Abstract: A method for fabricating semiconductor device includes the steps of: forming a silicon layer on a substrate; forming a metal silicon nitride layer on the silicon layer; forming a stress layer on the metal silicon nitride layer; performing a thermal treatment process; removing the stress layer; forming a conductive layer on the metal silicon nitride layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a bit line structure on a substrate; forming a first spacer, a second spacer, and a third spacer around the bit line structure; forming an interlayer dielectric (ILD) layer on the bit line structure; planarizing part of the ILD layer; removing the ILD layer and the second spacer to form a recess between the first spacer and the third spacer; and forming a liner in the recess.

Abstract: A camera device, a video auto-tagging method and a non-transitory computer readable medium thereof are provided. The camera device comprises a processor, a camera and a sensor module. The camera is configured to capture a video. The sensor module is configured to generate distinctive sensing information after sensing a distinctive motion event of an user. The processor is configured to create a timing tag for the video according to the distinctive sensing information.

Abstract: A method of manufacturing memory devices is provided in the present invention. The method includes the steps of providing a substrate with multiple capacitors, wherein the capacitor includes a lower electrode layer, an insulating layer and an upper electrode layer and a top plate, forming a tungsten layer on the upper electrode, performing a nitriding plasma treatment to the tungsten layer to form a tungsten nitride layer, and forming a pre-metal dielectric layer on the tungsten nitride layer.

Abstract: A manufacturing method of a magnetic random access memory (MRAM) cell includes the following steps. A magnetic tunnel junction (MTJ) film stack is formed on an insulation layer. An aluminum mask layer is formed on the MTJ film stack. A hard mask layer is formed on the aluminum mask layer. An ion beam etching (IBE) process is performed with the aluminum mask layer and the hard mask layer as a mask. The MTJ film stack is patterned to be a patterned MTJ film stack by the IBE process, and at least apart of the aluminum mask layer is bombarded by the IBE process for forming an aluminum film on a sidewall of the patterned MTJ film stack. An oxidation treatment is performed, and the aluminum film is oxidized to be an aluminum oxide protection layer on the sidewall of the patterned MTJ film stack by the oxidation treatment.

Abstract: A method of manufacturing memory devices is provided in the present invention. The method includes the steps of providing a substrate with multiple capacitors, wherein the capacitor includes a lower electrode layer, an insulating layer and an upper electrode layer and a top plate, forming a tungsten layer on the upper electrode, performing a nitriding plasma treatment to the tungsten layer to form a tungsten nitride layer, and forming a pre-metal dielectric layer on the tungsten nitride layer.

Abstract: A manufacturing method of a magnetic random access memory (MRAM) cell includes the following steps. A magnetic tunnel junction (MTJ) film stack is formed on an insulation layer. An aluminum mask layer is formed on the MTJ film stack. A hard mask layer is formed on the aluminum mask layer. An ion beam etching (IBE) process is performed with the aluminum mask layer and the hard mask layer as a mask. The MTJ film stack is patterned to be a patterned MTJ film stack by the IBE process, and at least apart of the aluminum mask layer is bombarded by the IBE process for forming an aluminum film on a sidewall of the patterned MTJ film stack. An oxidation treatment is performed, and the aluminum film is oxidized to be an aluminum oxide protection layer on the sidewall of the patterned MTJ film stack by the oxidation treatment.

Abstract: The present invention provides a semiconductor structure, the semiconductor structure includes a substrate comprising a diffusion region, a transistor structure on the substrate, and a resistive random access memory (RRAM) on the substrate, wherein the resistive random access memory includes at least one metal silicide layer in direct contact with the diffusion region, and a lower electrode, a resistive switching layer and an upper electrode are sequentially disposed on the metal silicide layer.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a silicon layer on a substrate; forming a first metal silicon nitride layer on the silicon layer; performing an oxygen treatment process to form an oxide layer on the first metal silicon nitride layer; forming a second metal silicon nitride layer on the oxide layer; forming a conductive layer on the second metal silicon nitride layer; and patterning the conductive layer, the second metal silicon nitride layer, the oxide layer, the first metal silicon nitride layer, and the silicon layer to form a gate structure.

Abstract: The present invention provides a semiconductor structure, the semiconductor structure includes a fin transistor (fin filed effect transistor, finFET) located on a substrate, the fin transistor includes a gate structure crossing over a fin structure, and at least one source/drain region. And a resistive random access memory (RRAM) includes a lower electrode, a resistance switching layer and a top electrode being sequentially located on the source/drain region and electrically connected to the fin transistor.

