Abstract: A semiconductor device having a well, a p well implant bounded at least in part within a substrate by the well, a conductive layer disposed on the substrate, a high voltage n? (HVN?) doped well implanted in the p well implant, a high voltage p doped (HVPD) well implanted in the p well implant, and a drain n? well and a source n? well disposed in the HVN? doped well and HVPD well, respectively, is provided. A method of fabricating the semiconductor device is also provided. In certain embodiments, the method of fabricating the semiconductor device is characterized by implanting the HVN? ions at a first tilt angle and/or implanting the HVPD ions at a second tilt angle.

Abstract: A substrate structure is provided. The substrate structure includes a substrate, a first decoration layer, and a light absorption layer. The first decoration layer is disposed on the substrate. The light absorption layer is disposed on the first decoration layer, and the first decoration layer is located between the substrate and the light absorption layer. The material of the light absorption layer includes a semiconductor metal alloy.

Abstract: A fixture for clamping a workpiece is disclosed. The fixture includes a supporting stand and an elastic contacting assembly. The supporting stand has a first accommodating space and a plural of fixing portions. The elastic contacting assembly is disposed in a corner of the supporting stand. The elastic contacting assembly includes a cylinder, a pushing block driven by the cylinder and moved toward the first accommodating space to lean against the workpiece, and an elastic component disposed between the cylinder and the pushing block. Thereby, an elastic pushing force will be provided to the workpiece for positioning the workpiece, and there will be no damages to the workpiece.

Abstract: A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. The first implant region has a first conductivity type, and the second implant region has a second conductivity type. A source diffusion region is formed in the first implant region, and a drain diffusion region is formed in the second implant region.

Abstract: The present disclosure relates to a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the BSI CSI has a semiconductor substrate with a front-side and a back-side. A plurality of photodetectors are located within the front-side of the semiconductor substrate. An implantation region is located within the semiconductor substrate at a position separated from the plurality of photodetectors. The implantation region is disposed below the plurality of photodetectors and has a non-uniform doping concentration along a lateral plane parallel to the back-side of the semiconductor substrate. The non-uniform doping concentration allows for the BSI CSI to achieve a small total thickness variation (TTV) between one or more photodetectors and a back-side of a thinned semiconductor substrate that provides for good device performance.

Abstract: A semiconductor device having a well, a p well implant bounded at least in part within a substrate by the well, a conductive layer disposed on the substrate, a high voltage n? (HVN?) doped well implanted in the p well implant, a high voltage p doped (HVPD) well implanted in the p well implant, and a drain n? well and a source n? well disposed in the HVN? doped well and HVPD well, respectively, is provided. A method of fabricating the semiconductor device is also provided. In certain embodiments, the method of fabricating the semiconductor device is characterized by implanting the HVN? ions at a first tilt angle and/or implanting the HVPD ions at a second tilt angle.

Abstract: A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. The first implant region has a first conductivity type, and the second implant region has a second conductivity type. A source diffusion region is formed in the first implant region, and a drain diffusion region is formed in the second implant region.

Abstract: An organic electroluminescent display device includes an organic light emitting structure, a back light module, and a light control structure. The organic light emitting structure includes a first electrode, a second electrode, an organic light emitting layer, and a photo current sensitive layer. The back light module is disposed correspondingly to the organic light emitting structure so as to provide a light beam to the organic light emitting structure. The photo current sensitive layer is configured to absorb the light beam for generating an electrical current, and the electrical current is configured to drive the organic light emitting layer. The light control structure is disposed between the organic light emitting structure and the back light module as so to control amount of the light beam entering the organic light emitting structure.

Abstract: The invention provides an electrospinning apparatus, which comprises one or more spinneret, a rotating collector disposed from the spinneret and configured to collect the fibers, and a sideway motion device disposed on or connected to the spinneret or the rotating collector and configured to propel or move the spinneret or the rotating collector, wherein the sideway motion device is controlled by a controlling unit for providing an angular speed (?) of the sideway motion with a formula: ?=tan?1 x/H wherein x is a parallel motion speed of the device and H is a vertical height between the spinneret and the rotating collector and wherein the angular speed (?) is in a range of about 1.0×10?4 to about 1.0 (°/sec). Also provided is the 2-D or 3-D membranes produced therefrom and a method of using the apparatus of the invention.

