Patents by Inventor Chien-hung Chen

Chien-hung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11901364
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: February 13, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Hung Chang, Zhi-Chang Lin, Shih-Cheng Chen, Chien Ning Yao, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 11899367
    Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: February 13, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Shih-Ming Chang, Wen Lo, Chun-Hung Liu, Chia-Hua Chang, Hsin-Wei Wu, Ta-Wei Ou, Chien-Chih Chen, Chien-Cheng Chen
  • Publication number: 20240047508
    Abstract: A semiconductor structure includes an inductive metal line located in a dielectric material layer that overlies a semiconductor substrate and laterally encloses a first area; and an array of first ferromagnetic plates including a first ferromagnetic material and overlying or underlying the inductive metal line. For any first point that is selected within volumes of the first ferromagnetic plates, a respective second point exists within a horizontal surface of the inductive metal line such that a line connecting the first point and the second point is vertical or has a respective first taper angle that is less than 20 degrees with respective to a vertical direction. The magnetic field passing through the first ferromagnetic plates is applied generally along a hard direction of magnetization and the hysteresis effect is minimized.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: Yu-Sheng Chen, Hsien Jung Chen, Kuen-Yi Chen, Chien Hung Liu, Yi Ching Ong, Yu-Jen Wang, Kuo-Ching Huang, Harry-Hak-Lay Chuang
  • Publication number: 20240048255
    Abstract: A method for estimating distribution of wireless signal strength, selecting measuring locations to measure wireless signal strength and compensating estimated wireless signal strength is provided, wherein the method for estimating distribution of wireless signal strength estimates the wireless signal strength at an estimation location in accordance with a plurality of single-reflection paths started from a signal emitter, the method for selecting position for measuring wireless signal strength determines whether a signal measuring process should be performed at the specific location, and the method for compensating estimated wireless signal strength compensates an estimated wireless signal strength near a specific location in accordance with a signal strength value measured at the specific location.
    Type: Application
    Filed: July 20, 2023
    Publication date: February 8, 2024
    Inventors: CHIA-SHUO YEH, CHIEN-HSIANG CHEN, JEN-HUNG YANG, SHIH-FANG AO
  • Patent number: 11883184
    Abstract: A method of predicting therapeutic effects of a treatment for cognitive impairment for an individual using the individual's predicted age difference (PAD), the method comprising scanning the individual's brain with a scanning device so as to acquire at least one medical brain image at the beginning of the treatment; processing the medical brain image to obtain at least one feature of the image; generating a PAD value of the individual based on the at least one feature of the image; comparing the PAD value with a reference value; and predicting the therapeutic effects of the treatment for cognitive impairment using the comparison result of the PAD value and the reference value.
    Type: Grant
    Filed: July 24, 2023
    Date of Patent: January 30, 2024
    Assignees: ACROVIZ USA INC., TAIPEI MEDICAL UNIVERSITY
    Inventors: Wen-Yih Tseng, Yung-Chin Hsu, Lung Chan, Chien-Tai Hong, Yueh-Hsun Lu, Jia-Hung Chen, Li-Kai Huang
  • Publication number: 20240026462
    Abstract: The present disclosure provides a method, a system and a kit for assessing the homologous recombination deficiency (HRD) status of a subject. The present disclosure further provides a method, a system and a kit for identifying a treatment based on the HRD status for the human subject.
    Type: Application
    Filed: August 13, 2021
    Publication date: January 25, 2024
    Inventors: WOEI-FUH WANG, YA-CHI YEH, YING-JA CHEN, SHU-JEN CHEN, CHIEN-HUNG CHEN, KUAN-YING CHEN, WEN-HAO TAN
  • Publication number: 20240023878
    Abstract: A method of predicting therapeutic effects of a treatment for cognitive impairment for an individual using the individual's predicted age difference (PAD), the method comprising scanning the individual's brain with a scanning device so as to acquire at least one medical brain image at the beginning of the treatment; processing the medical brain image to obtain at least one feature of the image; generating a PAD value of the individual based on the at least one feature of the image; comparing the PAD value with a reference value; and predicting the therapeutic effects of the treatment for cognitive impairment using the comparison result of the PAD value and the reference value.
    Type: Application
    Filed: July 24, 2023
    Publication date: January 25, 2024
    Inventors: Wen-Yih Tseng, Yung-Chin Hsu, Lung Chan, Chien-Tai Hong, Yueh-Hsun Lu, Jia-Hung Chen, Li-Kai Huang
  • Publication number: 20240019681
    Abstract: A lens device includes a lens module, an image forming unit and a light path turning module. The lens module includes one or plural lenses. The light path turning module is disposed between the lens module and the image forming unit. The light exiting from the lens module is reflected at least twice by the light path turning module.
