Abstract: A magnetic tunnel junction (MTJ) structure of a magnetic random access memory (MRAM) cell includes an insulation layer, a patterned MTJ film stack, an aluminum oxide protection layer, an interlayer dielectric, and a connection structure. The patterned MTJ film stack is disposed on the insulation layer. The aluminum oxide protection layer is disposed on a sidewall of the patterned MTJ film stack, and the aluminum oxide protection layer includes an aluminum film oxidized by an oxidation treatment. The interlayer dielectric covers the aluminum oxide protection layer and the patterned MTJ film stack. The connection structure penetrates the interlayer dielectric above the patterned MTJ film stack, and the connection structure is electrically connected to a topmost portion of the patterned MTJ film stack.

Abstract: A P-shaped pet leash comprises a strap having a first end and a second end, a snap hook connected to the first end, a retention ring connected to the second end, a handhold adjustment ring and a collar adjustment ring movably kept on the strap adjacent to the snap hook and the retention ring respectively. The snap hook is connected to the handhold adjustment ring, a resizable handhold is formed at the strap near the first end for a user to hold, sling across the user's shoulder, tie to the user's waist, or to tie the handhold to a ground object. The retention ring is connected to the collar adjustment ring, a pre-adjusted sized collar is formed at the strap near the second end to prevent the collar from tightening during the pet storm.

Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.

Abstract: The disclosure provides a fixing assembly adapted to fix an expansion card on an expansion slot of a motherboard. The fixing assembly includes a casing, a first positioning component and a second positioning component. The first positioning component is slidably disposed on the casing so that a distance between the first positioning component and the expansion slot of the motherboard is adjustable. The second positioning component is slidably disposed on the first positioning component. The second positioning component and the first positioning component are configured to press against the expansion card, and sliding directions of the first positioning component and the second positioning component are different from each other.

Abstract: A photosensitive resin composition and a manufacturing method thereof, a black matrix, a pixel layer, a protective film, a color filter, and a liquid crystal display apparatus are provided. The photosensitive resin composition includes an alkali-soluble resin (A), a compound (B) containing an ethylenically-unsaturated group, a photoinitiator (C), and a solvent (D), wherein the alkali-soluble resin (A) contains a first alkali-soluble resin (A-1) having all of a fluorene group, a polymerizable unsaturated group, and a carbamate group. The photosensitive resin composition contains a specific alkali-soluble resin (A-1), so that a pattern formed by the photosensitive resin composition has no development residue and good sputtering resistance.

Abstract: The present invention provides a bit line gate structure comprising a substrate, an amorphous silicon layer disposed on the substrate, a first doped region located in the amorphous silicon layer, a titanium silicon nitride (TiSiN) layer, located in the amorphous silicon layer, and a second doped region located in the TiSiN layer, the first doped region contacts the second doped region directly.

Abstract: A multifunctional pet house includes a house body having an electromechanical room and a pet room, the electromechanical room has a water collecting tank, an electric pump and a bottom rotating jet rod, above the pet room is provided a top rotating jet rod, after raising the pressure and speed of water in the water collection tank through the electric pump, nozzles of the top and bottom rotating jet rods spray water on the pet room, so as to remove the dirt attached to the surface of the pet room. Then, the sewage finally flows into the water collecting tank for recycling, after a certain period of continuous cleaning, the sewage in the water collecting tank is discharged from the pet room, then repeat the same cleaning process twice to thoroughly clean the pet room. Moreover, with the ventilator and warm-keeping device, it can provide good living environment for pets.

Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.

Abstract: A semiconductor device includes a substrate, a dielectric layer, a first tungsten layer, an interface layer and a second tungsten layer. The dielectric layer is disposed on the substrate and has a first opening and a second opening larger than the first opening. The first tungsten layer is filled in the first opening and is disposed in the second opening. The second tungsten layer is disposed on the first tungsten layer in the second opening, wherein the second tungsten layer has a grain size gradually increased from a bottom surface to a top surface. The interface layer is disposed between the first tungsten layer and the second tungsten layer, wherein the interface layer comprises a nitrogen containing layer. The present invention further includes a method of forming a semiconductor device.

