Abstract: A door locking mechanism and semiconductor container using the same include door panel, cover, and locking module. The door panel has a first stop structure. The cover and the door panel define an accommodating space for receiving the locking module. The locking module includes rotating member, holding member, and elastic member. The elastic member is disposed on the holding member and has a second stop structure near the first stop structure. The elastic member is disposed between the holding and the rotating member. The elastic member is compressed when a force is applied to the holding member, and the second stop structure detaches from a limitation state with the first stop structure for allowing a rotating operation of the rotating member. The elastic member elastically restores when the force is removed, and the second stop structure returns to the limitation state for limiting the rotating operation.

Abstract: A supporting shelf module includes a plurality of plastic supporting plates parallelly arranged in a height direction, and at least one pair of metal-made connectors located at two opposite ends of the supporting plates in the height direction. The connectors in one pair are correspondingly located in two horizontal planes perpendicular to the height direction. A wafer container is also disclosed, which includes a container body having at least two sets of the supporting shelf modules mounted therein, at least two top retaining brackets and at least two bottom retaining grooves provided on an inward side of a top and a bottom panel of the container body, respectively. The supporting shelf module has upper ends engaged with the top retaining brackets and lower ends engaged with and limited to the bottom retaining grooves in an engaging direction. Thus, the tolerance problem of the conventional wafer shelf can be solved.

Abstract: A holding device for a top-opening substrate container includes a holding assembly for pushing a substrate actuator disposed at a substrate to operate. The holding assembly includes a holding body and a pushing actuator. The pushing actuator includes a first guiding sloped surface for pressing against a second guiding sloped surface of an inner surface of a container door structure. The first guiding sloped surface causing corresponding pushing and displacement between the first guiding sloped surface and the second guiding sloped surface according to a supporting force of the container door structure. A pushing section is connected to the first guiding sloped surface, and capable of correspondingly pushing the substrate actuator to operate according to a level of the pushing and displacement of the first guiding sloped surface, such that the substrate actuator displaces substrates and stacks the substrates with another in layers.

Abstract: A substrate container with enhanced flow field therein includes a box, at least one offset inflation mechanism and at least one gas diffusion mechanism. The offset inflation mechanism is disposed outside internal receiving space of the box. The offset inflation mechanism has a gaseous chamber extending in the same direction as a bottom panel. The gas diffusion mechanism includes a base, a partition wall and at least one diffusion member. The base masks an outlet of the gaseous chamber to form an auxiliary gaseous chamber. The partition wall extends perpendicularly to the bottom panel to form a vertical first gas channel in communication with the auxiliary gaseous chamber. The diffusion member and the partition wall together define a second gas channel. The partition wall has at least one gap whereby the first gas channel and the second gas channel are in communication with each other.

Abstract: Various embodiments of the present disclosure are directed towards a two-dimensional carrier gas (2DCG) semiconductor device comprising an ohmic source/drain electrode with a plurality of protrusions separated by gaps and protruding from a bottom surface of the ohmic source/drain electrode. The ohmic source/drain electrode overlies a semiconductor film, and the protrusions extend from the bottom surface into the semiconductor film. Further, the ohmic source/drain electrode is separated from another ohmic source/drain electrode that also overlies the semiconductor film. The semiconductor film comprises a channel layer and a barrier layer that are vertically stacked and directly contact at a heterojunction. The channel layer accommodates a 2DCG that extends along the heterojunction and is ohmically coupled to the ohmic source/drain electrode and the other ohmic source/drain electrode. A gate electrode overlies the semiconductor film between the ohmic source/drain electrode and the other source/drain electrode.

Abstract: A method includes encrypting a first message that contains a first public key of a first peer, by using a second public key of a second peer; and decrypting a second message sent from the second peer by using a first private key paired with the first public key. The second message may be encrypted at the second peer by using the first public key, and may contain an encrypted data encrypted by the second peer using the second public key and hashed by using a secret key of the first peer. The first public key, the second public key, the first private key and the secret key may be physically unclonable function (PUF)-based keys.

Abstract: Various embodiments of the present disclosure are directed towards a two-dimensional carrier gas (2DCG) semiconductor device comprising an ohmic source/drain electrode with a plurality of protrusions separated by gaps and protruding from a bottom surface of the ohmic source/drain electrode. The ohmic source/drain electrode overlies a semiconductor film, and the protrusions extend from the bottom surface into the semiconductor film. Further, the ohmic source/drain electrode is separated from another ohmic source/drain electrode that also overlies the semiconductor film. The semiconductor film comprises a channel layer and a barrier layer that are vertically stacked and directly contact at a heterojunction. The channel layer accommodates a 2DCG that extends along the heterojunction and is ohmically coupled to the ohmic source/drain electrode and the other ohmic source/drain electrode. A gate electrode overlies the semiconductor film between the ohmic source/drain electrode and the other source/drain electrode.

