Abstract: A communication device for handling a hybrid automatic repeat request (HARQ) transmission, comprises at least one storage device; and at least one processing circuit, coupled to the at least one storage device, wherein the at least one storage device stores instructions, and the at least one processing circuit is configured to execute the instructions of: receiving a configuration from a network, wherein the configuration comprises a time domain resource allocation (TDRA) table and a set of a plurality of timing values; and receiving a downlink (DL) control information (DCI) from the network, wherein the DCI indicates a row of the TDRA table for at least one physical DL shared channel (PDSCH) reception and indicates a timing value of the set of the plurality of timing values for the HARQ transmission corresponding to the at least one PDSCH reception.

Abstract: A communication device for handling physical uplink (UL) shared channel (PUSCH) transmissions, comprises at least one storage device; and at least one processing circuit, coupled to the at least one storage device, wherein the at least one storage device stores instructions, and the at least one processing circuit is configured to execute the instructions of receiving an indicator indicating a plurality of physical uplink (UL) shared channel (PUSCH) repetitions from a network; determining at least one nominal transmission duration for the plurality of PUSCH repetitions; and transmitting the plurality of PUSCH repetitions to the network in the at least one nominal transmission duration according to the indication.

Abstract: A control method to operate a memory device, a control method to operate a memory system and a control system are provided. The control method includes providing a first voltage to a memory device for accessing a memory element of the memory device; obtaining an aging information of the memory device; and providing a second voltage to the memory device according to the aging information, wherein the first voltage and the second voltage are reverse biased voltages.

Abstract: An operation method for a memory device is provided. The memory device includes a two-terminal selector and a resistance variable storage element coupled to the two-terminal selector. The method includes providing a voltage pulse to the memory device. A voltage applied across the two-terminal selector during a falling part of the voltage pulse falls below a holding voltage of the two-terminal selector. A voltage falling rate of the falling part at which the voltage applied across the two-terminal selector reaches the holding voltage is raised for reducing threshold voltage drift of the two-terminal selector.

Abstract: An ovonic threshold switch (OTS) selector and a memory device including the OTS selector is provided. The OTS selector includes a switching layer formed of a GeCTe compound further doped with one or both of nitrogen and silicon, and exhibits improved thermal stability and electrical performance.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: A method for determining at least one random access channel (RACH) burst used by a user equipment (UE) including: determining a reference resource location by receiving a data service; and determining the resource location of the at least one random access channel burst according to the reference resource location and an offset.

Abstract: A communication device for handling a hybrid automatic repeat request (HARQ) transmission comprises a storage unit for storing instructions and a processing circuit coupled to the storage unit. The processing circuit is configured to execute the instructions stored in the storage unit. The instructions comprise performing a first downlink (DL) reception in a first subframe from a serving cell; and transmitting a first HARQ feedback in response to the first DL reception in a second subframe to the serving cell, wherein the second subframe is determined according to the first subframe and a sum of a predetermined timing and a first HARQ timing.

Abstract: A device for handling channel access procedure includes a storage device and a processing circuit coupled to the storage device and configured to execute instructions stored in the storage device. The storage device is configured for storing the instructions of receiving an indication for an uplink transmission; determining at least one parameter of the device for a listen-before-talk procedure according to a capability of the device or a signaling from a base station; and performing the uplink transmission according to the indication.

Abstract: A device for handling channel access procedure includes a storage device and a processing circuit coupled to the storage device and configured to execute instructions stored in the storage device. The storage device is configured for storing the instructions of receiving an indication for an uplink transmission; determining at least one parameter of the device for a listen-before-talk procedure according to a capability of the device or a signaling from a base station; and performing the uplink transmission according to the indication.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: A memory device is provided. The memory device includes a substrate, a spin-orbit torque layer and a magnetic tunneling junction (MTJ). The MTJ stacks with the spin-orbit torque layer over the substrate and includes a synthetic free layer, a barrier layer and a reference layer. The synthetic free layer includes a synthetic antiferromagnetic structure, a first spacer layer and a free layer, wherein the synthetic antiferromagnetic structure is disposed between the spin-orbit torque layer and the free layer. The barrier layer is disposed beside the synthetic free layer. The reference layer is disposed beside the barrier layer.

Abstract: A memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material.

Abstract: A user equipment (UE) interacts with a base station (BS) to activate a power saving mode based on a triggering condition. The UE receives reference signals (RSs) from a first RS-set of quasi-colocated (QCLd) RSs, derives a measurement result by measuring the RSs, and uses the first measurement result (and in some cases measurements results for other RS set) for evaluation of the triggering condition to identify whether the triggering condition is satisfied. The UE and the BS switch from the first RS-set to a second RS-set once the triggering condition is satisfied.

Abstract: A user equipment (UE) receives physical downlink shared channel (PDSCH) in a downlink slot as scheduled using a downlink control indicator (DCI). The UE identifies that the downlink slot is part of a group of downlink slots based on the DCI and/or another DCI corresponding to the group. The UE identifies one or more uplink slots at which to transmit hybrid automatic repeat request (HARQ) feedback corresponding to the slots in the group, and transmits the HARQ feedback at one of these uplink slots. If HARQ feedback is not received, a semi-static codebook may prevent HARQ payload size misalignment.

Abstract: A communication device for handling a physical downlink (DL) control channel (PDCCH) reception comprises at least one storage device; and at least one processing circuit, coupled to the at least one storage device. The at least one storage device stores instructions, and the at least one processing circuit is configured to execute the instructions of changing from a first active bandwidth part (BWP) of a serving cell of a network to a second active BWP of the serving cell according to at least one first indicator; and determining whether to detect a PDCCH according to at least one search space (SS) set for the serving cell, after changing to the second active BWP.

Abstract: Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

Abstract: A communication device for handling detection of a physical downlink (DL) control channel (PDCCH), comprises at least one storage device; and at least one processing circuit, coupled to the at least one storage device. The at least one storage device stores instructions, and the at least one processing circuit is configured to execute the instructions of detecting a PDCCH for a first serving cell of a network according to at least one first search space (SS) set with a first group index; receiving at least one indicator in a DL control information (DCI) from the network; and detecting the PDCCH for the first serving cell of the network according to the at least one indicator, after receiving the DCI, according to one of the proposed instructions.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A device for handling channel access procedure includes a storage device and a processing circuit coupled to the storage device and configured to execute instructions stored in the storage device. The storage device is configured for storing the instructions of receiving an indication for an uplink transmission; determining at least one parameter of the device for a listen-before-talk procedure according to a capability of the device or a signaling from a base station; and performing the uplink transmission according to the indication.