Abstract: A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.

Abstract: An unmanned aerial vehicle image processing system includes a digital camera mounted on an unmanned aerial vehicle, an autopilot controller installed in the unmanned aerial vehicle and pre-loaded with a base image, and a computer device. The autopilot controller programs a flight path as a series of mission lags to cover a target polygon on the base image in a lawnmower pattern for controlling the unmanned aerial vehicle to perform a flight mission in which the autopilot controller records plural GPS/INS data and triggers the digital camera to take plural photos which are further calibrated to generate plural calibrated photos corresponding to the plural GPS/INS data, respectively. The computer device processes the plural calibrated photos to generate plural projected photos by using the corresponding plural GPS/INS data, respectively, and stitches the plural projected photos to a mosaic image by a photo-stitching process.

Abstract: A manufacturing method of a metal gate structure includes providing a substrate having at least a first metal oxide layer formed thereon, and transferring the surface of the first metal oxide layer into a second metal oxide layer. The first metal oxide layer includes a metal oxide (M1Ox) of a first metal (M1) and the second metal oxide layer includes a metal oxide ((M1M2Oy) of the first metal and a second metal (M2).

Abstract: A method for fabricating high-k dielectric layer is disclosed. The method includes the steps of: providing a substrate; and forming a plurality of high-k dielectric layers by using a plurality of reacting gases to perform a plurality of process stages on the surface of the substrate, wherein at least one of the reacting gases comprises different flow rate in the fabrication stages.

Abstract: A computer booting method is provided for a computer system. The method comprises performing a power-on-self test. When the test result shows no error on the BIOS, a booting procedure is executed. When the test result shows the BIOS is damaged, whether the computer system stores a backup file of the BIOS is determined. When the computer system stores the backup file, the central processing unit reads the data of backup file and write it into a BIOS system memory and a reboot process is performed. When there is no backup file in the computer system, the computer system is connected to an internet server and downloads a BIOS backup file to the system main memory from the internet server. The central processing unit reads the BIOS backup file and write it into the BIOS system memory and a reboot process is formed.

Abstract: The present invention provides a method of forming an opening on a semiconductor substrate. First, a substrate is provided. Then a dielectric layer and a cap layer are formed on the substrate. A ratio of a thickness of the dielectric layer and a thickness of the cap layer is substantially between 15 and 1.5. Next, a patterned boron nitride layer is formed on the cap layer. Lastly, an etching process is performed by using the patterned hard mask as a mask to etch the cap layer and the dielectric layer so as to form an opening in the cap layer and the dielectric layer.

Abstract: A manufacturing method of a metal gate structure includes providing a substrate having at least a first metal oxide layer formed thereon, and transferring the surface of the first metal oxide layer into a second metal oxide layer. The first metal oxide layer includes a metal oxide (M1Ox) of a first metal (M1) and the second metal oxide layer includes a metal oxide ((M1M2Oy) of the first metal and a second metal (M2).

Abstract: A fin field-effect transistor structure includes a substrate, a fin channel and a high-k metal gate. The high-k metal gate is formed on the substrate and the fin channel. A process of manufacturing the fin field-effect transistor structure includes the following steps. Firstly, a polysilicon pseudo gate structure is formed on the substrate and a surface of the fin channel. By using the polysilicon pseudo gate structure as a mask, a source/drain region is formed in the fin channel. After the polysilicon pseudo gate structure is removed, a high-k dielectric layer and a metal gate layer are successively formed. Afterwards, a planarization process is performed on the substrate having the metal gate layer until the first dielectric layer is exposed, so that a high-k metal gate is produced.

Abstract: A method for fast resuming a computer system from a shutdown state is provided. The computer system comprises a basic input output system (BIOS), a system memory and a storage device storing a system memory data of the system memory and a used system memory block address table before the computer system enters the shutdown state. The method comprises receiving a starting signal for power supplying the computer system and starting the storage device. A fast boot built-in program of the BIOS is started and, according to the used system memory block address table, the fast boot built-in program sequentially reads the stored system memory data from the storage device and writes the read system memory data into the system memory with a use of an optimized read-and-write block size as a read-and-write unit. The computer system enters a suspended state and is resumed from the suspended state.

Abstract: In a method for adjusting video or audio quality of a video stream, a video stream request for requesting an original target video stream from a client is received. Then, information about a connection bandwidth of the client is obtained, and a step is performed for determining if the connection bandwidth of the client is sufficient for receiving the target video stream. When it is determined that the connection bandwidth of the client is insufficient, at least one video or audio parameter is selected according to the information about the connection bandwidth of the client to adjust and reduce the video or audio quality of the target video stream, and the quality-reduced target video stream is transmitted to the client. Information about connection bandwidth of the client is continually obtained for transmitting all of the target video stream to the client.

Abstract: A method for fabricating a fin-FET, wherein the method comprises several steps as follows: A substrate is first provided, and a silicon fin is then formed in the substrate. Next a dielectric layer is formed on the silicon fin and the substrate. A poly silicon layer is subsequently formed on the dielectric layer, and the poly silicon layer is then planarized. Subsequently, a poly silicon gate is formed and a portion of the silicon fin is exposed by patterning the planarized poly silicon layer. A source and a drain are separately formed on two opposite sides of the exposed silicon fin adjacent to the poly silicon gate.