Abstract: The present invention provides a semiconductor structure, the semiconductor structure includes a fin transistor (fin filed effect transistor, finFET) located on a substrate, the fin transistor includes a gate structure crossing over a fin structure, and at least one source/drain region. And a resistive random access memory (RRAM) includes a lower electrode, a resistance switching layer and a top electrode being sequentially located on the source/drain region and electrically connected to the fin transistor.

Abstract: The present invention provides a semiconductor structure, the semiconductor structure includes a substrate comprising a diffusion region, a transistor structure on the substrate, and a resistive random access memory (RRAM) on the substrate, wherein the resistive random access memory includes at least one metal silicide layer in direct contact with the diffusion region, and a lower electrode, a resistive switching layer and an upper electrode are sequentially disposed on the metal silicide layer.

Abstract: A method includes encrypting a first message that contains a first public key of a first peer, by using a second public key of a second peer, and decrypting a second message sent from the second peer by using a first private key paired with the first public key. The second message is encrypted at the second peer by using the first public key, and contains an encrypted data encrypted by using the second public key and hashed by using a secret key of the first peer.

Abstract: A detecting method for repetitive motion includes receiving a plurality of accelerated velocities, receiving a plurality of angular velocities, determining a plurality of stationary points according to the accelerated velocities, determining a plurality of motion periods according to the stationary points, wherein the motion periods separately correspond to different sets of the angular velocities, and clustering the motion periods according to differences among the different sets of angular velocities corresponding to the motion periods.

Abstract: A method for performing an assessment of mental and behavioral condition of a subject includes displaying, by a virtual reality (VR) device, a VR scene; generating, by the VR device, a notification indicating an assignment for the subject in the VR scene; recording, by a recording device, a response of the subject to the assignment; calculating, by a processing device, at least one score based on the response; and comparing, by the processing device, the score with a pre-established normative scale to generate an assessment result for the mental and behavioral condition of the subject.

Abstract: Display devices with improved routing between connectors and source drivers disposed on a substrate such as glass. Various features improve different characteristics of the routings between the connectors and source drivers. For example, a t-shaped connector is provided to ensure voltage provided to the source drivers is approximately equal. Routings may be tapered (i.e., altered in width) to reduce the amount of area consumption in locations where doing so is desirable but to decrease resistance in areas having more space. Routings may also include stacked power supply and ground traces to provide benefits such as improved decoupling capacitance. Other features are provided.

Abstract: A photosensitive resin composition and a manufacturing method thereof, a black matrix, a pixel layer, a protective film, a color filter, and a liquid crystal display apparatus are provided. The photosensitive resin composition includes an alkali-soluble resin (A), a compound (B) containing an ethylenically-unsaturated group, a photoinitiator (C), and a solvent (D), wherein the alkali-soluble resin (A) contains a first alkali-soluble resin (A-1) having all of a fluorene group, a polymerizable unsaturated group, and a carbamate group. The photosensitive resin composition contains a specific alkali-soluble resin (A-1), so that a pattern formed by the photosensitive resin composition has no development residue and good sputtering resistance.

Abstract: The disclosure is directed to a method of providing location information for a mobile electronic device and a mobile electronic device using the same method. In one of the exemplary embodiments, the mobile electronic device would receive a first signal that indicates capturing a multimedia file. In response to receiving the first signal, the mobile electronic device would transmit to an external device a second signal in response to receiving the first signal. In response to transmitting the second signal, the mobile electronic device may receive from the external device a first location information or an ephemeris. The mobile electronic device may then determine the first location information either based on the first location information as received or based on the ephemeris. Also, the mobile electronic device may associate the multimedia file with the first location information.

Abstract: A detecting method for a conductive matter on a capacitive sensor device includes obtaining a positive signal, computing a signal summation of a plurality of sensing points in at least an electrode line where the positive signal is occurred, comparing the signal summation to a predetermined value, determining a touch object inducing the positive signal is not an irregular conductive matter if the signal summation is larger than the predetermined value, and determining the touch object inducing the positive signal is the irregular conductive matter if the signal summation is not larger than the predetermined value.

Abstract: A resistive random access memory (RRAM) cell includes a substrate, a transistor having a gate on the substrate and a source/drain region in the substrate, a first inter-layer dielectric layer covering the transistor, a contact plug disposed in the first inter-layer dielectric layer and landing on the source/drain region, a resistive material layer conformally covering a protruding upper end portion of the contact plug, and a top electrode on the resistive material layer.