Abstract: A cutting device comprises a base having a solidified organic material layer disposed thereon. A plurality of individual polycrystalline cutting elements are secured in the solidified organic material layer. Each of the plurality of individual polycrystalline cutting elements has a substantially matching geometric configuration.

Abstract: Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: Superabrasive tools and their methods of manufacture are disclosed. In one aspect, a method of improving retention of superabrasive particles held in a solidified organic material layer of an abrading tool, a portion of each of said superabrasive particles protruding out of the solidified organic material layer is provided. The method may include securing a plurality of superabrasive particles in the solidified organic material layer in an arrangement that minimizes mechanical stress impinging on the protruding portion of any individual superabrasive particle when used to abrade a work piece. As an example, the arrangement of the plurality of superabrasive particles may be configured to uniformly distribute frictional forces across substantially each superabrasive particle.

Abstract: Semiconductor devices and methods for making such devices are provided. One such method may include forming an epitaxial layer of single crystal SiC on a single crystal Si growth substrate, forming an epitaxial diamond layer on the layer of SiC, forming a Si layer on the diamond layer, bonding a SiO2 surface of a Si carrier substrate to the Si layer, and removing the Si growth substrate to expose the SiC layer. In yet another aspect, a semiconductor layer may be deposited onto the SiC layer. The semiconductor layer may further be deposited epitaxially.

Abstract: Superabrasive tools having improved caustic resistance and their methods of manufacture are disclosed. One aspect may include a method of providing caustic resistance along an entire working surface of a superabrasive tool having embedded superabrasive particles. Such a method may include forming a protective layer through reaction between a reactive source and a reactive element in situ along substantially all of the working surface at an interface between the reactive source and a support matrix including the reactive element, and between each of a plurality of superabrasive particles and the support matrix. At least a portion of the reactive source may then be removed to expose the protective layer. In some aspects, the protective layer may be substantially continuous.

Abstract: Methods for orienting superabrasive particles in a superabrasive tool are provided. In one aspect, for example, a method for orienting superabrasive particles in a tool is provided. Such a method can include providing a plurality of superabrasive particles having a preselected average size, preselecting a thickness for an amorphous braze layer to be applied to a substrate, wherein the thickness is based on the average size of the plurality of superabrasive particles, and applying an amorphous braze layer to the substrate at the preselected thickness.

Abstract: A cutting device comprises a base having a solidified organic material layer disposed thereon. A plurality of individual polycrystalline cutting elements are secured in the solidified organic material layer. Each of the plurality of individual polycrystalline cutting elements has a substantially matching geometric configuration.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single cyrstal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: The present invention discloses methods and systems for increasing polishing performance of a CMP process. In one aspect, for example, a method of increasing polishing performance of a CMP process includes vibrating a contact interface between a CMP pad and a wafer during a CMP process, such that oscillations between the CMP pad and the wafer occurs in a direction substantially parallel to a working surface of the CMP pad. In one specific aspect, vibrating the contact interface includes vibrating the contact interface in a direction substantially parallel to the contact interface. The vibrating can include vibrating the CMP pad, vibrating the wafer, or vibrating the CMP pad and the wafer. Such vibrations can allow the contact pressure at the contact interface to be decreased as compared to a contact interface that is not vibrated to minimize damage to the CMP pad or the wafer.

Abstract: Methods for extending the service life of a CMP pad dresser having a substrate and a plurality of superabrasive particles disposed thereon which is used to dress a CMP pad are disclosed and described. The method may include dressing the chemical mechanical polishing pad with the dresser; determining superabrasive particle wear by measuring a mechanical property of the pad, dresser, or combination thereof; and responding to the mechanical property measurement by varying pressure and RPM between the pad and the dresser in relation to the superabrasive particle wear in order to extend dresser life.

Abstract: A method for growing diamonds under high pressure high temperature (HPHT) is provided. In one aspect, such a method can include providing a growth precursor including a carbon source and a catalyst material, the growth precursor having a diamond precursor particle arranged at least partially therein, melting the diamond precursor particle, and growing a diamond particle by subjecting the melted diamond precursor particle and the growth precursor to temperature and pressure conditions sufficient for diamond growth. In some aspects, the resulting diamond particle can be utilized as a diamond precursor particle in a subsequent reaction to grow an even larger diamond particle.

Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer can be coupled adjacent and between the diamond-like carbon cathode and an anode. The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.

Abstract: Diamond-like carbon field emission surfaces, including associated devices and methods for using such devices are disclosed. In one aspect, for example, a field emission surface is provided, including a smooth layer of diamond-like carbon disposed on a smooth substrate, the diamond-like carbon layer having a uniformly distributed ablation pattern configured to emit electrons. The diamond-like carbon layer should be smooth in order to allow the uniform distribution of the ablation pattern.

Abstract: The present invention provides materials, devices, and methods for generation of electricity from solar power. In one aspect, the present invention includes a solar cell, including a first conductor, a doped silicon layer in electrical communication with the first conductor, a nanodiamond layer in contact with the doped silicon layer, a doped amorphous diamond layer in contact with the nanodiamond layer, and a second conductor in electrical communication with the doped amorphous diamond layer.

Abstract: Superabrasive tools and their methods of manufacture are disclosed. In one aspect, a method of improving retention of superabrasive particles held in a solidified organic material layer of an abrading tool, a portion of each of said superabrasive particles protruding out of the solidified organic material layer is provided. The method may include securing a plurality of superabrasive particles in the solidified organic material layer in an arrangement that minimizes mechanical stress impinging on the protruding portion of any individual superabrasive particle when used to abrade a work piece. As an example, the arrangement of the plurality of superabrasive particles may be configured to uniformly distribute frictional forces across substantially each superabrasive particle.

Abstract: Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 ?-cm; consequently.

Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

Abstract: Superabrasive tools and their methods of manufacture are disclosed. In one aspect, a method of improving retention of superabrasive particles held in a solidified organic material layer of an abrading tool, a portion of each of said superabrasive particles protruding out of the solidified organic material layer is provided. The method may include securing a plurality of superabrasive particles in the solidified organic material layer in an arrangement that minimizes mechanical stress impinging on the protruding portion of any individual superabrasive particle when used to abrade a work piece. As an example, the arrangement of the plurality of superabrasive particles may be configured to uniformly distribute frictional forces across substantially each superabrasive particle.

Abstract: A multiple anvil press can be configured for gem-quality growth. The press can include a plurality of opposing anvils, where the anvils are configured for simultaneous movement within a tolerance of less than about 0.5 mm as measured at each anvil surface, and each anvil can be aligned to a common center of all the anvils where the alignment is tuned to a tolerance of less than about 0.1 mm during use. The press can also include a reaction volume formed by the enclosure of all anvils, where the reaction volume has a size configured to facilitate single crystal growth per cycle time.