    Type: Application
    Filed: June 16, 2023
    Publication date: January 18, 2024
    Inventors: Guo-Quan Lin, Hsi-Ling Chang, Chien-Hung Chen, Bo-Yan Chen, Ming-Huang Tseng, Ming-Wei Shih
  • Publication number: 20240021649
    Abstract: A package includes an optical sensor die. The optical sensor die has an optically active surface area (OASA) disposed on a front side of a substrate. A glass cover is disposed above the OASA and attached to the front side the substrate by a dam material. A through-substrate via (TSV) extends from an opening at a back side of the substrate toward a front side of the substrate. The TSV has a stepped bottom surface at the front side of the substrate. The TSV provides access for electrical connections between the back side of the substrate and the front side of the substrate.
    Type: Application
    Filed: July 11, 2023
    Publication date: January 18, 2024
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Ming-Yao CHEN, Chien-Wei CHANG, Chih-Hung TU
  • Publication number: 20240019667
    Abstract: A lens assembly includes a lens unit and a first reflective element. The lens unit includes a plurality of lenses and the back focal length of the lens unit is longer than the total length of the lens unit. The first reflective element includes a first surface, a first prism surface, and a bottom surface, and the first prism surface connects the first surface and the bottom surface, respectively. The lens unit and the first reflective element are arranged in order from an object side along a first axis. A light from the object side enters the first reflective element from the first surface and then guided to the first prism surface.
    Type: Application
    Filed: May 30, 2023
    Publication date: January 18, 2024
    Inventors: Hsi-Ling Chang, Chien-Hung Chen
  • Publication number: 20240006405
    Abstract: The invention provides a semiconductor structure, which comprises a first standard cell and a second standard cell located on a substrate, wherein an isolation region is included between the first standard cell and the second standard cell, a plurality of fin structures and a plurality of gates form a plurality of transistors, which are respectively located in the first standard cell and the second standard cell, and a plurality of single diffusion breaks (SDBs) located in the first standard cell and the second standard cell. A plurality of first dummy grooves in the first standard cell and the second standard cell, and a plurality of second dummy grooves in the isolation region, wherein some of the second dummy grooves overlap the first dummy grooves.
    Type: Application
    Filed: July 28, 2022
    Publication date: January 4, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hsien Lin, Chien-Hung Chen, Ruei-Yau Chen
  • Publication number: 20240006536
    Abstract: A semiconductor device according to the present disclosure includes a stack of first channel members, a stack of second channel members disposed directly over the stack of first channel members, a bottom source/drain feature in contact with the stack of the first channel members, a separation layer disposed over the bottom source/drain feature, a top source/drain feature in contact with the stack of second channel members and disposed over the separation layer, and a frontside contact that extends through the top source/drain feature and the separation layer to be electrically coupled to the bottom source/drain feature.
    Type: Application
    Filed: July 10, 2023
    Publication date: January 4, 2024
    Inventors: Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Chien Ning Yao, Kuo-Cheng Chiang, Chih-Hao Wang
  • Publication number: 20240006769
    Abstract: An electronic device including a metal bottom plate, a metal frame and at least one radiator is provided. The metal bottom plate includes at least one ground terminal. The metal frame includes at least one slot, at least one disconnecting part, at least one first connecting part and at least one second connecting part. The disconnecting part includes a first part and a second part. Each radiator includes a first terminal and a second terminal. The second terminal is connected to a junction between the first part and the second part. The first terminal, the second terminal, the first part, the first connecting part and the ground terminal form a first antenna path radiating at a first frequency band. The first terminal, the second terminal, the second part, the second connecting part and the ground terminal form a second antenna path radiating at a second frequency band.
