Abstract: A level of detail-transformation adaptive enhancement method for image contrast includes: dividing a remote sensing image into a plurality images of different levels of detail, the lowest level of detail defined as L and the highest level of detail defined as H, and gradually transforming an image Imagei of an arbitrary level of detail i between the image ImageH of the highest level of detail H and the image ImageL of the lowest level of detail L from ImageL to ImageH through the following equation: Imagei=Ri×ImageH+(1?Ri)×ImageL. The image ImageH of the highest level of detail H is an image ImageACE produced with adaptive contrast enhancement processing, or an image produced with a contrast enhancement method such as Gaussian or histogram equalization; the image ImageL of the lowest level of detail L is an image ImageLCE produced by common linear contrast enhancement.

Abstract: A portable electronic device including a first body, a second body, a hinge mechanism, a control unit, a sensor unit, a sterilization module, and a shielding module, is provided. The first body has a first inner surface. The second body has a second inner surface. The hinge mechanism is connected between the first body and the second body. The control unit is disposed in the first body or the second body. The sensor unit is disposed in the first body or the second body and coupled to the control unit. The sterilization module is disposed at the hinge mechanism and coupled to the control unit, the sterilization module is configured to generate light for sterilization and disinfection. The shielding module is disposed on the hinge mechanism and the shielding module can move relative to the hinge mechanism.

Abstract: An electric nail gun with a buffer mechanism is provided and includes a frame, a weight assembly provided on a side of the frame and having a weight frame, an impact assembly provided in the frame and having an impact frame, a transmission assembly for interlocking the weight assembly and the impact assembly, and a buffer component, where the transmission assembly has a first rack interlocked with the impact frame, a second rack interlocked with the weight assembly, and a gear unit meshed with the first rack and the second rack. The buffer component is provided between the first rack and the impact frame, so that buffering is achieved by reducing a counter force generated when the impact frame collides with the frame to prevent the first rack, the second rack, and the gear unit from being damaged due to the counter force.

Abstract: Systems, methods, architectures, and computer program products for linking multiple devices are disclosed. In an example for linking a mobile device with a desktop device, an identifier of a mobile device can be received from a desktop computer. The identifier can be used to send a link to the mobile device. When the link is accessed, a code and a channel are generated. The mobile device is connected to the channel and the code is provided to the mobile device. The code is entered at the desktop device and the desktop device is connected to the channel responsive to the code being validated, thereby linking the desktop and mobile devices.

Abstract: A distance measuring device includes a pulsed laser source, a light receiving unit and a computing module. The pulsed laser source emits a laser pulse to a target in accordance with a predetermined period. The light receiving unit has a photon receiving type of light receiving element that receives incident light and outputs a binary pulse, and the binary pulse is used to indicate whether a photon receiving event occurs. The computing module is configured to receive the binary pulse and determine whether an inter-period coincidence event occurs, and the inter-period coincidence event is defined by detecting a plurality of photon receiving events exceeding a predetermined count, on relative positions in a predetermined period number of the predetermined periods. If the calculation module determines that the inter-period coincidence event occurs, a distance of the target is calculated according to time information related to the inter-period coincidence event.

Abstract: A method includes encrypting a first message that contains a first public key of a first peer, by using a second public key of a second peer; and decrypting a second message sent from the second peer by using a first private key paired with the first public key. The second message includes a write command and is encrypted at the second peer by using the first public key, and contains an encrypted data encrypted by the second peer using the second public key and hashed by using a secret key of the first peer. The first public key, the second public key, the first private key and the secret key are physically unclonable function (PUF)-based keys.

Abstract: A communication apparatus, an electronic apparatus and an antenna adjustment method thereof are provided. The communication apparatus includes an antenna system, a tuning portion and a switch circuit. The antenna system includes at least two antenna units. The tuning portion is disposed between the at least two antenna units and includes at least two branch units. The switch circuit is coupled to the tuning portion. The switch circuit switches a conduction from a first one of the branch units to a second one of the branch units according to a switching signal. The switching signal is related to performances of the antenna system. Accordingly, a dynamic and flexible adjustment mechanism can be provided to increase throughput and improve users' internet experience.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Abstract: A method includes encrypting a first message that contains a first public key of a first peer, by using a second public key of a second peer, and decrypting a second message sent from the second peer by using a first private key paired with the first public key. The second message is encrypted at the second peer by using the first public key, and contains an encrypted data encrypted by using the second public key and hashed by using a secret key of the first peer.