Abstract: In one aspect of the invention there is disclosed a multicolor thermal imaging system wherein different heating elements on a thermal print head can print on different color-forming layers of a multicolor thermal imaging member in a single pass. The line-printing time is divided into portions, each of which is divided into a plurality of subintervals. All of the pulses within the portions have the same energy. In one embodiment, every pulse has the same amplitude and duration. Different colors are selected for printing during the different portions by varying the fraction of subintervals that contain pulses. This technique allows multiple colors to be printed using a thermal print head with a single strobe signal line. Pulsing patterns may be chosen to reduce the coincidence of pulses provided to multiple print head elements, thereby reducing the peak power requirements of the print head.

Abstract: A multicolor direct thermal imaging method wherein a multicolor image is formed in a thermal imaging member comprising at least first and second different image-forming compositions and a thermal printer for use in practicing the method. Heat is applied to at least the second image-forming composition while the first image-forming composition is at a first baseline temperature (T1) to form an image in at least the second image-forming composition, and heat is applied to at least the first image-forming composition while it is at a second baseline temperature (T2) to form an image in at least the first image-forming composition, wherein T1 is different from T2.

Abstract: A computer system and a computer information display method thereof are provided. In the method, a computer information management unit stores computer information of an application program in a storage unit. During a system login process of the computer system, a processing unit reads the computer information form the storage unit, and displays the computer information and a login dialog on a screen unit.

Abstract: The invention discloses a hard disk carrying apparatus comprising a main body, a plurality of slide racks, and a plurality of valves. In the main body, an accommodating space is concavely disposed at a front side of the main body; a plurality of primary slide rails that are adjacent and parallel to each other are disposed on a bottom wall in the accommodating space; a plurality of secondary slide rails is disposed on a top wall in the accommodating space. Each of the plurality of slide racks is a long rack. Each of the plurality of valves is a long door plate member. An end of each valve is a pivot end that is pivotally installed at a bottom edge of the front side of the main body; the other end of the valve is a latch end that includes a locking element disposed thereon.

Abstract: A method for manufacturing a multi-gate transistor device includes providing a semiconductor substrate having a first patterned semiconductor layer formed thereon, sequentially forming a gate dielectric layer and a gate layer covering a portion of the first patterned semiconductor layer on the semiconductor substrate, removing a portion of the first patterned semiconductor layer to form a second patterned semiconductor layer, and performing a selective epitaxial growth process to form an epitaxial layer on a surface of the second patterned semiconductor layer.

Abstract: A hard drive carrying device and its hard drive box can fasten a plurality of hard drive boxes in a containing slot of the supporting stand by utilizing simplified mechanism so that a user can rapidly open the locking of the hard drive box by pressing a pressing member to quickly take the hard drive box out from the supporting stand. A hard drive carrying device comprises a supporting stand with a plurality of containing slots, a plurality of hard drive boxes, wherein each hard drive box comprises a main frame, an engaging member and a lock protection member, wherein the lock protection member further comprises a sliding piece, a fastening elastic piece, a pressing member and an elastic member. The device uses the structural design to exactly thin the opening mechanism for the hard drive box to effectively reduce the occupied space so as to increase the actual application.

Abstract: In one aspect of the invention there is disclosed a multicolor thermal imaging system wherein different heating elements on a thermal print head can print on different color-forming layers of a multicolor thermal imaging member in a single pass. The line-printing time is divided into portions, each of which is divided into a plurality of subintervals. All of the pulses within the portions have the same energy. In one embodiment, every pulse has the same amplitude and duration. Different colors are selected for printing during the different portions by varying the fraction of subintervals that contain pulses. This technique allows multiple colors to be printed using a thermal print head with a single strobe signal line. Pulsing patterns may be chosen to reduce the coincidence of pulses provided to multiple print head elements, thereby reducing the peak power requirements of the print head.

Abstract: In one aspect of the invention there is disclosed a multicolor thermal imaging system wherein different heating elements on a thermal print head can print on different color-forming layers of a multicolor thermal imaging member in a single pass. The line-printing time is divided into segments, each of which is divided into a plurality of subintervals. All of the pulses within the segments have the same energy. In one embodiment, every pulse has the same amplitude and duration. Different colors are selected for printing during the different segments by varying the fraction of subintervals that contain pulses. This technique allows multiple colors to be printed using a thermal print head with a single strobe signal line. Pulsing patterns may be chosen to reduce the coincidence of pulses provided to multiple print head elements, thereby reducing the peak power requirements of the print head.

Abstract: In one aspect of the invention there is disclosed a multicolor thermal imaging system wherein different heating elements on a thermal print head can print on different color-forming layers of a multicolor thermal imaging member in a single pass. The line-printing time is divided into segments, each of which is divided into a plurality of subintervals. All of the pulses within the segments have the same energy. In one embodiment, every pulse has the same amplitude and duration. Different colors are selected for printing during the different segments by varying the fraction of subintervals that contain pulses. This technique allows multiple colors to be printed using a thermal print head with a single strobe signal line. Pulsing patterns may be chosen to reduce the coincidence of pulses provided to multiple print head elements, thereby reducing the peak power requirements of the print head.