and a source. The CAM array further includes a first shared source contact landing on the source of the first transistor and the source of the second transistor. The first shared source contact connects the source of the first transistor to the source of the second transistor. And the first shared source contact extends across the shared cell boundary from the first cell structure to the second cell structure.

Abstract: An electronic device includes a flexible substrate and a conductive wire. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. The metal portion includes a plurality of extending portions and a plurality of joint portions, and each of the openings is surrounded by two of the plurality of extending portions and two of the plurality of joint portions. A ratio of a sum of widths of the plurality of extending portions to a sum of widths of the plurality of joint portions is in a range from 0.8 to 1.2.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.

Abstract: A phototherapy device includes a base, at least one light conversion device and a light source module. The base has an installation slot. The light conversion device is detachably arranged in the installation slot. Each light conversion device includes a plurality of light conversion patterns. The light source module is arranged on a side of the base and configured to provide an excitation beam to the light conversion patterns, so that each of the light conversion patterns emits a converted beam. In this way, the light conversion device of the phototherapy device can be replaced according to the user's needs.

Abstract: An antenna structure capable of transmitting a WiGig band for a head-mounted wireless transmission display device including a display screen and an overhead device is disclosed. The antenna structure includes at least two body portions, each of the body portions having at least a signal transceiving end, the body portions are respectively arranged at left and right sides of the display screen, and signal transceiving ends of the body portions are extended outward from the left and right sides of the display screen respectively.

Abstract: Disclosed is an electronic device having a display region and a peripheral region adjacent to the display region. The electronic device includes a first electrode disposed in the display region, a second electrode disposed in the display region, a circuit module disposed in the peripheral region, a first electrical trace, and a second electrical trace electrically insulated from the first electrical trace. The circuit module is electrically connected to the first electrode through the first electrical trace and provides a first driving voltage to the first electrical trace. The circuit module is electrically connected to the second electrode through the second electrical trace and provides a second driving voltage to the second electrical trace, and the first driving voltage is different from the second driving voltage. In a top view, the first electrical trace at least partially overlaps the second electrical trace.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: A method for parking detection and identification of moveable apparatus, comprising following steps of: generating a magnetic field signal containing an unique identifier for identifying the moveable apparatus by a magnetic field generator disposed in the moveable apparatus; measuring magnetic field respectively by two magnetic field sensors of a magnetic field sensing apparatus disposed in a moveable-apparatus parking place or its peripheral area, wherein a first and a second magnetic field measurements are measured; and calculating a magnetic field measurement difference for obtaining the unique identifier, wherein the magnetic field measurement difference is a magnitude of a difference of the first and the second magnetic field measurements, or a magnitude of a difference of a first magnetic field component of the first magnetic field measurement along a characteristic direction and a second magnetic field component of the second magnetic field measurement along the characteristic direction.