Abstract: A method for growing epitaxy is disclosed, which includes providing a mold; providing a substrate which is disposed in the mold; providing a solvent and a solute, and liquefying the solvent to allow the solute melted therein so as to form a melting solution between the substrate and the mold; and forming a first epitaxial layer on the substrate, wherein the first epitaxy is formed on the substrate by a temperature gradient of the melting solution melting the mold and the substrate.

Abstract: Graphene layers, hexagonal boron nitride layers, as well as other materials made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphene layer is provided. Such a method may include mixing a carbon source with a horizontally oriented molten solvent, precipitating the carbon source from the molten solvent to form a graphite layer across the molten solvent, and separating the graphite layer into a plurality of graphene layers.

Abstract: Polycrystalline grits and methods of making grits which allow for self-sharpening are provided. In one aspect, for example, a method of sharpening a superabrasive cutting element during cutting can include abrading a self-sharpening superabrasive particle against a work piece to facilitate dulling of a cutting surface of the superabrasive particle, wherein the superabrasive particle includes a superabrasive material and a catalyst material, the catalyst material being located within inclusions in the superabrasive particle. The method can further include interacting the catalyst material and the superabrasive material to cause microfracturing of the superabrasive particle to expose a new cutting surface.

Abstract: A cutting device comprises a plurality of individual polycrystalline cutting elements secured in a solidified organic material layer. Each of the plurality of individual polycrystalline cutting elements has a substantially matching geometric configuration.

Abstract: A method of forming a composite polycrystalline aluminum containing grit can include forming a dispersion of alumina and gelling the dispersion of alumina to form a gel. A nitride abrasive particle can be added to either the dispersion of alumina or the gel. After the nitride abrasive particle has been added, the gel can be processed to form a composite polycrystalline alumina nitride grit.

Abstract: Superabrasive tools and their methods of manufacture are disclosed. In one aspect, a method of improving retention of superabrasive particles held in a solidified organic material layer of an abrading tool, a portion of each of said superabrasive particles protruding out of the solidified organic material layer is provided. The method may include securing a plurality of superabrasive particles in the solidified organic material layer in an arrangement that minimizes mechanical stress impinging on the protruding portion of any individual superabrasive particle when used to abrade a work piece. As an example, the arrangement of the plurality of superabrasive particles may be configured to uniformly distribute frictional forces across substantially each superabrasive particle.

Abstract: Semiconductor devices and methods for making such devices are provided. One such method may include forming an epitaxial layer of single crystal SiC on a single crystal Si growth substrate, forming an epitaxial diamond layer on the layer of SiC, forming a Si layer on the diamond layer, bonding a SiO2 surface of a Si carrier substrate to the Si layer, and removing the Si growth substrate to expose the SiC layer. In yet another aspect, a semiconductor layer may be deposited onto the SiC layer. The semiconductor layer may further be deposited epitaxially.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

Abstract: The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a diamond body, including providing a non-particulate silicon carbide (SiC) mass having a pre-designed shape, placing the SiC mass under high pressure in association with a molten catalyst and a carbon source, and maintaining the SiC mass under high pressure to form a substantially monocrystalline diamond body. The diamond body may be formed across substantially all of the SiC mass having surface area exposed to the molten catalyst. As such, the diamond body may conform to the shape of the exposed surface area of the SiC mass.

Abstract: Diamond-like carbon based devices and methods of making and using the same which have improved electron emission and increased reliability. The device can include an anode with a layer of diamond-like carbon material such as amorphous diamond coated over at least a portion of the anode and a cathode. An intermediate member can be electrically coupled between the diamond-like carbon material and the cathode. Various additional layers and configurations can allow for improved performance such as multiple cathode layers and/or multiple intermediate layers. The presence of diamond-like carbon on the anode provides significantly improved electron emission with or without diamond-like carbon on the cathode. The devices can be configured as thermoelectric conversion devices such as an electrical generator or a cooling device, light emitting devices, or other electronic devices and can be conveniently formed.

Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, thermoelectric conversion devices and other electronic devices are provided. In one aspect, for example, an electronic device is provided. Such a device may include a charge carrier separation layer further including a layer of a P-type material comprising copper, gallium, indium and at least one member selected from the group consisting of selenide and sulfide, and a layer of an N-type material adjacent to the P-type material, where the N-type material includes diamond-like carbon doped with an N dopant. The electronic device may further include a first electrode adjacent to the layer of P-type material of the charge carrier separation layer opposite to the N-type material.

Abstract: A method of growing a diamond mass in a liquid growth medium. The liquid growth medium can include a carbon source, a diamond growth catalyst such as a diamond catalyst metal-rare earth element alloy or nanocatalyst, and a dissociated hydrogen of a hydrogen source. The carbon source provides carbon atoms for growing diamond and can include a diamond seed material for diamond growth. The molten liquid phase provides a diamond growth catalyst which allows the carbon to form diamond at the temperature and low pressure conditions discussed. Furthermore, the dissociated hydrogen acts as a concentrator for assembling carbon atoms at a relatively high concentration which mimicks, in some respects, diamond growth under more conventional high pressure processes without the high pressure.

Abstract: An improved method for controlling nucleation sites during superabrasive particle synthesis can provide high quality industrial superabrasive particles with high yield and a narrow size distribution. The synthesis method can include forming a particulate crystal growth layer by mixing a raw material and a catalyst material and then placing the crystalline seeds in a predetermined pattern in the growth layer. Preferably, seeds can be substantially surrounded by catalyst material. The growth precursor can be maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. The crystalline seeds can be placed in a predetermined pattern using a template, a transfer sheet, vacuum chuck or similar techniques. The superabrasive particles grown using the described methods typically have a high yield of high quality industrial particles and a narrow distribution of particle sizes.

Abstract: A method of creating pores in a CMP pad in-situ includes impregnating a first material with a second material to form a CMP pad. The second material can have a resistance to frictional erosion that is less than that of the first material. The CMP pad thus has two materials with differing frictional erosion resistances. The working surface of the CMP pad can be contacted to a wafer to be polished wherein the second material can be frictionally eroded during polishing.

Abstract: Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is substantially oriented by the Si substrate, depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice, and disposing a layer of diamond onto the semiconductor layer. The base layer may include numerous materials, including, without limitation, aluminum phosphide (Alp), boron arsenide (BAs), gallium nitride (GaN), indium nitride (InN), and combinations thereof. Additionally, the method may further include removing the lattice-orienting Si substrate and the base layer from the semiconductor layer. In one aspect, the Si substrate may be of a single crystal orientation.

Abstract: CMP pad dressers with superabrasive particles oriented into an attitude that controls CMP pad performance, and methods associated therewith are disclosed and described. The controlled CMP pad performance may be selected to optimize CMP pad dressing rate and dresser wear.

Abstract: Methods for extending the service life of a CMP pad dresser having a substrate and a plurality of superabrasive particles disposed thereon which is used to dress a CMP pad are disclosed and described. The method may include dressing the chemical mechanical polishing pad with the dresser; determining superabrasive particle wear by measuring a mechanical property of the pad, dresser, or combination thereof; and responding to the mechanical property measurement by varying pressure and RPM between the pad and the dresser in relation to the superabrasive particle wear in order to extend dresser life.

Abstract: Methods of making a superabrasive tool precursor are disclosed, along with such precursors and associated tools. Particularly, methods are disclosed for orienting superabrasive particles in a viscous binding material in order to provide tools based thereupon and having desired performance characteristics.

Abstract: Methods for making polishing tools and associated tools are disclosed. In one aspect, a method of making a polishing tool is provided. Such a method may include truing a working surface of a nano-diamond impregnated substrate. The method may further include forming asperities on the working surface with a polycrystalline diamond dresser, where the asperities have a height to distance ratio of from about 1:5 to about 5:1 and where the average asperity diameter is less than about 175 ?m.