Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: A semiconductor device includes a substrate and a semiconductor die including an active surface with bond pads, an opposite inactive surface, and stepped side surfaces extending between the active surface and the inactive surface. The stepped side surfaces include a first planar surface extending from the inactive surface towards the active surface, a second planar surface extending from the active surface towards the inactive surface, and a side surface offset between the first planar surface and the second planar surface. The semiconductor device further includes an adhesive layer covering at least a portion of a surface area of the second surface and attaching the semiconductor die to the substrate.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: A semiconductor device includes a substrate and a semiconductor die including an active surface with bond pads, an opposite inactive surface, and stepped side surfaces extending between the active surface and the inactive surface. The stepped side surfaces include a first planar surface extending from the inactive surface towards the active surface, a second planar surface extending from the active surface towards the inactive surface, and a side surface offset between the first planar surface and the second planar surface. The semiconductor device further includes an adhesive layer covering at least a portion of a surface area of the second surface and attaching the semiconductor die to the substrate.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: A method for evaluating a leadframe surface includes positioning a leadframe on a measurement apparatus at a first predetermined distance relative to an end portion of a light source of an optical sensor; irradiating a predetermined area on a surface of the leadframe with light having a single predetermined wavelength from the light source; receiving, with a light receiver of the optical sensor, reflected light from the predetermined area on the surface of the leadframe, and converting the reflected light into an electric signal; determining a reflection intensity value of the predetermined area on the surface of the leadframe based on the electric signal; and calculating a reflection ratio of the predetermined area on the surface of the leadframe based on the reflection intensity value and a predetermined reference reflection intensity value associated with the light source.

Abstract: An embedded component package structure including a dielectric structure, a semiconductor chip, a first polymer layer, and a patterned conductive layer is provided. The semiconductor chip is embedded in the dielectric structure. The first polymer layer covers the semiconductor chip and has a first thickness, and the first thickness is greater than a second thickness of the dielectric structure above the first polymer layer. The patterned conductive layer covers an upper surface of the dielectric structure and extends over the first polymer layer, and the patterned conductive layer is electrically connected to the semiconductor chip.

Abstract: An embedded component package structure including a circuit substrate, an embedded component and a stress compensation layer is provided. The circuit substrate includes a core layer and an asymmetric circuit structure, and the core layer has a first thickness. The embedded component is disposed in the core layer. The stress compensation layer is disposed on one side of the core layer, and the stress compensation layer has a second thickness between 4 ?m and 351 ?m.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: An embedded component package structure including a dielectric structure and a component is provided. The component is embedded in the dielectric structure and is provided with a plurality of conductive pillars. The conductive pillars are exposed from an upper surface of the dielectric structure and have a first thickness and a second thickness, respectively, and the first thickness is not equal to the second thickness.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: An embedded component package structure including a dielectric structure and a component is provided. The component is embedded in the dielectric structure and is provided with a plurality of conductive pillars. The conductive pillars are exposed from an upper surface of the dielectric structure and have a first thickness and a second thickness, respectively, and the first thickness is not equal to the second thickness.

Abstract: An embedded component package structure including a dielectric structure, a semiconductor chip, a first polymer layer, and a patterned conductive layer is provided. The semiconductor chip is embedded in the dielectric structure. The first polymer layer covers the semiconductor chip and has a first thickness, and the first thickness is greater than a second thickness of the dielectric structure above the first polymer layer. The patterned conductive layer covers an upper surface of the dielectric structure and extends over the first polymer layer, and the patterned conductive layer is electrically connected to the semiconductor chip.

Abstract: An embedded component package structure including a circuit substrate, an embedded component and a stress compensation layer is provided. The circuit substrate includes a core layer and an asymmetric circuit structure, and the core layer has a first thickness. The embedded component is disposed in the core layer. The stress compensation layer is disposed on one side of the core layer, and the stress compensation layer has a second thickness between 4 ?m and 351 ?m.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: The fever epidemic detection system comprises a detection module, a control module and a communication module. The detection module measures and obtains a body-temperature measured value. The control module comprises a first operation unit, a determination unit and an alert unit. The first operation unit receives and calibrates the body-temperature measured value with a calibration factor, and generates a body-temperature calibrated value. The determination unit receives and determines whether the body-temperature calibrated value is within a preset normal body-temperature range and generates a determination result. The alert unit receives the determination result. The communication module transmits data to an external device. The alert unit generates a first alerting message, if the determination result shows that the body-temperature calibrated value is not within a preset normal body-temperature range.

Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: A vehicle information and environmental monitoring compound vehicle system is provided, including a sensor device used as a mobile sensor for collecting sensory data of roads, and the sensor device integrates various sensor modules and the second-generation on board computer diagnostic system serial port. The sensor device also integrates a long-distance low-power Internet of Things (LoRa) communication protocol, which can transmit data through the long-distance low-power Internet of Things gateway, and upload data to the cloud platform based on algorithm. The results of the analysis can establish a wide range of traffic congestion model through the detection information of traffic flow, and traffic density. The use of pixel-based measurement methods can quantify the urban road temperature, establish the urban heat island effect model, analyze the influence of temperature and humidity on the disease spread, establish the disease diffusion model, and display the sensor data in the graphical user interface.