Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

Abstract: Superabrasive tools and their methods of manufacture are disclosed. In one aspect, a method of improving retention of superabrasive particles held in a solidified organic material layer of an abrading tool, a portion of each of said superabrasive particles protruding out of the solidified organic material layer is provided. The method may include securing a plurality of superabrasive particles in the solidified organic material layer in an arrangement that minimizes mechanical stress impinging on the protruding portion of any individual superabrasive particle when used to abrade a work piece. As an example, the arrangement of the plurality of superabrasive particles may be configured to uniformly distribute frictional forces across substantially each superabrasive particle.

Abstract: Semiconductor substrates and devices having improved performance and cooling, as well as associated methods, are provided. In one aspect, for example, a semiconductor device can include a matrix layer and a plurality of single crystal semiconductor tiles disposed in the matrix layer. The plurality of semiconductor tiles are positioned such that an exposed surface of each of substantially all of the plurality of diamond tiles aligns along a common plane to form a substrate surface. In one aspect, a semiconductor layer is disposed on the substrate surface. In another aspect, the semiconductor layer is a doped diamond layer. In yet another aspect, the semiconductor tiles are doped. In a further aspect, the exposed surface of each of the plurality of semiconductor tiles has a common crystallographic orientation.

Abstract: A highly thermal conductive circuit board includes a composite substrate, and a metal layer, an insulating layer, and a conductor layer sequentially disposed on the composite substrate. When at least one electronic element is electrically disposed on the conductor layer of the highly thermal conductive circuit board, heat produced by the electronic element in operation is rapidly dissipated through characteristics such as a high thermal conductivity and a low thermal expansion coefficient of the highly thermal conductive circuit board.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: Methods for extending the service life of a CMP pad dresser having a substrate and a plurality of superabrasive particles disposed thereon which is used to dress a CMP pad are disclosed and described. The method may include dressing the chemical mechanical polishing pad with the dresser; determining superabrasive particle wear by measuring a mechanical property of the pad, dresser, or combination thereof; and responding to the mechanical property measurement by varying pressure and RPM between the pad and the dresser in relation to the superabrasive particle wear in order to extend dresser life.

Abstract: The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.

Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer can be coupled adjacent and between the diamond-like carbon cathode and an anode. The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.

Abstract: Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing a semiconductor layer on the buffer layer. In one specific aspect, the c-axis of the buffer layer is oriented perpendicular to the working surface of the diamond layer.

Abstract: Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD device is provided that includes etching depressions into an etch surface of a semiconductor substrate to a uniform depth, depositing a diamond layer onto the etch surface to form diamond-filled depressions, and thinning the semiconductor substrate at a thinning surface opposite the etch surface until the diamond filled depressions are exposed, thus forming a semiconductor device having a thickness substantially equal to the uniform depth.

Abstract: Methods and systems for removing dirt and/or debris from a CMP pad surface during CMP pad processing are provided. In one aspect, a method for removing debris from a CMP pad surface during CMP processing can include rotating a CMP pad having a polishing surface, and pressing a CMP pad dresser into the polishing surface of the CMP pad, the CMP pad dresser having a plurality of superabrasive particles coupled thereto and oriented toward the CMP pad. The method can further include spraying a jet of liquid onto the polishing surface of the CMP pad with sufficient force to dislodge debris from the polishing surface of the CMP pad.

Abstract: LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: A method of making a multi-faceted diamond is provided. Such a method can include obtaining a diamond having a substantially euhedral morphology and a plurality of primary crystallographic faces and polishing a plurality of primary apexes defined by the primary crystallographic faces to form a plurality of secondary faces and secondary apexes.

Abstract: A method for exercising cells within a body is provided, including selecting a portion of the body to receive cellular exercise, enclosing the portion of the body with a covering to form an essentially watertight space in contact with the portion of the body, introducing into the watertight space a liquid, such that the liquid is in contact with the portion of the body, and introducing sound waves into the liquid. Various embodiments of the present invention include pressurizing the essentially watertight space.

Abstract: Superabrasive tools and associated methods of making and using are provided. In one aspect, for example, a superabrasive tool having improved superabrasive particle retention is provided. Such a tool can include a matrix layer and a plurality of superabrasive particles held in and protruding from the matrix layer, whereby surfaces of the plurality of superabrasive particles contacting the matrix layer have been roughened to have an RA of greater than about 1 micron, and wherein the roughened surfaces improve the retention of the plurality of superabrasive particles in the matrix layer.

Abstract: The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.

Abstract: The present invention provides CMP pad dressers and methods for dressing or conditioning CMP pads. In one aspect, a method for conditioning a CMP pad can include cutting the CMP pad with superabrasive cutting elements and controlling a degree of contact between the CMP pad and the cutting elements using control elements. The degree of contact is established through placement of the control elements relative to the cutting elements.

Abstract: Semiconductor-on-diamond devices and methods for making such devices are provided. In one aspect, for example, a method for making a semiconductor-on-diamond substrate is provided, including depositing a conformal amorphous diamond layer on a single crystal Si base layer, thereby forming in situ a single crystal SiC layer therebetween, removing the amorphous diamond layer to expose the SiC layer, and epitaxially depositing a single crystal diamond layer on the SiC layer.

Abstract: LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.