Abstract: A method includes encrypting a first message that contains a first public key of a first peer, by using a second public key of a second peer; and decrypting a second message sent from the second peer by using a first private key paired with the first public key. The second message may be encrypted at the second peer by using the first public key, and may contain an encrypted data encrypted by the second peer using the second public key and hashed by using a secret key of the first peer. The first public key, the second public key, the first private key and the secret key may be physically unclonable function (PUF)-based keys.

Abstract: A top-opening substrate carrier comprises a container body, a door member and at least one latching mechanism. The latching mechanism includes a rotary drive member, a first driven cam, a second driven cam, a first connecting rod, a second connecting rod, two longitudinal latching arms and two lateral latching arms. The first driven cam and the second driven cam are disposed at two sides of the rotary drive member. When the rotary drive member is rotated by force, it links and activates the first connecting rod and the second connecting rod to synchronously drive the first driven cam and the second driven cam to rotate, thereby driving the two longitudinal latching arms and the two lateral latching arms to project towards locking holes of the container body and locked, or retract from the locking holes of the container body and unlocked.

Abstract: Systems and methods for determining vehicle vocation are provided. The method involves operating at least one processor to: retrieve telematics data associated with a vehicle, the telematics data originating from a telematics device installed in the vehicle; process the telematics data to extract a plurality of feature datasets, the plurality of feature datasets including: a first dataset associated with distances traveled by the vehicle; a second dataset associated with stops completed by the vehicle; and a third dataset associated with round trips performed by the vehicle; apply a plurality of trained cluster models to the plurality of feature datasets to determine a plurality of vocation probabilities; and determine the vocation of the vehicle based on the plurality of vocation probabilities.

Abstract: Disclosed herein are systems and methods for identifying and ranking traffic bottlenecks.

Abstract: A top-opening substrate carrier comprises a container body, a door member and at least one latching mechanism. The latching mechanism includes a rotary drive member, a first driven cam, a second driven cam, a first connecting rod, a second connecting rod, two longitudinal latching arms and two lateral latching arms. The first driven cam and the second driven cam are disposed at two sides of the rotary drive member. When the rotary drive member is rotated by force, it links and activates the first connecting rod and the second connecting rod to synchronously drive the first driven cam and the second driven cam to rotate, thereby driving the two longitudinal latching arms and the two lateral latching arms to project towards locking holes of the container body and locked, or retract from the locking holes of the container body and unlocked.

Abstract: A traffic analysis system analyzes location data from a plurality of vehicles to determine journeys made by the vehicles. Vehicles may make one or more rest stops during a journey. The traffic analysis system compares rest periods to journey criteria to determine whether a rest period delineates the end of a journey, or whether a rest period is still within the journey. In this way, a plurality of trips can be chained together into a journey to provide more accurate analysis of traffic patterns.

Abstract: A door locking mechanism and semiconductor container using the same include door panel, cover, and locking module. The door panel has a first stop structure. The cover and the door panel define an accommodating space for receiving the locking module. The locking module includes rotating member, holding member, and elastic member. The elastic member is disposed on the holding member and has a second stop structure near the first stop structure. The elastic member is disposed between the holding and the rotating member. The elastic member is compressed when a force is applied to the holding member, and the second stop structure detaches from a limitation state with the first stop structure for allowing a rotating operation of the rotating member. The elastic member elastically restores when the force is removed, and the second stop structure returns to the limitation state for limiting the rotating operation.

Abstract: A method of preparing a soft carbon material for high-voltage supercapacitors includes: providing an initial soft carbon material characterized by: (A) a first carbon layer spacing greater than 0.345 nm but less than 0.360 nm; (B) a crystal plane (002) with a length (Lc) less than 6 nm; (C) a crystal plane (101) with a length (La) less than 6 nm; and (D) an intensity ratio (I(002)/I(101)) of the crystal plane (002) to the crystal plane (101) obtained by XRD analysis being less than 60; performing an alkaline activation on the initial soft carbon material with an alkaline activator to obtain a first processing carbon material; and performing an electrochemical activation on the first processing carbon material with an electrolyte to obtain the soft carbon material for the high-voltage supercapacitors.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.