Abstract: Systems, methods, architectures, and computer program products for linking multiple devices are disclosed. In an example for linking a mobile device with a desktop device, an identifier of a mobile device can be received from a desktop computer. The identifier can be used to send a link to the mobile device. When the link is accessed, a code and a channel are generated. The mobile device is connected to the channel and the code is provided to the mobile device. The code is entered at the desktop device and the desktop device is connected to the channel responsive to the code being validated, thereby linking the desktop and mobile devices.

Abstract: A learning method to be implemented by an electronic device including a processor and a display unit and cooperating with an imaging frame includes: storing a set of image data related to a virtual 3D image of an object, and a total score associated with the object; displaying, by the display unit, image parts respectively on display areas that surround a central area according to the set of image data, in a manner that the virtual 3D image of the object is reconstructed in the imaging frame when the imaging frame is placed on the display unit and corresponds to the central area in position; determining, by the processor, whether a time duration for which the display unit displays the image parts is not smaller than a predetermined time duration; and when affirmative, adding, by the processor, a learning score to the total score.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a bit line structure on a substrate; forming a first spacer, a second spacer, and a third spacer around the bit line structure; forming an interlayer dielectric (ILD) layer on the bit line structure; planarizing part of the ILD layer; removing the ILD layer and the second spacer to form a recess between the first spacer and the third spacer; and forming a liner in the recess.

Abstract: A level of detail-transformation adaptive enhancement method for image contrast includes: dividing a remote sensing image into a plurality images of different levels of detail, the lowest level of detail defined as L and the highest level of detail defined as H, and gradually transforming an image Imagei of an arbitrary level of detail i between the image ImageH of the highest level of detail H and the image ImageL of the lowest level of detail L from ImageL to ImageH through the following equation: Imagei=Ri×ImageH+(1?Ri)×ImageL. The image ImageH of the highest level of detail H is an image ImageACE produced with adaptive contrast enhancement processing, or an image produced with a contrast enhancement method such as Gaussian or histogram equalization; the image ImageL of the lowest level of detail L is an image ImageLCE produced by common linear contrast enhancement.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

Abstract: A nail gun having a protection structure includes a body, a protection cover and a resilient release. The body includes a nail magazine loaded with nails and includes a barrel connected to the nail magazine. One end of the barrel has a nozzle, and the nail magazine forms a notch close to the nozzle and includes a fastening recess. The protection cover is slidably disposed on the nail magazine. The protection cover includes an engagement board, a sliding board connected to the same, and an engagement hole formed on the engagement board. The resilient release is resiliently assembled in the fastening recess and contacts and presses against an inner edge of the engagement hole, so that the protection cover is positioned by the resilient release, and the sliding board covers the notch.

Abstract: A semiconductor device includes a substrate, a channel layer, a barrier layer, a ferroelectric composite material layer, a gate, a source and a drain. The channel layer and the barrier layer having a recess are disposed on the substrate in sequence. The ferroelectric composite material layer including a first dielectric layer, a charge trapping layer, a first ferroelectric material layer, a second dielectric layer and a second ferroelectric material layer is disposed in the recess. The gate is disposed on the ferroelectric composite material layer. The source and the drain are disposed on the barrier layer.

Abstract: A detecting method for repetitive motion includes receiving a plurality of accelerated velocities, receiving a plurality of angular velocities, determining a plurality of stationary points according to the accelerated velocities, determining a plurality of motion periods according to the stationary points, wherein the motion periods separately correspond to different sets of the angular velocities, and clustering the motion periods according to differences among the different sets of angular velocities corresponding to the motion periods.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.