Abstract: Semiconductor-on-diamond devices and methods for making such devices are provided. One such method may include depositing a semiconductor layer on a semiconductor substrate, depositing an adynamic diamond layer on the semiconductor layer opposite the semiconductor substrate, and coupling a support substrate to the adynamic diamond layer opposite the semiconductor layer to support the adynamic layer.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

Abstract: Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer, and coupling a diamond substrate to at least one of the plurality of semiconductor layers such that the diamond support is oriented parallel to the transparent diamond layer. In one aspect such a method may further include electrically coupling at least one of a p-type electrode or an n-type electrode to at least one of the plurality of semiconductor layers.

Abstract: The present invention discloses a CMP device and methods that are capable of improving CMP processing through incorporation of vibration sources which produce vibrations in a direction substantially parallel to the working surface of the CMP pad. The CMP device includes a CMP pad dresser. Such a method can include steps of vibrating a CMP pad, CMP pad dresser, or wafer in a direction substantially parallel to a working surface of the CMP pad and engaging the CMP pad dresser with a working surface of a CMP pad The results of vibrating the superabrasive particles can provide benefits to both the CMP pad and dresser, according to several aspects disclosed herein.

Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer can be coupled adjacent and between the diamond-like carbon cathode and an anode. The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.

Abstract: Graphene layers and associated methods are disclosed. In one aspect, for example, a method of making graphene on a diamond substrate is provided. Such a method can include applying a layer of a metal to a crystallographic face of the diamond substrate, and heating the diamond substrate under vacuum to convert a portion of the diamond substrate at the crystallographic face into graphene. In another aspect, the layer of metal is applied only on diamond substrate faces having a same crystallographic orientation. In yet another aspect, the layer of metal is applied to only a single crystallographic face of the diamond substrate. Additionally, in one aspect, converting the portion of the diamond substrate at the crystallographic face into graphene includes converting the portion of the diamond substrate by a martensitic transformation.

Abstract: A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders.

Abstract: Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is substantially oriented by the Si substrate, depositing a semiconductor layer onto the base layer such that the semiconductor layer lattice is substantially oriented with respect to the base layer lattice, and disposing a layer of diamond onto the semiconductor layer. The base layer may include numerous materials, including, without limitation, aluminum phosphide (AlP), boron arsenide (BAs), gallium nitride (GaN), indium nitride (InN), and combinations thereof. Additionally, the method may further include removing the lattice-orienting Si substrate and the base layer from the semiconductor layer. In one aspect, the Si substrate may be of a single crystal orientation.

Abstract: Diamond-like carbon (DLC) coated devices and associated methods are provided. In one aspect, for example, a DLC-coated substrate can include a substrate, and a H-doped DLC layer disposed on the substrate, where the DLC layer is doped with a Si material at least along an interface between the substrate and the DLC layer. Additionally, the substrate can include a surface doped layer on the DLC layer opposite the substrate.

Abstract: Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing a semiconductor layer on the buffer layer. In one specific aspect, the c-axis of the buffer layer is oriented perpendicular to the working surface of the diamond layer.

Abstract: A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.

Abstract: The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.

Abstract: CMP pad dressers with superabrasive particles oriented into an attitude that controls CMP pad performance, and methods associated therewith are disclosed and described. The controlled CMP pad performance may be selected to optimize CMP pad dressing rate and dresser wear.

Abstract: A compositionally graded material having low defect densities and improved electronic properties is disclosed and described. A compositionally graded inorganic crystalline material can be formed by preparing a crystalline substrate by forming crystallographically oriented pits across an exposed surface of the substrate. A transition region can be deposited on the substrate under substantially epitaxial growth conditions. Single crystal substrates of a wide variety of materials such as diamond, aluminum nitride, silicon carbide, etc. can be formed having relatively low defect rates.

Abstract: The present invention discloses a CMP device and methods that are capable of improving CMP processing through incorporation of vibration sources which produce vibrations in a direction substantially parallel to the working surface of the CMP pad. The CMP device includes a CMP pad dresser. Such a method can include steps of vibrating a CMP pad, CMP pad dresser, or wafer in a direction substantially parallel to a working surface of the CMP pad and engaging the CMP pad dresser with a working surface of a CMP pad The results of vibrating the superabrasive particles can provide benefits to both the CMP pad and dresser, according to several aspects disclosed herein.

Abstract: Methods and devices for cooling electronic circuits having at least one heat source are disclosed and described. One such thermally dynamic electronic device may include a layer of diamond material coated on a support substrate, and circuitry disposed on the layer of diamond material, the diamond material being configured to accelerate movement of heat away from the circuitry. Although the diamond material may be any known diamond material that functions to accelerate heat transfer, in one aspect the diamond material may be diamond-like carbon. In one specific aspect, the diamond-like carbon may be amorphous carbon. In another aspect, the diamond material may be crystalline diamond.

Abstract: A graphene transparent electrode, which comprises: at least one graphene sheet; wherein the graphene sheets electrically connect with each other by overlapping with each other, each of the graphene sheets has a diameter from 10 ?m to 1 mm, the quantity of the graphene sheets in the graphene transparent electrode is from 1 to 1000, the electrical resistance of the graphene transparent electrode is 1 ?/cm or below, and the light transmittance of the graphene transparent electrode is 70% or above. A graphene light emitting diode (gLED) and a method of fabricating the same are also disclosed.

Abstract: The present invention relates to an Li-ion battery, which comprises: a positive electrode; a negative electrode; and an Li-ion electrolyte contacting with the positive electrode and the negative electrode, wherein the negative electrode has a graphene multi-layered structure, the graphene multi-layered structure comprises plural 2D graphene layers, and plural Ni layers interposed between the 2D graphene layers, and Li-ions completely intercalate or de-intercalate between the graphene layers.

Abstract: Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer, and coupling a diamond substrate to at least one of the plurality of semiconductor layers such that the diamond support is oriented parallel to the transparent diamond layer. In one aspect such a method may further include electrically coupling at least one of a p-type electrode or an n-type electrode to at least one of the plurality of semiconductor layers.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.