    Type: Application
    Filed: May 15, 2023
    Publication date: January 4, 2024
    Applicant: PEGATRON CORPORATION
    Inventors: Chien-Yi Wu, Chih-Wei Liao, Chao-Hsu Wu, Hau Yuen Tan, Shih-Keng Huang, Cheng-Hsiung Wu, Chia-Hung Chen, Sheng-Chin Hsu, Hao-Hsiang Yang
  • Patent number: 11862622
    Abstract: An integrated circuit layout includes a first standard cell and a second standard cell. The first standard cell includes first gate lines arranged along a first direction and extending along a second direction. The second standard cell abuts to one side of the first standard cell along the second direction and includes second gate lines arranged along the first direction and extending along the second direction. A first gate line width of the first gate lines and a second gate line width of the second gate lines are different. A first cell width of the first standard cell and a second cell width of the second standard cell are integral multiples of a default gate line pitch of the first gate lines and the second gate lines. At least some of the second gate lines and at least some of the first gate lines are aligned along the second direction.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: January 2, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kun-Yuan Wu, Wei-Jen Wang, Chien-Fu Chen, Chen-Hsien Hsu, Chien-Hung Chen, Chun-Hsien Lin
  • Patent number: 11862866
    Abstract: An antenna module includes a first, a second, a third radiators, and a ground radiator. The first radiator includes a first section and a second section. The second radiator is connected to the first radiator, and includes a third section and a fourth section connected to each other. The fourth section includes a feed end. The third radiator is connected to the third section of the second radiator. The ground radiator is connected to the third radiator. The first, the second, the third, and the ground radiator are sequentially connected in a bent manner to form a stepped shape. The first section of the first radiator and the fourth section of the second radiator jointly resonate at a low frequency band, and the second section of the first radiator, the second radiator, the third radiator, and the ground radiator jointly resonate at a high frequency band.
    Type: Grant
    Filed: February 21, 2022
    Date of Patent: January 2, 2024
    Assignee: PEGATRON CORPORATION
    Inventors: Cheng-Hsiung Wu, Chien-Yi Wu, Chao-Hsu Wu, Hau Yuen Tan, Ching-Hsiang Ko, Shih-Keng Huang, Chia-Hung Chen
  • Patent number: 11859045
    Abstract: Provided are a liquid crystal polymer film (LCP film) and a laminate comprising the same. The LCP film has a first surface and a second surface opposite each other, and the first surface has an arithmetical mean height of a surface (Sa) less than 0.32 ?m. The LCP film with proper Sa is suitable to be stacked with a metal foil, such that a laminate comprising the LCP film can have an advantage of low insertion loss.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: January 2, 2024
    Assignee: CHANG CHUN PLASTICS CO., LTD.
    Inventors: An-Pang Tu, Chia-Hung Wu, Chien-Chun Chen
  • Publication number: 20230420520
    Abstract: In an embodiment, a device includes: first nanostructures; a first undoped semiconductor layer contacting a first dummy region of the first nanostructures; a first spacer on the first undoped semiconductor layer; a first source/drain region on the first spacer, the first source/drain region contacting a first channel region of the first nanostructures; and a first gate structure wrapped around the first channel region and the first dummy region of the first nanostructures.
    Type: Application
    Filed: January 5, 2023
    Publication date: December 28, 2023
    Inventors: Tsung-Han Chuang, Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Chien Ning Yao, Kai-Lin Chuang, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 11854970
    Abstract: Circuit devices, such as integrated circuit devices, are constructed with combination circuits that include two or more cascading transistors, and one or more metal layers disposed over the cascading transistors. The cascading transistors include multiple internal nodes (e.g., common source/drain regions). The multiple internal nodes are not connected to a common metal stripe (the same metal stripe) in the one or more metal layers. The absence of the connections between the internal nodes and a common metal stripe reduce or eliminate the load on the internal nodes. The transistors in the cascading transistors are independent of each other.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Yuan Chen, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Kao-Cheng Lin, Wei-Min Chan
  • Patent number: 11854929
    Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Sheng Lin, Chin-Hua Wang, Shu-Shen Yeh, Chien-Hung Chen, Po-Yao Lin, Shin-Puu Jeng
  • Patent number: 11852849
    Abstract: A camera device includes a plurality of lenses and an annular body. The annular body is disposed between the object side and the plurality of lenses, between the plurality of lenses, or between the plurality of lenses and the image side. The annular body includes an annular main body, an outer circumferential portion, and an inner circumferential portion, wherein the annular main body connects to the outer circumferential portion and the inner circumferential portion, the annular main body is disposed between the outer circumferential portion and the inner circumferential portion, and the inner circumferential portion is non-circular and surrounds the optical axis to form a hole. The camera device satisfies: Dx>Dy; where Dx is a maximum dimension of the hole through which the optical axis passes, and Dy is a minimum dimension of the hole through which the optical axis passes.
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: December 26, 2023
    Assignees: SINTAI OPTICAL (SHENZHEN) CO., LTD., ASIA OPTICAL CO., INC.
    Inventors: Ming-Wei Shih, Hsi-Ling Chang, Chien-Hung Chen