Abstract: The present disclosure relates to a method of forming a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the method comprises forming a plurality of photodetectors within a front-side of a semiconductor substrate. An implant is performed on the back-side of the semiconductor substrate to form an implantation region having a doping concentration that is greater in the center than at the edges of the semiconductor substrate. The back-side of the workpiece is then exposed to an etchant, having an etch rate that is inversely proportional to the doping concentration, which thins the semiconductor substrate to a thickness that allows for light to pass through the back-side of the substrate to the plurality of photodetectors. By implanting the substrate prior to etching, the etching rate is made uniform over the back-side of the substrate improving total thickness variation between the photodetectors and the back-side of the substrate.

Abstract: A device includes a semiconductor substrate having a front side and a backside. An active image sensor pixel array is disposed on the front side of the semiconductor substrate. A metal shield is disposed on the backside of, and overlying, the semiconductor substrate. The metal shield has an edge facing the active image sensor pixel array. The metal shield has a middle width, and a top width greater than the middle width.

Abstract: An organic light-emitting diode package structure includes an organic light-emitting diode device disposed on a substrate, and a filling layer covering the organic light-emitting diode device and including a fluorine-containing polyimide layer.

Abstract: An organic light emitting diode (OLED) has a plurality of light emitting regions. The OLED includes an anode layer, a cathode layer, an organic light emitting layer, and a wavelength shift layer. The organic light emitting layer is disposed between the anode layer and the cathode layer and correspondingly provides the light emitting regions with a plurality of emitted lights. Here, the organic light emitting layer has a fixed thickness. The wavelength shift layer is disposed outside the organic light emitting layer, the cathode layer, and the anode layer. A wavelength range at half-peak of combination of the emitted lights is wider than a wavelength range at half-peak of one of the lights.

Abstract: A touch panel includes a first substrate and a first composite material conductive layer. The first composite material conductive layer has a first multilayer structure. The first multilayer structure includes a first refraction index compensating layer, a second refraction index compensating layer, and a first metal conductive layer. The first refraction index compensating layer, the first metal conductive layer, and the second compensation layer are stacked on the first substrate, and an equivalent refraction index of the first composite material conductive layer is substantially between a refraction index of the first substrate and 1.1 times the refraction index of the first substrate.

Abstract: A glass-strengthening coating material is applied to a surface area without a strengthened layer or a newly-born surface area of a strengthened glass block subject to a preliminary chemically strengthened treatment. The newly-born surface area is formed as a result of machining or material removing treatments, and the glass-strengthening coating material is selected from the group consisting of inorganic polymer, organic polymer, and organic/inorganic hybrid polymer.

Abstract: The present invention discloses a camera lens module. The present invention places and fixes an image sensor chip in an opening in a substrate and then assembles a frame, a lens holder and a lens, thereby minimizing the superposition height of the camera lens module and ensuring that the assembly is simpler and more effective.

Abstract: A device includes a semiconductor substrate having a front side and a backside. An active image sensor pixel array is disposed on the front side of the semiconductor substrate. A metal shield is disposed on the backside of, and overlying, the semiconductor substrate. The metal shield has an edge facing the active image sensor pixel array. The metal shield has a middle width, and a top width greater than the middle width.

Abstract: An electrospinning equipment is provided. The electrospinning equipment includes a power supply, a collector and a material supply electrically connected to the power supply facing the collector and having a spinneret and a guide unit coupled to the spinneret and bent toward the collector, and the spinneret is configured at a central portion of the guide unit.

Abstract: The present disclosure relates to a method of forming a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the method comprises forming a plurality of photodetectors within a front-side of a semiconductor substrate. An implant is performed on the back-side of the semiconductor substrate to form an implantation region having a doping concentration that is greater in the center than at the edges of the semiconductor substrate. The back-side of the workpiece is then exposed to an etchant, having an etch rate that is inversely proportional to the doping concentration, which thins the semiconductor substrate to a thickness that allows for light to pass through the back-side of the substrate to the plurality of photodetectors. By implanting the substrate prior to etching, the etching rate is made uniform over the back- side of the substrate improving total thickness variation between the photodetectors and the back-side of the substrate.

Abstract: The present invention provides a lighting apparatus for nail beauty comprising a bottom plate having a shape non-restricted to any form and a housing having an arched main body attached to the bottom plate to form a space therebetween; characterized in that: a plurality of lighting modules are provided on a top and two lateral sides of the housing to form a ring array; the lighting modules comprise light sources and heat sinks; the lighting modules provided on the top of the housing are tilted slightly such that light emitted therefrom is shone toward the front end of the apparatus and toward the area opposite of the opening of the space between the housing and the bottom plate. Therefore, fewer light sources are required for uniform UV lighting on the nails and the reflection of UV light out to the external of the apparatus can be prevented for safer uses.