Abstract: A detection and updating method of touch system includes: proceeding an ideal base signal measurement to obtain a plurality of ideal base signals under an ideal state; proceeding a raw base signal measurement to obtain a plurality of raw base signals under a raw state; forming a linear relationship related by the ideal base signals and the raw base signals to obtain two coefficients; calculating a plurality of new base signals according to the two coefficients and the ideal base signals; and, proceeding a base signal updating method by the new base signals.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Abstract: The present invention provides a bit line gate structure comprising a substrate, an amorphous silicon layer disposed on the substrate, a first doped region located in the amorphous silicon layer, a titanium silicon nitride (TiSiN) layer, located in the amorphous silicon layer, and a second doped region located in the TiSiN layer, the first doped region contacts the second doped region directly.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Abstract: A detection method for an irregular conductive matter in a touch event includes scanning a plurality of detection points to obtain a plurality of sensing signals of the detection points; computing a first signal summation of all positive signals among the sensing signals; obtaining a first change between the first signal summation and a previous first signal summation; computing a second signal summation of all negative signals among the sensing signals; obtaining a second change between the second signal summation and a previous second signal summation; setting a flag according to the first change and the second change when the first change and the second change are positive; clearing the flag according to the first change and the second change when the first change and the second change are negative; and disabling a reporting of at least one touch point when the flag exists.

Abstract: The disclosure provides a fixing assembly adapted to fix an expansion card on an expansion slot of a motherboard. The fixing assembly includes a casing, a first positioning component and a second positioning component. The first positioning component is slidably disposed on the casing so that a distance between the first positioning component and the expansion slot of the motherboard is adjustable. The second positioning component is slidably disposed on the first positioning component. The second positioning component and the first positioning component are configured to press against the expansion card, and sliding directions of the first positioning component and the second positioning component are different from each other.

Abstract: A communication apparatus, an electronic apparatus and an antenna adjustment method thereof are provided. The communication apparatus includes an antenna system, a tuning portion and a switch circuit. The antenna system includes at least two antenna units. The tuning portion is disposed between the at least two antenna units and includes at least two branch units. The switch circuit is coupled to the tuning portion. The switch circuit switches a conduction from a first one of the branch units to a second one of the branch units according to a switching signal. The switching signal is related to performances of the antenna system. Accordingly, a dynamic and flexible adjustment mechanism can be provided to increase throughput and improve users' internet experience.

Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.

Abstract: A magnetic tunnel junction (MTJ) structure of a magnetic random access memory (MRAM) cell includes an insulation layer, a patterned MTJ film stack, an aluminum oxide protection layer, an interlayer dielectric, and a connection structure. The patterned MTJ film stack is disposed on the insulation layer. The aluminum oxide protection layer is disposed on a sidewall of the patterned MTJ film stack, and the aluminum oxide protection layer includes an aluminum film oxidized by an oxidation treatment. The interlayer dielectric covers the aluminum oxide protection layer and the patterned MTJ film stack. The connection structure penetrates the interlayer dielectric above the patterned MTJ film stack, and the connection structure is electrically connected to a topmost portion of the patterned MTJ film stack.

Abstract: A semiconductor device includes a substrate, a dielectric layer, a first tungsten layer, an interface layer and a second tungsten layer. The dielectric layer is disposed on the substrate and has a first opening and a second opening larger than the first opening. The first tungsten layer is filled in the first opening and is disposed in the second opening. The second tungsten layer is disposed on the first tungsten layer in the second opening, wherein the second tungsten layer has a grain size gradually increased from a bottom surface to a top surface. The interface layer is disposed between the first tungsten layer and the second tungsten layer, wherein the interface layer comprises a nitrogen containing layer. The present invention further includes a method of forming a semiconductor device.

Abstract: An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.